VSM IT(AV)M IT(RMS) ITSM VT0 rT = 6500 V = 1405 A = 2205 A = 22×103 A = 1.2 V = 0.6 mΩ Bi-Directional Control Thyristor 5STB 13N6500 Doc. No. 5SYA1035-03 May 06 • Two thyristors integrated into one wafer • Patented free-floating silicon technology • Designed for energy management and industrial applications • Optimum power handling capability • Interdigitated amplifying gate. The electrical and thermal data are valid for one-thyristor-half of the device (unless otherwise stated) Blocking Maximum rated values Note 1 Symbol Conditions Parameter Max. surge peak blocking voltage VSM 1) Max. repetitive peak reverse blocking voltage VRM 1) Critical rate of rise of commutating voltage dv/dtcrit min typ max Unit f = 5 Hz, tp = 10 ms 6500 V f = 50 Hz, tp = 10 ms 5600 V Exp. to 3750 V, Tvj = 125°C 2000 V/µs Characteristic values Parameter Symbol Conditions Max. leakage current IRM min typ VRM, Tvj = 125 °C max 400 Unit mA 1) VRM is equal to VSM up to Tvj = 110 °C; de-rating of 0.11% per °C applicable for Tj below +5 °C Mechanical data Maximum rated values Note 1 Parameter Symbol Conditions Mounting force FM Acceleration a Acceleration a min 81 typ 90 max Unit 108 kN Device unclamped 50 m/s 2 Device clamped 100 m/s 2 Characteristic values Parameter Symbol Conditions Weight m Housing thickness H Surface creepage distance DS 53 mm Air strike distance Da 22 mm FM = 90 kN, Ta = 25 °C min typ 35 Note 1 Maximum rated values indicate limits beyond which damage to the device may occur ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. max Unit 2.9 kg 35.6 mm 5STB 13N6500 On-state Maximum rated values Note 1 Parameter Symbol Conditions Average on-state current IT(AV)M RMS on-state current IT(RMS) RMS on-state current IT(RMS) min typ Half sine wave, Tc = 70 °C Full sine wave, Tc = 70 °C max Unit 1405 A 2205 A 3120 A 3 A 6 A2s 3 A 6 A2s Peak non-repetitive surge current ITSM tp = 10 ms, Tvj = 125 °C, sine wave after surge: 22.0×10 Limiting load integral I2t VD = VR= 0 V 2.42×10 Peak non-repetitive surge current ITSM tp = 8.3 ms, Tvj = 125 °C, sine wave after surge: 24.0×10 Limiting load integral I2t VD = VR= 0 V 2.39×10 Characteristic values Parameter Symbol Conditions On-state voltage VT IT = 1500 A, Tvj = 125 °C 2.12 V Threshold voltage VT0 IT = 670 A - 2000 A, Tvj = 125 °C 1.2 V Slope resistance rT 0.6 mΩ Holding current IH Tvj = 25 °C 300 mA Tvj = 125 °C 175 mA Tvj = 25 °C 500 mA Tvj = 125 °C 300 mA Latching current IL min typ max Unit Switching Maximum rated values Note 1 Parameter Symbol Conditions Critical rate of rise of onstate current di/dtcrit Critical rate of rise of onstate current di/dtcrit Circuit commutated turn-off tq time min Tvj = 125 °C, Cont. ITRM = 2000 A, f = 50 Hz VD ≤ 3750 V, Cont. IFG = 2 A, tr = 0.5 µs f = 1Hz Tvj = 125 °C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/µs, VD ≤ 0.67⋅VRM, dvD/dt = 20V/µs, typ max Unit 250 A/µs 500 A/µs 800 µs Characteristic values Parameter Symbol Conditions Recovery charge Qrr Recovery charge IRM Gate turn-on delay time tgd Tvj = 125 °C, ITRM = 2000 A, VR = 200 V, diT/dt = -1.5 A/µs min typ max Unit 2400 3800 µAs 50 70 A 3 µs Tvj = 25 °C, VD = 0.4⋅VRM, IFG = 2 A, tr = 0.5 µs ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1035-03 May 06 page 2 of 7 5STB 13N6500 Triggering Maximum rated values Note 1 Parameter Symbol Conditions Peak forward gate voltage VFGM 12 V Max. rated peak forward gate current IFGM 10 A Peak reverse gate voltage VRGM 10 V 3 W Max. rated gate power loss PG Max. rated peak forward gate power min typ For DC gate current PGM max Unit see Fig. 9 Characteristic values Parameter Symbol Conditions Gate trigger voltage VGT Tvj = 25 °C min typ max 2.6 Unit V Gate trigger current IGT Tvj = 25 °C 400 mA Gate non-trigger