VRSM IF(AV)M IF(RMS) IFSM VF0 rF = = = = = = 5000 3810 5990 45×103 0.903 0.136 Rectifier Diode V A A A V mΩ 5SDD 38H5000 Doc. No. 5SYA1177-00 Feb. 06 • Optimum power handling capability • Very low on-state losses Blocking Maximum rated values Note 1 Parameter Symbol Conditions Value Unit Repetitive peak reverse voltage VRRM f = 50 Hz, tp = 10ms, Tj = -40...160°C 5000 V Non-repetitive peak reverse voltage VRSM f = 50 Hz, tp = 10ms, Tj = -40...160°C 5000 V Characteristic values Parameter Symbol Conditions Max. (reverse) leakage current IRRM min typ VRRM, Tj = 160°C max 110 Unit mA Derating factor of 0.13% per °C is applicable for Tj below 0 °C. Mechanical data Maximum rated values Note 1 Parameter Symbol Conditions Mounting force FM Acceleration a Acceleration a min 45 typ 50 max Unit 55 kN Device unclamped 50 m/s 2 Device clamped 100 m/s 2 Characteristic values Parameter Symbol Conditions min typ max Weight m Housing thickness H Surface creepage distance DS 40 mm Air strike distance Da 20 mm 0.9 FM = 50 kN, Ta = 25 °C 25.5 Note 1 Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Unit kg 26.5 mm 5SDD 38H5000 On-state Maximum rated values Note 1 Parameter Symbol Conditions Max. average on-state current IF(AV)M Max. RMS on-state current IF(RMS) Max. peak non-repetitive surge current IFSM Limiting load integral I2t Max. peak non-repetitive surge current IFSM Limiting load integral I2t min typ 50 Hz, Half sine wave, TC = 85 °C tp = 10 ms, Tj = 160°C, VR = 0 V max Unit 3810 A 5990 A 3 A 6 A2s 3 A 10.1×10 6 A2s max Unit 45×10 9.6×10 tp = 8.3 ms, Tj = 160°C, VR = 0 V 48×10 Characteristic values Parameter Symbol Conditions min typ On-state voltage VF IF = 4000 A, Tj = 160°C 1.43 V Threshold voltage V(T0) 0.903 V Slope resistance rT Tj = 160°C IT = 6000...18000 A 0.136 mΩ max Unit Switching Characteristic values Parameter Symbol Conditions Recovery charge Qrr diF/dt = -30 A/µs, VR = 100 V IFRM = 2000 A, Tj = 160°C min typ 9000 µAs ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1177-00 Feb. 06 page 2 of 6 5SDD 38H5000 Thermal Maximum rated values Note 1 Parameter Symbol Conditions min max Unit Operating junction temperature range Tvj -40 160 °C -40 160 °C max Unit Double-side cooled Fm = 45...55 kN 8 K/kW Rth(j-c)A Anode-side cooled Fm = 45...55 kN 14.5 K/kW Rth(j-c)C Cathode-side cooled Fm = 45...55 kN 18.0 K/kW Double-side cooled Fm = 45...55 kN 2.5 K/kW Single-side cooled Fm = 45...55 kN 5.0 K/kW Storage temperature range Tstg typ Characteristic values Symbol Conditions Thermal resistance junction Rth(j-c) to case Thermal resistance case to Rth(c-h) heatsink Rth(c-h) min Analytical function for transient thermal impedance: n Zth(j-c) (t) = ∑ R th i (1 - e - t/τ i ) i =1 i 1 2 3 4 Rth i(K/kW) 4.533 2.255 0.868 0.345 τi(s) 0.4406 0.1045 0.0092 typ 9 0.0022 Transient therm al im pedance junction to case Zthjc ( K/kW ) Parameter 8 7 6 5 4 3 2 1 0 0,001 0,01 0,1 1 10 Square w ave pulse duration t d ( s ) Fig. 1 Transient thermal impedance junction-to-case ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1177-00 Feb. 06 page 3 of 6 5SDD 38H5000 IF ( A ) 20000 18000 T j = 25 °C 16000 160 °C 14000 12000 10000 8000 6000 4000 2000 0 0 1 2 3 VF (V) 4 Fig. 2 Max. on-state characteristics 90 ∫ i2dt 80 IFSM ( kA ) IFSM ( kA ) 20 i 2dt (106 A2s) 50 100 40 15 70 30 60 VR = 0 V 10 20 50 40 V R ≤ 0.5 V RRM 5 10 I FSM 30 20 1 10 t ( ms ) 0 100 Fig. 3 Surge forward current vs. pulse length, half sine wave, single pulse, VR = 0 V 0 1 10 100 Number n of cycles at 50 Hz Fig. 4 Surge forward current vs. number of pulses, half sine wave, VR = 0 V ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1177-00 Feb. 06 page 4 of 6 PT ( W ) 5SDD 38H5000 PT ( W ) 10000 10000 ψ = 60° 120° 180° 9000 8000 DC 7000 ψ = 30° 270° 7000 DC 6000 5000 5000 4000 4000 3000 3000 2000 2000 1000 1000 0 0 1000 2000 3000 0 4000 5000 I FAV ( A ) Fig. 5 Forward power loss vs. average forward current, sine waveform, f = 50 Hz 1000 2000 3000 4000 5000 I FAV ( A ) Fig. 6 Forward power loss vs. average forward current, square waveform, f = 50 Hz 160 TC ( °C ) TC ( °C ) 180° 8000 6000 0 60° 90° 120° 9000 160 140 140 120 120 100 100 DC DC 80 270° 80 ψ = 60° 60 0 1000 2000 120° ψ = 30° 180° 60 3000 4000 5000 0 1000 60° 2000 90° 120° 3000 4000 5000 I FAV ( A ) I FAV ( A ) Fig. 7 Max. case temperature vs aver. forward current, sine waveform, f = 50 Hz 180° Fig. 8 Max. case temperature vs aver. forward current, square waveform, f = 50 Hz ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1177-00 Feb. 06 page 5 of 6 5SDD 38H5000 Fig. 9 Outline drawing; all dimensions are in millimeters and represent nominal values unless stated otherwise Related documents: 5SYA 2020 Design of RC-Snubbers for Phase Control Applications 5SYA 2029 Designing Large Rectifiers with High Power Diodes 5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1177-00 Feb. 06