600V 60A 0.045Ω
APT60N60BCS
APT60N60SCS
APT60N60BCSG* APT60N60SCSG*
*G Denotes RoHS Compliant, Pb Free Terminal Finish.
Super Junction MOSFET
COOLMOS
(B)
TO
Power Semiconductors
-2
47
D3PAK
• Ultra Low RDS(ON)
(S)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
D
• Avalanche Energy Rated
• Extreme dv/dt Rated
G
• Popular TO-247 or Surface Mount D3 Package
S
MAXIMUM RATINGS
Symbol
VDSS
ID
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT60N60B_SCS(G)
UNIT
Drain-Source Voltage
600
Volts
Continuous Drain Current @ TC = 25°C
60
Continuous Drain Current @ TC = 100°C
38
1
Amps
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
Volts
Total Power Dissipation @ TC = 25°C
431
Watts
Linear Derating Factor
3.45
W/°C
PD
TJ,TSTG
TL
dv/
dt
IAR
230
Operating and Storage Junction Temperature Range
-55 to 150
°C
Lead Temperature: 0.063" from Case for 10 Sec.
260
MOSFET dv/dt Ruggedness (VDS = 480V)
50
V/ns
11
Amps
Avalanche Current
2
2
EAR
Repetitive Avalanche Energy
EAS
Single Pulse Avalanche Energy
3
3
mJ
1950
STATIC ELECTRICAL CHARACTERISTICS
V(BR)DSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
RDS(on)
IDSS
IGSS
VGS(th)
Drain-Source On-State Resistance
MIN
4
TYP
MAX
UNIT
Volts
600
(VGS = 10V, ID = 44A)
0.045
Ohms
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 600V, VGS = 0V, TC = 150°C)
250
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
±100
nA
3.9
Volts
Gate Threshold Voltage (VDS = VGS, ID = 3mA)
2.1
3
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG."
µA
3-2006
Characteristic / Test Conditions
050-7239 Rev B
Symbol
APT60N60B_SCS(G)
DYNAMIC CHARACTERISTICS
Symbol
Characteristic
Test Conditions
Ciss
Input Capacitance
Coss
VGS = 0V
Output Capacitance
VDS = 25V
Crss
Reverse Transfer Capacitance
f = 1 MHz
Qg
5
VGS = 10V
Gate-Source Charge
VDD = 400V
Total Gate Charge
Qgs
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
290
150
34
50
30
20
100
VGS = 15V
VDD = 400V
ID = 44A @ 25°C
RG = 3.3Ω
10
6
INDUCTIVE SWITCHING @ 25°C
VDD = 400V, VGS = 15V
675
ID = 44A, RG = 4.3Ω
520
6
INDUCTIVE SWITCHING @ 125°C
VDD = 400V, VGS = 15V
1100
ID = 44A, RG = 4.3Ω
635
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
MAX
7200
8500
RESISTIVE SWITCHING
Turn-off Delay Time
tf
TYP
ID = 44A @ 25°C
Rise Time
td(off)
MIN
UNIT
pF
190
nC
ns
µJ
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
IS
Characteristic / Test Conditions
TYP
MIN
Continuous Source Current (Body Diode)
MAX
44
ISM
Pulsed Source Current
1
(Body Diode)
180
VSD
Diode Forward Voltage
4
(VGS = 0V, IS = - 44A)
1.2
t rr
Reverse Recovery Time (IS = -44A, dl S/dt = 100A/µs)
Q rr
Reverse Recovery Charge (IS = -44A, dl S/dt = 100A/µs)
dv
/dt
Peak Diode Recovery dv/dt
Amps
Volts
ns
600
17
7
UNIT
µC
4
V/ns
MAX
UNIT
THERMAL CHARACTERISTICS
Symbol
Characteristic
RθJC
Junction to Case
RθJA
Junction to Ambient
MIN
TYP
0.29
62
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Repetitive avalanche causes additional power losses that can
be calculated as PAV = EAR*f
3 Starting Tj = +25°C, L = 33.23mH, RG = 25Ω, Peak IL = 11A
4 Pulse Test: Pulse width < 380µs, Duty Cycle < 2%
5 See MIL-STD-750 Method 3471
6 Eon includes diode reverse recovery. See figures 18, 20.
7 We do not recommend using this CoolMOS™ product in topologies
that have fee wheeling load current conducted in the body diode that is
hard commutated. The current commutation is very "snappy", resulting in
high di/dt at the completion of commutation, and the likelihood of severe
over-voltage transients due to the resulting high dv/dt.
APT Reserves the right to change, without notice, the specifications and information contained herein.
