APTGF300DU120G Dual Common Source NPT IGBT Power Module C1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies C2 Q1 VCES = 1200V IC = 300A @ Tc = 80°C Q2 G1 G2 E1 E2 E G1 C1 E C2 E1 Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant E2 G2 Absolute maximum ratings IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Tc = 25°C Max ratings 1200 400 300 600 ±20 1780 Reverse Bias Safe Operating Area Tj = 150°C 600A @ 1200V RBSOA Parameter Collector - Emitter Breakdown Voltage Tc = 25°C Tc = 80°C Tc = 25°C Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGF300DU120G – Rev 3 november, 2007 Symbol VCES APTGF300DU120G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C T j = 25°C VGE =15V IC = 300A Tj = 125°C VGE = VCE, IC = 12mA VGE = ±20V, VCE = 0V Min Test Conditions VGE = 0V VCE = 25V f = 1MHz Min Typ 3.3 4 4.5 Max 500 750 3.9 Unit 6.5 ±1 V µA Max Unit µA V Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Inductive Switching (25°C) VGE = 15V VBus = 600V IC = 300A RG = 3Ω Inductive Switching (125°C) VGE = 15V VBus = 600V IC = 300A RG = 3Ω VGE = 15V Tj = 125°C VBus = 600V IC = 300A Tj = 125°C RG = 3Ω Typ 21 2.9 1.52 120 50 310 nF ns 30 130 60 ns 360 40 25 mJ 15 Diode ratings and characteristics VRRM IRM Test Conditions Maximum Reverse Leakage Current DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Typ Max 1200 Maximum Peak Repetitive Reverse Voltage IF VR=1200V IF = 300A IF = 300A VR = 600V di/dt =4500A/µs Er Min Reverse Recovery Energy www.microsemi.com Unit V Tj = 25°C 250 Tj = 125°C 500 Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 300 2.1 1.9 120 Tj = 125°C 210 Tj = 25°C 22 Tj = 125°C Tj = 25°C Tj = 125°C 43 7 15 µA A V ns µC mJ 2-5 APTGF300DU120G – Rev 3 november, 2007 Symbol Characteristic APTGF300DU120G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 2500 -40 -40 -40 3 2 Typ Max 0.07 0.12 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com www.microsemi.com 3-5 APTGF300DU120G – Rev 3 november, 2007 SP6 Package outline (dimensions in mm) APTGF300DU120G Typical Performance Curve Output Characteristics 600 500 500 TJ=25°C 300 200 VGE=20V VGE=12V 300 VGE=9V 100 0 0 0 1 2 3 VCE (V) 4 5 6 0 1 2 3 4 VCE (V) 5 6 Energy losses vs Collector Current Transfert Characteristics 600 70 VCE = 600V VGE = 15V RG = 3 Ω TJ = 125°C 60 500 50 E (mJ) 400 TJ=125°C 300 200 Eon Eoff 40 30 20 TJ=25°C 100 10 Er Eoff 0 0 5 6 7 8 9 10 11 0 12 100 200 300 400 500 600 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 100 700 VCE = 600V VGE =15V IC = 300A TJ = 125°C 60 600 Eon 500 IC (A) 80 E (mJ) VGE=15V 200 TJ=125°C 100 IC (A) TJ = 125°C 400 400 IC (A) IC (A) Output Characteristics (VGE=15V) 600 Eoff 40 400 300 VGE=15V TJ=125°C RG=3 Ω 200 20 100 Er 0 0 0 2 0 4 6 8 10 12 14 16 18 20 Gate Resistance (ohms) 300 600 900 1200 1500 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration 0.07 0.06 0.05 0.04 0.03 0.02 0.01 0.9 IGBT 0.7 0.5 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGF300DU120G – Rev 3 november, 2007 Thermal Impedance (°C/W) 0.08 APTGF300DU120G Forward Characteristic of diode VCE=600V D=50% RG=3 Ω TJ=125°C TC=75°C 80 ZVS 60 40 hard switching 20 600 500 TJ=125°C 400 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 100 300 TJ=25°C 200 ZCS 100 0 0 0 50 0 100 150 200 250 300 350 IC (A) 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.14 0.12 0.1 0.9 Diode 0.7 0.08 0.06 0.04 0.02 0.5 0.3 Single Pulse 0.1 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGF300DU120G – Rev 3 november, 2007 rectangular Pulse Duration (Seconds)