APTGL475DA120D3G Boost chopper Trench + Field Stop IGBT4 Power Module 3 Q2 1 6 7 2 VCES = 1200V IC = 475A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies • Power Factor Correction Features • Trench + Field Stop IGBT 4 Technology - Low voltage drop - Low leakage current - Low switching losses - Soft recovery parallel diodes - Low diode VF - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level of integration • M6 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C Reverse Bias Safe Operating Area Tj = 125°C 800A @ 1100V TC = 25°C TC = 80°C TC = 25°C Unit V September, 2008 IC Max ratings 1200 610 475 900 ±20 2080 RBSOA Parameter Collector - Emitter Breakdown Voltage A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGL475DA120D3G – Rev 0 Symbol VCES APTGL475DA120D3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 400A Tj = 125°C VGE = VCE , IC = 15mA VGE = 20V, VCE = 0V Typ 5.0 1.8 2.2 5.8 Min Typ Max Unit 5 2.2 mA 6.5 400 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance QG Gate charge Td(on) Tr Td(off) Tf Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Turn-on Delay Time Tr Td(off) Tf Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Isc Short Circuit data Test Conditions VGE = 0V VCE = 25V f = 1MHz VGE= -8V / 15V ; VCE=600V IC=400A Inductive Switching (25°C) VGE = ±15V VCE = 600V IC = 400A RG = 1Ω Inductive Switching (150°C) VGE = ±15V VCE = 600V IC = 400A RG = 1Ω VGE = ±15V TJ = 150°C VCE = 600V IC = 400A TJ = 150°C RG = 1Ω VGE ≤15V ; VBus = 900V tp ≤10µs ; Tj = 150°C 24.6 1.62 1.38 nF 2.3 µC 200 40 400 ns 70 220 50 500 80 ns 33 mJ 42 mJ 1600 A Diode ratings and characteristics Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy VR=1200V IF = 400A VGE = 0V IF = 400A VR = 600V di/dt = 7000A/µs Min 1200 Typ Tj = 25°C Tj = 150°C TC = 80°C 400 Tj = 25°C 1.7 Tj = 150°C 1.65 Tj = 25°C 155 Tj = 150°C Tj = 25°C Tj = 150°C Tj = 25°C Tj = 150°C 300 37.2 78 16 32 www.microsemi.com Max 250 2000 Unit V µA A 2.2 September, 2008 IRRM Test Conditions V ns µC mJ 2-5 APTGL475DA120D3G – Rev 0 Symbol Characteristic VRRM Maximum Repetitive Reverse Voltage APTGL475DA120D3G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight For terminals To Heatsink M6 M6 2500 -40 -40 -40 3 3 Typ Max 0.072 0.14 Unit °C/W V 175 125 125 5 5 350 °C N.m g D3 Package outline (dimensions in mm) 1° A www.microsemi.com 3-5 APTGL475DA120D3G – Rev 0 September, 2008 DÉTAIL A APTGL475DA120D3G Typical Performance Curve Output Characteristics (VGE=15V) 800 Output Characteristics 800 TJ = 150°C VGE=19V 600 TJ=25°C VGE=15V TJ=150°C IC (A) IC (A) 600 400 400 VGE=9V 200 200 0 0 0 1 2 3 4 0 1 2 VCE (V) VCE (V) Transfert Characteristics 800 VCE = 600V VGE = 15V RG = 1.Ω TJ = 150°C TJ=25°C 60 E (mJ) IC (A) 400 Eoff 40 Err 20 TJ=150°C 200 4 Energy losses vs Collector Current 80 600 3 Eon 0 0 5 6 7 8 9 10 11 12 0 13 200 VGE (V) Switching Energy Losses vs Gate Resistance 800 640 IC (A) E (mJ) 120 800 960 Eon VCE = 600V VGE =15V IC = 400A TJ = 150°C 600 Reverse Bias Safe Operating Area 180 150 400 IC (A) 90 480 60 Eoff 320 30 Err 160 0 VGE=15V TJ=150°C RG=1.Ω 0 0 2.5 5 7.5 Gate Resistance (ohms) 10 0 300 600 900 VCE (V) 1200 1500 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration September, 2008 0.9 0.06 0.04 IGBT 0.7 0.5 0.3 0.02 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGL475DA120D3G – Rev 0 Thermal Impedance (°C/W) 0.08 APTGL475DA120D3G Forward Characteristic of diode 800 VCE=600V D=50% RG=1 Ω TJ=150°C Tc=75°C 150 ZCS 120 600 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 180 90 ZVS 60 400 200 30 TJ=150°C Hard switching TJ=25°C 0 0 0 120 240 360 480 600 0 0.4 IC (A) 0.8 1.2 1.6 VF (V) 2 2.4 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.16 0.14 0.12 0.1 0.08 0.06 Diode 0.9 0.7 0.5 0.3 0.04 0.02 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGL475DA120D3G – Rev 0 September, 2008 Rectangular Pulse Duration in Seconds