APT5531BFLL
APT5531SFLL
550V 19A 0.310Ω
POWER MOS 7
R
FREDFET
BFLL
D3PAK
®
Power MOS 7 is a new generation of low loss, high voltage, N-Channel
enhancement mode power MOSFETS. Both conduction and switching
®
losses are addressed with Power MOS 7 by significantly lowering RDS(ON)
®
and Qg. Power MOS 7 combines lower conduction and switching losses
along with exceptionally fast switching speeds inherent with APT's
patented metal gate structure.
• Lower Input Capacitance
• Lower Miller Capacitance
• Lower Gate Charge, Qg
VDSS
ID
SFLL
• Increased Power Dissipation
• Easier To Drive
• TO-247 or Surface Mount D3PAK Package
• FAST RECOVERY BODY DIODE
MAXIMUM RATINGS
Symbol
TO-247
D
G
S
All Ratings: TC = 25°C unless otherwise specified.
Parameter
Drain-Source Voltage
APT5531
UNIT
550
Volts
19
Continuous Drain Current @ TC = 25°C
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
266
Watts
Linear Derating Factor
2.13
W/°C
VGSM
PD
TJ,TSTG
76
-55 to 150
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
1
19
1
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
°C
300
(Repetitive and Non-Repetitive)
EAR
Volts
Amps
30
4
mJ
960
STATIC ELECTRICAL CHARACTERISTICS
ID(on)
RDS(on)
IDSS
IGSS
VGS(th)
MIN
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
550
Volts
19
Amps
On State Drain Current
2
(VDS > I D(on) x R DS(on) Max, VGS = 10V)
Drain-Source On-State Resistance
2
(VGS = 10V, 9.5A)
TYP
MAX
0.310
UNIT
Ohms
Zero Gate Voltage Drain Current (VDS = 550V, VGS = 0V)
250
Zero Gate Voltage Drain Current (VDS = 440V, VGS = 0V, TC = 125°C)
1000
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
±100
nA
5
Volts
Gate Threshold Voltage (VDS = VGS, ID = 1mA)
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
µA
3-2003
BVDSS
Characteristic / Test Conditions
050-7223 Rev A
Symbol
APT5531BFLL - SFLL
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Input Capacitance
VGS = 0V
Coss
Output Capacitance
VDS = 25V
C rss
3
Total Gate Charge
Qgs
Qgd
Gate-Drain ("Miller ") Charge
Turn-on Delay Time
ID = 19A @ 25°C
RESISTIVE SWITCHING
VGS = 15V
Rise Time
td(off)
VDD = 275V
Turn-off Delay Time
tf
ID = 19A @ 25°C
Fall Time
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
6
ns
156
VDD = 367V, VGS = 15V
Eon
nC
7
RG = 0.6Ω
Eon
UNIT
pF
26
42
12
25
11
8
27
VGS = 10V
td(on)
MAX
1811
365
VDD = 275V
Gate-Source Charge
tr
TYP
f = 1 MHz
Reverse Transfer Capacitance
Qg
MIN
Test Conditions
C iss
ID = 19A, RG = 5Ω
76
INDUCTIVE SWITCHING @ 125°C
283
VDD = 367V VGS = 15V
µJ
84
ID = 19A, RG = 5Ω
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
ISM
Characteristic / Test Conditions
MIN
TYP
MAX
19
Continuous Source Current (Body Diode)
UNIT
Amps
Pulsed Source Current
1
(Body Diode)
76
VSD
Diode Forward Voltage
2
(VGS = 0V, IS = -19A)
1.3
Volts
dv/
Peak Diode Recovery
15
V/ns
dt
dv/
dt
5
Reverse Recovery Time
(IS = -19A, di/dt = 100A/µs)
Tj = 25°C
250
Tj = 125°C
400
Q rr
Reverse Recovery Charge
(IS = -19A, di/dt = 100A/µs)
Tj = 25°C
1.9
Tj = 125°C
6
IRRM
Peak Recovery Current
(IS = -19A, di/dt = 100A/µs)
Tj = 25°C
15
Tj = 125°C
26
t rr
ns
µC
Amps
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
MAX
0.47
RθJC
Junction to Case
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
0.9
0.40
0.7
0.30
0.5
Note:
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7223 Rev A
3-2003
0.50
0.20
0.3
t1
t2
0.10
0.1
SINGLE PULSE
0.05
10-5
10-4
°C/W
