APT30M75BLL
APT30M75SLL
300V 44A 0.075Ω
R
POWER MOS 7
MOSFET
BLL
D3PAK
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
SLL
D
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
MAXIMUM RATINGS
Symbol
TO-247
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT30M75
UNIT
300
Volts
44
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
329
Watts
Linear Derating Factor
2.63
W/°C
VGSM
PD
TJ,TSTG
176
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
-55 to 150
Operating and Storage Junction Temperature Range
TL
1
44
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
Amps
30
4
mJ
1300
STATIC ELECTRICAL CHARACTERISTICS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
300
Volts
44
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 22A)
TYP
MAX
0.075
Zero Gate Voltage Drain Current (VDS = 300V, VGS = 0V)
100
Zero Gate Voltage Drain Current (VDS = 240V, VGS = 0V, TC = 125°C)
500
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
Ohms
µA
±100
nA
5
Volts
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
1-2003
BVDSS
Characteristic / Test Conditions
050-7155 Rev A
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT30M75BLL - SLL
Test Conditions
Characteristic
MIN
TYP
C iss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
771
Reverse Transfer Capacitance
f = 1 MHz
43
VGS = 10V
57
VDD = 200V
21
C rss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
ID = 44A @ 25°C
td(off)
tf
3
VDD = 200V
ID = 44A @ 25°C
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
2
INDUCTIVE SWITCHING @ 25°C
268
VDD = 200V, VGS = 15V
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
ID = 44A, RG = 5Ω
6
ns
20
RG = 0.6Ω
Fall Time
nC
13
VGS = 15V
Turn-off Delay Time
pF
23
RESISTIVE SWITCHING
Rise Time
UNIT
3018
VGS = 0V
3
MAX
189
INDUCTIVE SWITCHING @ 125°C
µJ
402
VDD = 200V VGS = 15V
ID = 44A, RG = 5Ω
220
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
44
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -ID44A, dl S /dt = 100A/µs)
416
ns
Q rr
Reverse Recovery Charge (IS = -ID44A, dl S /dt = 100A/µs)
5.9
µC
dv/
dt
Peak Diode Recovery
dv/
176
(Body Diode)
1.3
(VGS = 0V, IS = -ID44A)
dt
5
Amps
Volts
5
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.38
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.34mH, RG = 25Ω, Peak IL = 44A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID44A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.30
0.7
0.25
0.5
0.20
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7155 Rev A
1-2003
0.40
0.35
0.15
0.3
Duty Factor D = t1/t2
0.1
0.05
Peak TJ = PDM x ZθJC + TC
0.05
0
t1
t2
0.10
10-5
SINGLE PULSE
10-4
°C/W
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT30M75BLL - SLL
100
RC MODEL
Power
(Watts)
0.158
0.189
0.00802
0.165
8.5V
80
70
8V
60
50
7.5
40
30
7V
20
6.5V
10
Case temperature
120
TJ = -55°C
100
80
60
40
TJ = +25°C
20
0
TJ = +125°C
0
2
4
6
8
10
12
14
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
40
35
30
25
20
15
10
5
0
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
NORMALIZED TO
= 10V @ I = 22A
GS
D
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
20
40
60
80
100
120
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
I
V
D
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
= 22A
GS
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
V
1.15
45
0.0
-50
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
1-2003
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS(ON) MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
140
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
160
6V
0
050-7155 Rev A
Junction
temp. ( ”C)
0.00334
ID, DRAIN CURRENT (AMPERES)
0.0329
VGS =15 &10V
90
APT30M75BLL - SLL
176
20,000
OPERATION HERE
LIMITED BY RDS (ON)
10,000
Ciss
100µS
10
1mS
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
100
10
16
= 44A
12
VDS=60V
VDS=150V
VDS=240V
4
0
0
10
20
30
40
50 60
70 80
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1
10
100
300
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
8
100
10mS
1
D
Coss
Crss
TC =+25°C
TJ =+150°C
SINGLE PULSE
I
1,000
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
70
50
V
G
60
J
DD
R
30
G
L = 100µH
50
= 200V
= 5Ω
tr and tf (ns)
td(on) and td(off) (ns)
V
= 200V
= 5Ω
T = 125°C
td(off)
40
DD
R
T = 125°C
J
L = 100µH
20
40
tf
30
tr
20
td(on)
10
10
5
800
15
35
45
55
65
75
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
V
DD
R
G
SWITCHING ENERGY (µJ)
1-2003
050-7155 Rev A
EON includes
diode reverse recovery.
400
200
Eoff
15
15
25
700
Eon
L = 100µH
5
5
800
= 200V
J
0
35
45
55
65
75
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
= 5Ω
T = 125°C
600
0
25
25
35
45
55
65
75
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
SWITCHING ENERGY (µJ)
0
600
500
Eon
400
Eoff
300
V
DD
I
D
200
= 200V
= 44A
T = 125°C
J
L = 100µH
EON includes
100
0
diode reverse recovery.
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT30M75BLL - SLL
Gate Voltage
10 %
90%
Gate Voltage
TJ = 125 C
td(on)
TJ = 125 C
td(off)
tr
Drain Voltage
90%
90%
tf
Drain Current
5%
5%
10%
Drain Voltage
10 %
Drain Current
0
Switching Energy
Switching Energy
Figure 18, Turn-on Switching Waveforms and Definitions
Figure 19, Turn-off Switching Waveforms and Definitions
APT30D30B
V CE
IC
V DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
Drain
D PAK Package Outline
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
5.38 (.212)
6.20 (.244)
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
5.45 (.215) BSC
{2 Plcs.}
Gate
Drain
Source
Source
Drain
Gate
Dimensions in Millimeters (Inches)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT's devices are covered by one or more of the following U.S.patents:
1.98 (.078)
2.08 (.082)
4,895,810
5,256,583
5,045,903
4,748,103
5,089,434
5,283,202
5,182,234
5,231,474
5,019,522
5,434,095
5,262,336
5,528,058
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
1-2003
4.50 (.177) Max.
050-7155 Rev A
0.46 (.018)
0.56 (.022) {3 Plcs}
2.87 (.113)
3.12 (.123)