APT12040JVFR
1200V
Ω
0.400Ω
26A
POWER MOS V® FREDFET
S
S
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
27
2
T-
D
G
SO
"UL Recognized"
ISOTOP ®
• Faster Switching
• Avalanche Energy Rated
• Lower Leakage
• FAST RECOVERY BODY DIODE
D
G
• Popular SOT-227 Package
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT12040JVFR
UNIT
1200
Volts
Drain-Source Voltage
26
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
700
Watts
Linear Derating Factor
5.6
W/°C
VGSM
PD
TJ,TSTG
104
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
26
(Repetitive and Non-Repetitive)
EAR
Volts
1
Amps
50
4
mJ
3600
STATIC ELECTRICAL CHARACTERISTICS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
1200
Volts
26
Amps
On State Drain Current
2
(VDS > ID(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 0.5 ID[Cont.])
TYP
MAX
0.400
UNIT
Ohms
Zero Gate Voltage Drain Current (VDS = VDSS, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 0.8 VDSS, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
4
Volts
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
6-2004
BVDSS
Characteristic / Test Conditions
050-5848 Rev A
Symbol
DYNAMIC CHARACTERISTICS
APT12040JVFR
Characteristic
Symbol
Test Conditions
TYP
MAX
VGS = 0V
15000
18000
VDS = 25V
1240
1730
f = 1 MHz
640
960
VGS = 10V
800
1200
VDD = 600V
ID = 26A @ 25°C
64
400
96
600
Turn-on Delay Time
VGS = 15V
20
40
Rise Time
VDD = 600V
18
36
ID = 26A @ 25°C
90
135
RG = 0.6Ω
20
40
TYP
MAX
C iss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg
Total Gate Charge
Qgs
3
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
t d(on)
tr
t d(off)
Turn-off Delay Time
tf
Fall Time
MIN
UNIT
pF
nC
ns
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
Characteristic / Test Conditions
MIN
26
Continuous Source Current (Body Diode)
IS
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
dv/
Peak Diode Recovery
dt
dv/
UNIT
Amps
(Body Diode)
104
(VGS = 0V, IS = - 26A)
1.3
Volts
18
V/ns
dt
5
t rr
Reverse Recovery Time
(IS = -26A, di/dt = 100A/µs)
Tj = 25°C
300
Tj = 125°C
600
Q rr
Reverse Recovery Charge
(IS = -26A, di/dt = 100A/µs)
Tj = 25°C
1.8
Tj = 125°C
7.4
IRRM
Peak Recovery Current
(IS = -26A, di/dt = 100A/µs)
Tj = 25°C
15
Tj = 125°C
30
ns
µC
Amps
THERMAL/ PACKAGE CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
MAX
UNIT
0.18
40
°C/W
2500
VIsolation
RMS Voltage (50-60 Hz Sinusoidal Waveform From Terminals to Mounting Base for 1 Min.)
Torque
Maximum Torque for Device Mounting Screws and Electrical Terminations.
Volts
10
lb•in
3 See MIL-STD-750 Method 3471
4 Starting T = +25°C, L = 10.65mH, R = 25Ω, Peak I = 26A
j
G
L
5 I ≤ I 26A, di/ = 100A/µs, T ≤ 150°C, R = 2.0Ω V = 1200V.
S
D
j
G
R
dt
APT Reserves the right to change, without notice, the specifications and information contained herein.
1 Repetitive Rating: Pulse width limited by maximum junction
temperature.
2 Pulse Test: Pulse width < 380 µS, Duty Cycle < 2%
0.1
D=0.5
0.05
0.2
0.1
0.01
0.005
0.05
Note:
0.02
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-5848 Rev A
6-2004
0.2
0.01
SINGLE PULSE
t2
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
0.001
0.0005
10-5
t1
10-4
10-3
10-2
10-1
1.0
10
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
APT12040JVFR
50
VGS=6V, 7V, 10V & 15V
5V
40
30
20
4.5V
10
ID, DRAIN CURRENT (AMPERES)
4V
0
40
30
20
TJ = +125°C
10
TJ = -55°C
TJ = +25°C
0
0
2
4
6
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TYPICAL TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
25
20
15
10
5
0
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
4V
1.20
V
GS
NORMALIZED TO
= 10V @ 0.5 I [Cont.]
D
1.15
1.10
VGS=10V
VGS=20V
1.05
1.00
0.95
0
15
30
45
60
75
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.15
1.10
1.05
1.00
0.95
0.90
0.85
-50
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0.0
-50
10
1.2
I = 0.5 I [Cont.]
D
4.5V
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
25
2.5
20
1.1
1.0
0.9
0.8
6-2004
ID, DRAIN CURRENT (AMPERES)
30
30
0
4
8
12
16
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, TYPICAL OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
5V
40
0
0
100
200
300
400
500
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 2, TYPICAL OUTPUT CHARACTERISTICS
50
VGS=6V, 7V, 10V & 15V
0.7
0.6
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-5848 Rev A
ID, DRAIN CURRENT (AMPERES)
50
APT12040JVFR
200
10µS
100
50
100µS
OPERATION HERE
LIMITED BY RDS (ON)
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
70,000
50,000
1mS
10
5
10mS
1
100mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
.5
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
.01
.1
1
10
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, TYPICAL CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
D
VDS=120V
VDS=240V
12
VDS=600V
8
4
0
Coss
Crss
I = I [Cont.]
16
5,000
400
1
5 10
50 100
500 1200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
10,000
1,000
.1
20
Ciss
0
250
500
750 1000 1250 1500
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
200
100
50
TJ =+150°C
TJ =+25°C
10
5
1
0.2
0.4
0.6
0.8
1.0
1.2
1.4
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, TYPICAL SOURCE-DRAIN DIODE FORWARD VOLTAGE
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
7.8 (.307)
8.2 (.322)
r = 4.0 (.157)
(2 places)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
050-5848 Rev A
6-2004
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
"UL Recognized" File No. E145592
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.