APTGF50X120E3 3 Phase bridge NPT IGBT Power Module VCES = 1200V IC = 50A @ Tc = 80°C Application • AC Motor control Features Non Punch Through (NPT) IGBT® - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration • 19 17 • • • 15 Benefits 21 13 1 2 3 4 5 6 7 8 9 10 11 12 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation SCSOA Short Circuit Save Operating Area • • • • • • • Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile TC = 25°C Max ratings 1200 78 50 150 ±20 400 Tj = 125°C 500A@1200V TC = 25°C TC = 80°C TC = 25°C Unit V A V W July, 2003 14 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGF50X120E3 – Rev 0 20 APTGF50X120E3 ICES All ratings @ Tj = 25°C unless otherwise specified Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Coes Cres Td(on) Tr Td(off) Tf Characteristic Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Reverse diode ratings and characteristics Symbol Characteristic VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Test Conditions VGE = 0V, IC = 3mA Tj = 25°C VGE = 0V VCE = 1200V Tj = 125°C T j = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 2 mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V VCE = 25V f = 1MHz Test Conditions Tj = 25°C IF = 50A VGE = 0V Tj = 125°C IF = 50A VR = 600V Tj = 125°C di/dt =800A/µs IF = 50A Tj = 25°C VR = 600V di/dt =800A/µs Tj = 125°C TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink Package Weight Typ Max 0.8 4 2.5 3.1 1 4.5 Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 50A RG = 22Ω Symbol Characteristic VISOL 2.0 Min Thermal and package characteristics RthJC Min 1200 Typ 3300 500 220 44 V nA Max Unit ns Max 2.8 200 Typ Max 0.35 0.7 2500 M5 APT website – http://www.advancedpower.com -40 -40 -40 3 V µC 8 Min Unit ns 2.8 IGBT Diode V pF 380 70 Typ 2.3 1.8 mA 3.0 3.7 6.5 200 56 Min Unit V Unit °C/W V 150 125 125 4.5 300 °C July, 2003 Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage N.m g 2-3 APTGF50X120E3 – Rev 0 Electrical Characteristics APTGF50X120E3 Package outline PIN 1 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 3-3 APTGF50X120E3 – Rev 0 July, 2003 PIN 21