VDSM = 2800 V ITAVM = 5490 A ITRMS = 8625 A ITSM = 75000 A VT0 = 0.86 V rT = 0.070 mΩ Phase Control Thyristor 5STP 45Q2800 Doc. No. 5SYA1050-01 Sep.00 • Patented free-floating silicon technology • Low on-state and switching losses • Designed for traction, energy and industrial applications • Optimum power handling capability • Interdigitated amplifying gate. Blocking Part Number VDRM 5STP 45Q2800 VRRM VRSM1 5STP 45Q2600 5STP 45Q2200 Conditions 2800 V 2600 V 2200 V f = 50 Hz, tp = 10ms 3000 V 2800 V 2400 V tp = 5 ms, single pulse IDRM ≤ 400 mA VDRM IRRM ≤ 400 mA VRRM dV/dtcrit 1000 V/µs @ Exp. to 0.67xVDRM Mechanical data FM a Mounting force nom. 90 kN min. 81 kN max. 108 kN Acceleration Device unclamped 50 m/s 2 Device clamped 100 m/s2 m Weight 2.1 kg DS Surface creepage distance 36 mm Da Air strike distance 15 mm ABB Semiconductors AG reserves the right to change specifications without notice. Tj = 125°C 5STP 45Q2800 On-state ITAVM Max. average on-state current 5490 A ITRMS Max. RMS on-state current 8625 A ITSM Max. peak non-repetitive 75000 A tp = 10 ms Tj = surge current 79000 A tp = 8.3 ms After surge: Limiting load integral 28125 kA2s tp = 10 ms VD = VR = 0V 25900 kA2s tp = 8.3 ms I2t Half sine wave, TC = 70°C VT On-state voltage 1.29 V IT = 6000 A VT0 rT Threshold voltage Slope resistance 0.86 V 0.070 mΩ IT = 3000 - 9000 A IH Holding current 40-100 mA Tj = 25°C 20-75 mA Tj = 125°C 100-500 mA Tj = 25°C 150-350 mA Tj = 125°C IL Latching current Tj = 125°C 125°C Switching di/dtcrit Critical rate of rise of on-state 250 A/µs Cont. VD ≤ 0.67⋅VDRM current 500 A/µs 60 sec. ITRM = = 2.0 A tr = 0.5 µs IFG = 2.0 A tr = 0.5 µs Delay time ≤ 3.0 µs VD = 0.4⋅VDRM tq Turn-off time ≤ 400 µs VD ≤ 0.67⋅VDRM ITRM = dvD/dt = 20V/µs VR Recovery charge min 4200 µAs max 6500 µAs 3000 A f = 50 Hz IFG td Qrr Tj = 125°C 3000 A Tj = 125°C > 200 V diT/dt = -5 A/µs Triggering VGT Gate trigger voltage 2.6 V Tj = 25°C IGT Gate trigger current 400 mA Tj = 25°C VGD Gate non-trigger voltage 0.3 V VD = 0.4⋅VDRM IGD Gate non-trigger current 10 mA VD = 0.4⋅VDRM VFGM Peak forward gate voltage 12 V IFGM Peak forward gate current 10 A VRGM Peak reverse gate voltage 10 V PG Maximum gate power loss 3W ABB Semiconductors AG reserves the right to change specifications without notice. 2 of 6 Doc. No. 5SYA1050-01 Sep.00 5STP 45Q2800 Thermal Tj max Max. junction temperature Tj stg Storage temperature range Thermal resistance RthJC 125°C -40...150°C junction to case RthCH 10 K/kW Anode side cooled 10 K/kW Cathode side cooled 5 K/kW Double side cooled Thermal resistance case to 2 K/kW Single side cooled heat sink 1 K/kW Double side cooled Analytical function for transient thermal impedance: n ZthJC(t) = ∑ Ri(1 - e -t/τ i ) i =1 i 1 2 3 4 Ri(K/kW) 3.27 0.736 0.661 0.312 τi(s) 0.5237 0.1082 0.02 0.0075 Fig. 1 Transient thermal impedance junction to case. On-state characteristic model: VT = A + B ⋅ iT + C ⋅ ln(iT + 1) + D ⋅ IT Valid for iT = 500 – 15000 A Fig 2. On-state characteristics. A B C D -0.096289 0.000051 0.135731 -0.001358 Fig. 3 On state characteristics. ABB Semiconductors AG reserves the right to change specifications without notice. 3 of 6 Doc. No. 5SYA1050-01 Sep.00 5STP 45Q2800 Tcase (°C) 130 Double-sided cooling 125 120 DC 180° rectangular 180° sine 120° rectangular 115 110 105 100 95 90 85 5STP 45Q2800 80 75 70 0 1000 2000 3000 4000 5000 6000 7000 8000 ITAV (A) Fig. 4 On-state power dissipation vs. mean onstate current. Turn-on losses excluded. Fig. 5 Max. permissible case temperature vs. mean on-state current. Fig. 6 Surge on-state current vs. pulse length. Half-sine wave. Fig. 7 Surge on-state current vs. number of pulses. Half-sine wave, 10 ms, 50Hz. ABB Semiconductors AG reserves the right to change specifications without notice. 4 of 6 Doc. No. 5SYA1050-01 Sep.00 5STP 45Q2800 Fig. 8 Gate trigger characteristics. Fig. 9 Max. peak gate power loss. Fig. 10 Recovery charge vs. decay rate of on-state current. Fig. 11 Peak reverse recovery current vs. decay rate of on-state current. Turn –off time, typical parameter relationship. Fig. 12 tq/tq1 = f1(Tj) Fig. 13 tq/tq1 = f2(-di/dt) tq = tq1 • tq/tq1 f1(Tj) • tq/tq1 f2(-di/dt) • tq/tq1 f3(dv/dt) Fig. 14 tq/tq1 = f3(dv/dt) tq1 :at normalized values (see page 2) tq : at varying conditions ABB Semiconductors AG reserves the right to change specifications without notice. 5 of 6 Doc. No. 5SYA1050-01 Sep.00 5STP 45Q2800 Turn-on and Turn-off losses Fig. 15 W on = f(IT, tP), Tj = 125°C. Fig. 16 Half sinusoidal waves. Fig. 17 W off = f(V0,IT), Tj = 125°C. Half sinusoidal waves. tP = 10 ms. W on = f(IT, di/dt), Tj = 125°C. Rectangular waves. Fig. 18 W off = f(V0,di/dt), Tj = 125°C. Rectangular waves. ABB Semiconductors reserves the right to change specifications without notice. ABB Semiconductors AG Fabrikstrasse 3 CH-5600 Lenzburg, Switzerland Telephone +41 (0)62 888 6419 Fax +41 (0)62 888 6306 Email [email protected] Internet www.abbsem.com Doc. No. 5SYA1050-01 Sep.00