APT34N80B2C3
APT34N80LC3
800V
34A 0.145Ω
Super Junction MOSFET
T-MAX™
COOLMOS
TO-264
Power Semiconductors
• Ultra low RDS(ON)
• Low Miller Capacitance
• Ultra Low Gate Charge, Qg
• Avalanche Energy Rated
• Popular T-MAX™ or TO-264 Package
D
G
S
Unless stated otherwise, Microsemi discrete MOSFETs contain a single MOSFET die. This device is made with
two parallel MOSFET die. It is intended for switch-mode operation. It is not suitable for linear mode operation.
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT34N80B2C3_LC3
UNIT
Drain-Source Voltage
800
Volts
ID
Continuous Drain Current @ TC = 25°C
34
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±20
VGSM
Gate-Source Voltage Transient
±30
Total Power Dissipation @ TC = 25°C
417
Watts
Linear Derating Factor
3.33
W/°C
VDSS
PD
TJ,TSTG
TL
dv/
dt
1
Amps
102
Volts
-55 to 150
Operating and Storage Junction Temperature Range
°C
Lead Temperature: 0.063" from Case for 10 Sec.
300
Drain-Source Voltage slope (VDS = 640V, ID = 34A, TJ = 125°C)
50
V/ns
Amps
IAR
Repetitive Avalanche Current
7
17
EAR
Repetitive Avalanche Energy
7
0.5
EAS
Single Pulse Avalanche Energy
4
mJ
670
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 500µA)
800
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 22A)
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V)
TYP
0.125
0.145
1.0
50
500
Gate-Source Leakage Current (VGS = ±20V, VDS = 0V)
2.10
UNIT
Volts
Zero Gate Voltage Drain Current (VDS = 800V, VGS = 0V, TJ = 150°C)
Gate Threshold Voltage (VDS = VGS, ID = 2mA)
MAX
3
Ohms
µA
±200
nA
3.9
Volts
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
Microsemi Website - http://www.microsemi.com
"COOLMOS™ comprise a new family of transistors developed by Infineon Technologies AG. "COOLMOS" is a trademark of Infineon Technologies AG"
6-2006
Characteristic / Test Conditions
050-7147 Rev F
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT34N80B2C3 _LC3
Test Conditions
Characteristic
MIN
TYP
C iss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
2050
C rss
Reverse Transfer Capacitance
f = 1 MHz
110
VGS = 10V
180
VDD = 400V
22
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
Turn-on Delay Time
tr
ID = 34A @ 25°C
tf
RG = 2.5Ω
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
INDUCTIVE SWITCHING @ 25°C
6
70
80
6
9
ns
675
VDD = 533V, VGS = 15V
6
nC
15
VDD = 400V
ID = 34A @ 125°C
Fall Time
355
25
VGS = 10V
Turn-off Delay Time
pF
90
RESISTIVE SWITCHING
Rise Time
td(off)
UNIT
4510
VGS = 0V
3
MAX
ID = 34A, RG = 5Ω
580
INDUCTIVE SWITCHING @ 125°C
1145
VDD = 533V, VGS = 15V
ID = 34A, RG = 5Ω
µJ
670
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
34
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -34A, dl S /dt = 100A/µs, VR = 400V)
855
ns
Q rr
Reverse Recovery Charge (IS = -34A, dl S /dt = 100A/µs, VR = 400V)
30
µC
dv/
Peak Diode Recovery
dt
dv/
102
(Body Diode)
1
(VGS = 0V, IS = -34A)
dt
1.2
Amps
Volts
6
V/ns
MAX
UNIT
5
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
TYP
RθJC
Junction to Case
.30
RθJA
Junction to Ambient
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 115.92mH, RG = 25Ω, Peak IL = 3.4A
5 IS = -34A di/dt = 100A/µs VR = 480V TJ = 125°C
6 Eon includes diode reverse recovery. See figures 18, 20.
7 Repetitve avalanche causes additional power losses that can be
calculated as PAV=EAR*f
Microsemi reserves the right to change, without notice, the specifications and information contained herein.
0.30
0.9
0.25
0.7
0.20
0.5
Note:
0.10
0.3
0.05
0.1
0
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7147 Rev F
6-2006
0.35
0.15
t1
t2
SINGLE PULSE
0.05
10-5
10-4
°C/W
Duty Factor D = t1/t2
Peak TJ = PDM x ZθJC + TC
10-3
10-2
10-1
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
1.0
Typical Performance Curves
TC ( C)
0.183
ZEXT
0.117
Dissipated Power
(Watts)
0.00828
0.174
ZEXT are the external thermal
impedances: Case to sink,
sink to ambient, etc. Set to
zero when modeling only
the case to junction.
