APT50M50L2FLL
500V 89A 0.050Ω
POWER MOS 7
R
FREDFET
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Increased Power Dissipation
• Easier To Drive
• Lower Gate Charge, Qg
• Popular TO-264 MAX Package
TO-264
Max
D
G
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
VDSS
ID
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT50M50L2LL
UNIT
500
Volts
Drain-Source Voltage
89
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
893
Watts
Linear Derating Factor
7.14
W/°C
PD
TJ,TSTG
356
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
EAS
1
-55 to 150
Amps
89
1
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
Volts
50
4
mJ
3200
STATIC ELECTRICAL CHARACTERISTICS
Characteristic / Test Conditions
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, 44.5A)
TYP
MAX
UNIT
Volts
0.050
Ohms
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
050-7115 Rev B 2-2004
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT50M50L2FLL
Characteristic
Ciss
Input Capacitance
VGS = 0V
Coss
Output Capacitance
VDS = 25V
C rss
Total Gate Charge
Qgs
3
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
ID = 89A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
Rise Time
td(off)
VDD = 250V
Turn-off Delay Time
tf
ID = 89A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
1650
ID = 89A, RG = 3Ω
INDUCTIVE SWITCHING @ 125°C
6
ns
1490
VDD = 333V, VGS = 15V
Eon
nC
8
RG = 0.6Ω
Eon
UNIT
pF
105
200
50
105
24
22
56
VGS = 10V
Qgd
MAX
10550
2060
VDD = 250V
Gate-Source Charge
tr
TYP
f = 1 MHz
Reverse Transfer Capacitance
Qg
MIN
Test Conditions
µJ
2105
VDD = 333V VGS = 15V
ID = 89A, RG = 3Ω
1835
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
VSD
dv/
Characteristic / Test Conditions
MIN
TYP
89
Continuous Source Current (Body Diode)
Amps
Pulsed Source Current
(Body Diode)
356
Diode Forward Voltage
2
(VGS = 0V, IS = -89A)
1.3
Volts
15
V/ns
dv/
dt
5
Reverse Recovery Time
(IS = -89A, di/dt = 100A/µs)
Tj = 25°C
300
Tj = 125°C
600
Q rr
Reverse Recovery Charge
(IS = -89A, di/dt = 100A/µs)
Tj = 25°C
2.6
Tj = 125°C
10
IRRM
Peak Recovery Current
(IS = -89A, di/dt = 100A/µs)
Tj = 25°C
17
Tj = 125°C
34
t rr
UNIT
1
Peak Diode Recovery
dt
MAX
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
MAX
0.14
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.14
0.9
0.12
0.7
Note:
0.5
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7115 Rev B 2-2004
0.16
0.08
0.06
0.3
0.02
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.1
0.05
0
10-5
t1
t2
0.04
SINGLE PULSE
10-4
°C/W
4 Starting Tj = +25°C, L = 0.81mH, RG = 25Ω, Peak IL = 89A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -89A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.10
UNIT
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT50M50L2FLL
200
15 &10V
7.5V
RC MODEL
Junction
temp. (°C)
0.0622
0.0191F
Power
(watts)
0.0778
0.209F
ID, DRAIN CURRENT (AMPERES)
180
160
7V
140
120
6.5V
100
80
6V
60
40
5.5V
20
Case temperature. (°C)
5V
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
180
VDS> ID (ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
140
120
100
TJ = -55°C
80
TJ = +125°C
60
TJ = +25°C
40
20
0
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
90
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
70
60
50
40
30
20
10
0
25
NORMALIZED TO
= 10V @ I = 44.5A
GS
D
1.3
1.2
1.1
VGS=10V
1.0
VGS=20V
0.9
0.8
0
20
40 60 80 100 120 140 160 180
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
I
= 44.5A
V
= 10V
D
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, RDS(ON) vs. TEMPERATURE
1.05
1.00
0.95
0.90
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
GS
2.0
1.10
0.85
-50
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
V
1.15
80
0.0
-50
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.4
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7115 Rev B 2-2004
ID, DRAIN CURRENT (AMPERES)
160
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
APT50M50L2FLL
356
30,000
100
100µS
10
1mS
VDS=100V
12
VDS=250V
VDS=400V
8
4
0
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11,CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
IDR, REVERSE DRAIN CURRENT (AMPERES)
= 89A
D
Crss
100
10
1
10
100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
I
Coss
1,000
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
Ciss
10,000
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
0
50
100
150
200
250
300
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
100
100
TJ =+150°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
180
V
td(off)
90
160
V
60
DD
R
G
= 3Ω
T = 125°C
J
50
L = 100µH
40
100
80
40
20
td(on)
10
0
10
30
V
DD
R
G
tr
20
0
10
70
90
110 130 150
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
50
70
90
110 130 150
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
V
8000
I
E ON includes
diode reverse recovery.
2000
Eon
1500
1000
Eoff
500
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
050-7115 Rev B 2-2004
50
DD
D
= 333V
= 89A
Eoff
T = 125°C
J
L = 100µH
0
10
30
9000
= 333V
= 3Ω
T = 125°C
2500
tf
J
L = 100µH
60
30
3000
= 3Ω
120
= 333V
tr and tf (ns)
td(on) and td(off) (ns)
G
140
70
3500
= 333V
DD
R
T = 125°C
80
4000
TJ =+25°C
J
7000
L = 100µH
E ON includes
6000
diode reverse recovery.
5000
4000
3000
Eon
2000
1000
0
30
50
70
90
110 130 150
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT50M50L2FLL
10 %
90%
Gate Voltage
TJ = 125 C
td(on)
Gate Voltage
T = 125 C
J
t
d(off)
90%
Drain Current
90%
Drain Voltage
tr
t
f
5%
10 %
10%
0
Drain Voltage
Switching Energy
Switching Energy
Drain Current
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT60DF60
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
TO-264 MAXTM(L2) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
19.51 (.768)
20.50 (.807)
25.48 (1.003)
26.49 (1.043)
2.29 (.090)
2.69 (.106)
19.81 (.780)
21.39 (.842)
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
050-7115 Rev B 2-2004
Drain
5.79 (.228)
6.20 (.244)