D = 0.9
0.25
0.7
0.5
0.15
Note:
0.10
0.3
t1
t2
0.05
0
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7239 Rev B
3-2006
0.30
0.20
0.1
SINGLE PULSE
0.05
10-5
10-4
°C/W
t
Duty Factor D = 1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
Typical Performance Curves
0.143
Power
(watts)
0.00717
0.233
0.120
0.00391
0.680
Case temperature. (°C)
15, 10 & 7V
6.5V
120
ID, DRAIN CURRENT (AMPERES)
RC MODEL
Junction
temp. (°C)
APT60N60B_SCS(G)
140
6V
100
80
5.5V
60
40
5V
20
4.5V
0
0
5
10
15
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
VDS> ID(ON) x RDS(ON) MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
160
140
120
100
80
TJ = -55°C
60
TJ = +25°C
40
TJ = +125°C
20
0
0
1
2
3
4
5
6
7
8
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
50
40
30
20
10
0
25
2.5
NORMALIZED TO
VGS = 10V @ 44A
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
1.15
0
20
40
60
80
100 120 140
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
1.10
1.05
1.00
0.95
0.90
-50
-25
0
25 50 75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.15
I = 44A
D
V
GS
= 10V
2.0
1.5
1.0
0.5
0
-50
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.10
1.05
1.00
0.95
0.90
0.85
0.80
0.75
0.70
-50
-25
0
25 50 75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
3-2006
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
1.40
050-7239 Rev B
ID, DRAIN CURRENT (AMPERES)
60
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
180
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
200
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100
100µS
10
5
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10mS
I = 44A
D
14
12
VDS=120V
10
VDS=300V
8
6
VDS=480V
4
2
0
50
100
150
200
250
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGE vs GATE-TO-SOURCE VOLTAGE
250
Ciss
103
Coss
102
101
1mS
1
10
100
600
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
C, CAPACITANCE (pF)
104
50
0
APT60N60B_SCS(G)
105
OPERATION HERE
LIMITED BY R
(ON)
DS
Crss
100
0
50
100
150
200
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
230
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
110
V
DD
100
90
td(off)
150
V
DD
R
G
= 400V
= 4.3Ω
T = 125°C
J
L = 100µH
100
70
tf
60
50
40
0
0
20
10
40
ID (A)
60
0
80
FIGURE 14, DELAY TIMES vs CURRENT
2000
V
DD
R
G
40
ID (A)
60
= 400V
Eon
1000
Eoff
500
SWITCHING ENERGY (µJ)
includes
diode reverse recovery.
2000
Eoff
1500
Eon
1000
V
DD
D
T = 125°C
500
J
L = 100µH
on
0
20
40
60
80
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
= 400V
I = 44A
E
0
80
= 4.3Ω
J
on
20
FIGURE 15, RISE AND FALL TIMES vs CURRENT
T = 125°C
E
0
2500
L = 100µH
1500
tr
20
td(on)
SWITCHING ENERGY (µJ)
= 400V
= 4.3Ω
30
50
3-2006
G
T = 125°C
J
L = 100µH
80
tr and tf (ns)
td(on) and td(off) (ns)
200
050-7239 Rev B
R
0
includes
diode reverse recovery.
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT60N60B_SCS(G)
90%
10%
Gate Voltage
td(on)
Gate Voltage
TJ125°C
td(off)
tr
TJ125°C
tf
Drain Current
Drain Voltage
90%
90%
5%
10%
10%
0
Drain Voltage
Drain Current
Switching Energy
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT60DQ60
VDD
ID
VDS
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
3
D PAK Package Outline
TO-247 Package Outline
e3 100% Sn
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
15.49 (.610)
16.26 (.640)
6.15 (.242) BSC
5.38 (.212)
6.20 (.244)
Drain
(Heat Sink)
e1 SAC: Tin, Silver, Copper
4.98 (.196)
5.08 (.200)
1.47 (.058)
1.57 (.062)
15.95 (.628)
16.05(.632)
Revised
4/18/95
Drain
20.80 (.819)
21.46 (.845)
1.04 (.041)
1.15(.045)
13.41 (.528)
13.51(.532)
13.79 (.543)
13.99(.551)
Revised
8/29/97
11.51 (.453)
11.61 (.457)
4.50 (.177) Max.
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
0.020 (.001)
0.178 (.007)
2.67 (.105)
2.84 (.112)
Gate
Drain
Source
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
1.27 (.050)
1.40 (.055)
1.22 (.048)
1.32 (.052)
1.98 (.078)
2.08 (.082)
5.45 (.215) BSC
{2 Plcs.}
Source
Drain
Gate
Dimensions in Millimeters (Inches)
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
3.81 (.150)
4.06 (.160)
(Base of Lead)
Heat Sink (Drain)
and Leads
are Plated
050-7239 Rev B
0.46 (.018)
0.56 (.022) {3 Plcs}
3-2006
3.50 (.138)
3.81 (.150)