APTGT225DU170G Dual common source Trench + Field Stop IGBT® Power Module C2 Q2 G2 E1 E2 E G1 C1 E C2 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - M5 power connectors • High level of integration Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Low profile • RoHS Compliant E1 E2 G2 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA TC = 25°C Max ratings 1700 340 225 450 ±20 1250 Tj = 125°C 450A @ 1600V TC = 25°C TC = 80°C TC = 25°C Reverse Bias Safe Operating Area Unit V A July, 2006 Q1 G1 Application • AC Switches • Switched Mode Power Supplies • Uninterruptible Power Supplies V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGT225DU170G – Rev 1 C1 VCES = 1700V IC = 225A @ Tc = 80°C APTGT225DU170G All ratings @ Tj = 25°C unless otherwise specified Test Conditions ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter Saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Td(off) Turn-off Delay Time Tf Td(on) Tr Td(off) Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn-on Switching Energy Eoff Turn-off Switching Energy Min Test Conditions Maximum Reverse Leakage Current DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Er Reverse Recovery Energy Typ 2.0 2.4 5.8 Typ 20 0.8 0.66 370 40 Max Unit 500 2.4 µA 6.5 600 V nA Max Unit ns 180 400 50 800 ns 300 72 mJ 70.5 Typ Max 1700 Tj = 25°C Tj = 125°C IF = 225A Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 225 1.8 1.9 385 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 490 57 93 26 52 di/dt =2400A/µs www.microsemi.com Unit V VR=1700V IF = 225A VR = 900V V nF 650 Min Maximum Peak Repetitive Reverse Voltage IF 5.0 Inductive Switching (25°C) VGE = 15V VBus = 900V IC = 225A R G = 3.3Ω Inductive Switching (125°C) VGE = 15V VBus = 900V IC = 225A R G = 3.3Ω VGE = 15V Tj = 125°C VBus = 900V IC = 225A Tj = 125°C R G = 3.3Ω Symbol Characteristic IRM VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 225A Tj = 125°C VGE = VCE , IC = 4mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Reverse diode ratings and characteristics VRRM Min 500 750 µA A 2.2 V ns July, 2006 Symbol Characteristic µC mJ 2-5 APTGT225DU170G – Rev 1 Electrical Characteristics APTGT225DU170G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight To heatsink For terminals M6 M5 3500 -40 -40 -40 3 2 Typ Max 0.1 0.18 Unit °C/W V 150 125 100 5 3.5 280 °C N.m g July, 2006 SP6 Package outline (dimensions in mm) www.microsemi.com 3-5 APTGT225DU170G – Rev 1 See application note APT0601 - Mounting Instructions for SP6 Power Modules on www.microsemi.com APTGT225DU170G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 450 450 VGE=20V 300 300 IC (A) IC (A) 350 TJ=25°C 350 TJ=125°C 250 200 VGE =13V 250 200 150 150 100 100 50 50 0 VGE =15V VGE=9V 0 0 1 2 V CE (V) 3 4 0 Transfert Characteristics 400 TJ=25°C 120 250 E (mJ) 300 T J=125°C 200 2 3 VCE (V) VCE = 900V VGE = 15V RG = 3.3Ω TJ = 125°C 150 350 1 4 5 Energy losses vs Collector Current 180 450 IC (A) TJ = 125°C 400 400 Eon Eoff 90 Er 60 150 100 T J=125°C 30 50 0 0 5 6 7 8 9 10 11 12 0 13 100 Switching Energy Losses vs Gate Resistance Eon 500 90 400 IC (A) E (mJ) 400 500 VCE = 900V VGE =15V IC = 225A T J = 125°C 120 300 Reverse Bias Safe Operating Area 180 150 200 IC (A) V GE (V) Eoff 60 300 200 V GE=15V T J=125°C RG=3.3Ω Er 100 30 0 0 2 4 6 8 10 12 14 16 Gate Resistance (ohms) 18 0 20 400 800 1200 1600 2000 V CE (V) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.9 0.08 0.7 0.06 0.5 0.04 0.3 July, 2006 IGBT 0.1 0.02 0.1 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 rectangular Pulse Duration (Seconds) www.microsemi.com 1 10 4-5 APTGT225DU170G – Rev 1 Thermal Impedance (°C/W) 0.12 APTGT225DU170G Forward Characteristic of diode 450 V CE=900V D=50% RG =3.3Ω T J=125°C T C=75°C ZCS 15 ZVS 400 350 TJ =25°C 300 I C (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 20 10 250 200 T J=125°C 150 5 hard switching TJ =125°C 100 50 0 0 0 60 120 180 IC (A) 240 300 0 360 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 0.2 0.16 Diode 0.9 0.7 0.12 0.5 0.08 0.04 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGT225DU170G – Rev 1 July, 2006 rectangular Pulse Duration (Seconds)