4 Starting Tj = +25°C, L = 5.32mH, RG = 25Ω, Peak IL = 19A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID19A di/dt ≤ 700A/µs VR ≤ VDSS TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0
UNIT
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
APT5531BFLL - SFLL
45
VGS =15 & 10V
Junction
temp. ( ”C)
0.205
0.00544F
Power
(Watts)
0.264
0.0981F
Case temperature
ID, DRAIN CURRENT (AMPERES)
40
RC MODEL
8V
35
7.5V
30
25
7V
20
6.5V
15
10
6V
05
5.5V
40
30
TJ = +125°C
20
TJ = +25°C
10
0
TJ = -55°C
0
2
4
6
8
10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
16
12
8
4
0
25
1.20
VGS=10V
1.10
VGS=20V
1.00
0.90
0.80
0
10
20
30
40
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
I
V
D
1.05
1.00
0.95
0.90
0.85
-50
1.2
= 9.5A
GS
1.10
-25
0
25
50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
= 10V
2.0
1.5
1.0
0.5
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
0.0
-50
GS
1.30
1.15
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
20
NORMALIZED TO
= 10V @ 9.5A
V
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
3-2003
50
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
0
5
10
15
20
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
050-7223 Rev A
ID, DRAIN CURRENT (AMPERES)
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
60
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
0
APT5531BFLL - SFLL
10,000
78
Ciss
100µS
10
TC =+25°C
TJ =+150°C
SINGLE PULSE
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
OPERATION HERE
LIMITED BY RDS (ON)
10mS
10
= 19A
VDS=110V
12
VDS=275V
8
VDS=440V
4
0
10
20
30
40
50
60
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
16
0
100
Crss
1
10
100
550
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
D
Coss
1mS
1
I
1,000
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
40
40
td(off)
30
V
DD
R
G
= 5Ω
T = 125°C
20
tf
= 367V
tr and tf (ns)
td(on) and td(off) (ns)
30
J
L = 100µH
V
20
DD
R
G
= 367V
= 5Ω
T = 125°C
J
L = 100µH
10
10
tr
td(on)
0
0
0
5
10
15
20
25
30
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
0
15
20
25
30
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
500
500
DD
R
G
SWITCHING ENERGY (µJ)
3-2003
050-7223 Rev A
= 367V
T = 125°C
400
J
Eon
L = 100µH
E ON includes
diode reverse recovery.
300
10
= 5Ω
200
100
SWITCHING ENERGY (µJ)
V
5
400
300
Eon
200
V
Eoff
100
I
DD
D
= 367V
= 19A
T = 125°C
J
L = 100µH
E ON includes
Eoff
0
0
5
10
15
20
25
30
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
diode reverse recovery.
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT5531BFLL - SFLL
Gate Voltage
90%
10 %
Gate Voltage
TJ = 125 C
T = 125 C
J
t
d(off)
td(on)
t
f
Drain Voltage
Drain Current
90%
90%
tr
10%
5%
5%
Drain Current
Drain Voltage
0
10 %
Switching Energy
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT15DF60B
IC
V DD
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
TO-247 Package Outline
15.49 (.610)
16.26 (.640)
Drain
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
D PAK Package Outline
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05 (.632)
Revised
4/18/95
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15 (.045)
13.79 (.543)
13.99 (.551)
13.41 (.528)
13.51 (.532)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
3.50 (.138)
3.81 (.150)
0.40 (.016)
0.79 (.031)
1.65 (.065)
2.13 (.084)
19.81 (.780)
20.32 (.800)
1.01 (.040)
1.40 (.055)
2.21 (.087)
2.59 (.102)
2.87 (.113)
3.12 (.123)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
3-2003
4.50 (.177) Max.
050-7223 Rev A
0.46 (.018)
0.56 (.022) {3 Plcs}