APT1201R2BFLL
APT1201R2SFLL
1200V 12A 1.200Ω
POWER MOS 7
R
BFLL
FREDFET
D3PAK
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
SFLL
D
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol
TO-247
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT1201R2BFLL_SFLL
UNIT
1200
Volts
Drain-Source Voltage
12
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
403
Watts
Linear Derating Factor
3.23
W/°C
PD
TJ,TSTG
48
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
1
Volts
-55 to 150
°C
300
Amps
12
(Repetitive and Non-Repetitive)
1
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1200
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 6A)
TYP
MAX
UNIT
Volts
1.20
Ohms
Zero Gate Voltage Drain Current (VDS = 1200V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 960V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
5-2004
Characteristic / Test Conditions
050-7393 Rev B
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT1201R2BFLL_ SFLL
Test Conditions
Characteristic
C iss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
C rss
Reverse Transfer Capacitance
f = 1 MHz
Qg
Total Gate Charge
3
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
ID = 12A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
VDD = 600V
Turn-off Delay Time
tf
ID = 12A @ 25°C
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ns
465
VDD = 800V, VGS = 15V
100
ID = 12A, RG = 5Ω
INDUCTIVE SWITCHING @ 125°C
6
nC
21
RG = 1.6Ω
INDUCTIVE SWITCHING @ 25°C
6
UNIT
pF
70
100
14
65
8
18
29
VDD = 600V
Rise Time
MAX
2540
365
VGS = 10V
Gate-Source Charge
td(off)
TYP
VGS = 0V
Qgs
tr
MIN
µJ
935
VDD = 800V, VGS = 15V
ID = 12A, RG = 5Ω
135
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
TYP
MAX
12
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
dv/
MIN
Characteristic / Test Conditions
Peak Diode Recovery
dt
dv/
UNIT
Amps
(Body Diode)
48
(VGS = 0V, IS = -12A)
1.3
Volts
18
V/ns
dt
5
t rr
Reverse Recovery Time
(IS = -12A, di/dt = 100A/µs)
Tj = 25°C
210
Tj = 125°C
710
Q rr
Reverse Recovery Charge
(IS = -12A, di/dt = 100A/µs)
Tj = 25°C
1.0
Tj = 125°C
3.6
IRRM
Peak Recovery Current
(IS = -12A, di/dt = 100A/µs)
Tj = 25°C
10
Tj = 125°C
14
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.31
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.25
0.7
0.20
0.5
Note:
0.10
0.3
0.05
0.1
0.05
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
5-2004
050-7393 Rev B
0.9
0.15
t1
t2
0
10-5
SINGLE PULSE
10-4
°C/W
4 Starting Tj = +25°C, L = 18.06mH, RG = 25Ω, Peak IL = 12A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ ID-12A di/dt ≤ 700A/µs VR ≤ 1200 TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.35
0.30
UNIT
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
0.0258
Power
(watts)
0.107
0.177
0.00295F
0.0114F
0.174F
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Junction
temp. (°C)
20
TJ = -55°C
15
TJ = +25°C
TJ = +125°C
5
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
10
8
6
4
2
25
10
5.5V
05
1.40
V
NORMALIZED TO
= 10V @ I = 6A
GS
D
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
2
4 6 8 10 12 14 16 18 20
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
V
D
GS
1.05
1.00
0.95
0.90
0.85
-50
1.2
= 6A
= 10V
2.0
1.5
1.0
0.5
-50 -25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
0.8
5-2004
I
1.10
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
0.0
6V
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
12
0
15
0.7
0.6
-50 -25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7393 Rev B
0
6.5V
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
10
7V
5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
25
VGS =15,10 & 8V
20
0
Case temperature. (°C)
30
APT1201R2BFLL_SFLL
25
48
5,000
5
100µS
1mS
1
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
.1
1
10
100
1200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
D
= 12A
12
VDS=100V
VDS=250V
8
VDS=400V
4
0
0
20
40
60
80
100 120 140
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
C, CAPACITANCE (pF)
Ciss
10
td(off)
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
40
R
G
tf
= 800V
tr and tf (ns)
50
DD
= 5Ω
T = 125°C
J
40
L = 100µH
30
20
V
30
DD
R
G
= 800V
= 5Ω
T = 125°C
J
L = 100µH
20
tr
10
td(on)
5
1600
10
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
1400
G
5
10
1400
Eon
1200
Eon
L = 100µH
E ON includes
diode reverse recovery.
800
600
400
Eoff
200
5
15
20
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
= 800V
J
1000
0
20
= 5Ω
T = 125°C
1200
15
SWITCHING ENERGY (µJ)
td(on) and td(off) (ns)
V
10
SWITCHING ENERGY (µJ)
Crss
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
60
5-2004
100
50
70
0
Coss
10
80
0
1,000
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
050-7393 Rev B
APT1201R2BFLL_SFLL
10,000
10
1000
800
600
V
400
Eoff
20
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
DD
D
= 800V
= 12A
T = 125°C
J
200
15
I
0
L = 100µH
E ON includes
diode reverse recovery.
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT1201R2BFLL_SFLL
Gate Voltage
10%
90%
Gate Voltage
TJ = 125°C
td(off)
td(on)
TJ = 125°C
DrainVoltage
tr
Drain Current
90%
tf
90%
5%
5%
10%
10%
Drain Current
DrainVoltage
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
0
Figure 19, Turn-off Switching Waveforms and Definitions
APT15DF120B
V CE
IC
V DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
TO-247 Package Outline (BFLL)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
D PAK Package Outline (SFLL)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
Drain
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
19.81 (.780)
20.32 (.800)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
2.21 (.087)
2.59 (.102)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
5-2004
4.50 (.177) Max.
050-7393 Rev B
0.46 (.018)
0.56 (.022) {3 Plcs}
2.87 (.113)
3.12 (.123)