ID, DRAIN CURRENT (AMPERES)
TJ ( C)
VDS> ID (ON) x RDS (ON)MAX.
250 µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
80
TJ = -55°C
70
60
50
40
30
TJ = +25°C
20
TJ = +125°C
5.5V
30
5V
20
4.5V
10
4V
0 1 2
3 4
5 6 7
8
9 10
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
1.40
NORMALIZED TO
V
= 10V @ 17A
GS
1.30
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
1.15
30
25
20
15
10
5
0
25
50
75
100
125
150
I
V
2.5
D
1.05
1.00
0.95
0.90
0.85
0.80
-50
0
50
100
150
= 17A
GS
= 10V
2.0
1.5
1.0
0.5
0
-50
1.10
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
1.2
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
3.0
60
FIGURE 5, RDS(ON) vs DRAIN CURRENT
FIGURE 4, TRANSFER CHARACTERISTICS
35
10
20
30
40
50
ID, DRAIN CURRENT (AMPERES)
-25
0
25
50
75
100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
1.1
1.0
0.9
0.8
6-2006
0
40
0.7
0.6
-50
-25
0
25
50
75
100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
050-7147 Rev F
10
6.5V
6V
0
2
4
6
8
10
12
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
ID, DRAIN CURRENT (AMPERES)
90
VGS =15 & 10V
0
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
100
APT34N80B2C3 _LC3
50
Typical Performance Curves
APT34N80B2C3 _LC3
20,000
10,000
Graph removed
C, CAPACITANCE (pF)
ID, DRAIN CURRENT (AMPERES)
Ciss
1000
Coss
100
Crss
10
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
I
D
= 34A
16
VDS= 160V
12
VDS= 400V
VDS= 640V
8
4
0
50
100
150
200
250
300
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
1800
160
IDR, REVERSE DRAIN CURRENT (AMPERES)
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
V
80
td(off)
120
V
DD
R
G
100
G
T = 125°C
J
60
td(on)
20
J
L = 100µH
50
40
30
0
10
tr
10
0
20
30
40
50
60
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
30
40
50
60
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
0
4000
2000
V
DD
R
G
= 5Ω
EON includes
diode reverse recovery.
1000
Eoff
Eon
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
L = 100µH
500
DD
= 533V
3500
I
3000
L = 100µH
EON includes
D
20
= 34A
Eoff
T = 125°C
J
J
1500
10
V
= 533V
T = 125°C
6-2006
tf
T = 125°C
20
40
050-7147 Rev F
= 5Ω
60
= 533V
= 5Ω
L = 100µH
80
= 533V
DD
R
70
tr and tf (ns)
td(on) and td(off) (ns)
100
90
140
0
200
diode reverse recovery.
2500
2000
Eon
1500
1000
500
0
0
10
20
30
40
50
60
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
APT34N80B2C3 _LC3
Gate Voltage
10 %
90%
Gate Voltage
t
T = 125 C
J
d(off)
td(on)
T = 125 C
J
90%
Drain Voltage
Drain Current
90%
5%
tr
t
f
5%
10%
Drain Voltage
10 %
0
Switching Energy
Drain Current
Switching Energy
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT15DF100
V CE
IC
V DD
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
T-MAXTM (B2) Package Outline
4.69 (.185)
5.31 (.209)
1.49 (.059)
2.49 (.098)
TO-264 (L) Package Outline
4.60 (.181)
5.21 (.205)
1.80 (.071)
2.01 (.079)
15.49 (.610)
16.26 (.640)
19.51 (.768)
20.50 (.807)
3.10 (.122)
3.48 (.137)
5.38 (.212)
6.20 (.244)
5.79 (.228)
6.20 (.244)
0.40 (.016)
0.79 (.031)
2.21 (.087)
2.59 (.102)
19.81 (.780)
20.32 (.800)
2.87 (.113)
3.12 (.123)
2.29 (.090)
2.69 (.106)
1.65 (.065)
2.13 (.084)
1.01 (.040)
1.40 (.055)
5.45 (.215) BSC
2-Plcs.
These dimensions are equal to the TO-247 without the mounting hole.
Dimensions in Millimeters and (Inches)
19.81 (.780)
21.39 (.842)
Gate
Drain
Source
0.48 (.019)
0.84 (.033)
2.59 (.102)
3.00 (.118)
0.76 (.030)
1.30 (.051)
2.79 (.110)
3.18 (.125)
5.45 (.215) BSC
2-Plcs.
Dimensions in Millimeters and (Inches)
Microsemi’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786
5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
2.29 (.090)
2.69 (.106)
Gate
Drain
Source
6-2006
4.50 (.177) Max.
25.48 (1.003)
26.49 (1.043)
050-7147 Rev F
Drain
Drain
20.80 (.819)
21.46 (.845)