voltage VGD VD = 0.4 x VRM, Tvj = 125 °C 0.3 V Gate non-trigger current IGD VD = 0.4 x VRM 10 mA Thermal Maximum rated values Note 1 Parameter Symbol Conditions Operating junction temperature range Tvj min Storage temperature range Tstg typ -40 max Unit 125 °C 140 °C max Unit Characteristic values Parameter Symbol Conditions min typ Thermal resistance junction Rth(j-c) to case Double-side cooled Fm = 81...108 kN 11.4 K/kW (Valid for one thyristor half no heat flow to the second half.) Rth(j-c)A Anode-side cooled Fm = 81...108 kN 22.8 K/kW Rth(j-c)C Cathode-side cooled Fm = 81...108 kN 22.8 K/kW Double-side cooled Fm = 81...108 kN 2 K/kW Single-side cooled Fm = 81...108 kN 4 K/kW Thermal resistance case to Rth(c-h) heatsink Rth(c-h) Analytical function for transient thermal impedance: n Z th(j- c) (t) = ∑ R i (1 - e- t/τ i ) i =1 i 1 2 3 4 Ri(K/kW) 6.770 2.510 1.340 0.780 τi(s) 0.8651 0.1558 0.0212 0.0075 Fig. 1 Transient thermal impedance junction-to case ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1035-03 May 06 page 3 of 7 5STB 13N6500 On-state characteristic model: V = A + B ⋅ I + C ⋅ ln(I + 1) + D ⋅ I T max T T T Valid for iT = 200 – 2000 A A 1.328 B C -6 257.0×10 D -3 -92.0×10 -3 28.0×10 Fig. 2 On-state characteristics, Tj = 125°C, 10ms half sine Fig. 3 On-state voltage characteristics Tcase 130 (°C) Double-sided cooling 125 120 DC 180° rectangular 180° sine 120° rectangular 115 110 105 100 95 90 85 5STB 13N6500 80 75 70 0 500 1000 1500 2000 2500 ITAV (A) Fig. 4 On-state power dissipation vs. mean on-state current. Switching losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. Switching losses ignored. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1035-03 May 06 page 4 of 7 5STB 13N6500 Fig. 6 Surge on-state current vs. pulse length. Half-sine wave. IG (t) 100 % 90 % IGM IGM IGon diG/dt tr tp(IGM) Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. ≈ 2..5 A ≥ 1.5 IGT ≥ 2 A/µs ≤ 1 µs ≈ 5...20 µs diG/dt IGon 10 % t tr tp (IGM) tp (IGon) Fig. 8 Recommended gate current waveform Fig. 9 Max. peak gate power loss Fig. 10 Recovery charge vs. decay rate of on-state current Fig. 11 Peak reverse recovery current vs. decay rate of on-state current ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1035-03 May 06 page 5 of 7 5STB 13N6500 Turn-on and Turn-off losses Fig. 12 Turn-on energy, half sinusoidal waves Fig. 13 Turn-on energy, rectangular waves Fig. 14 Turn-off energy, half sinusoidal waves Fig. 15 Turn-off energy, rectangular waves Turn-off Total power loss for repetitive waveforms: PTOT = PT + Won ⋅ f + Woff ⋅ f where T 1 PT = ∫ IT ⋅ VT (IT ) dt T 0 Fig. 16 Current and voltage waveforms at turn-off Fig. 17 Relationships for power loss ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. Doc. No. 5SYA1035-03 May 06 page 6 of 7 5STB 13N6500 g g Fig. 18 Device Outline Drawing Related documents: 5SYA 2020 Design of RC-Snubber for Phase Control Applications 5SYA 2034 Gate-Drive Recommendations for PCT's 5SYA 2036 Recommendations regarding mechanical clamping of Press Pack High Power Semiconductors 5SZK 9104 Specification of environmental class for pressure contact diodes, PCTs and GTO, STORAGE available on request, please contact factory 5SZK 9105 Specification of environmental class for pressure contact diodes, PCTs and GTO, TRANSPORTATION available on request, please contact factory Please refer to http://www.abb.com/semiconductors for actual versions. ABB Switzerland Ltd, Semiconductors reserves the right to change specifications without notice. ABB Switzerland Ltd Semiconductors Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone Fax Email Internet +41 (0)58 586 1419 +41 (0)58 586 1306 [email protected] www.abb.com/semiconductors Doc. No. 5SYA1035-03 May 06