APTGS50X170TE3 3 Phase bridge NPT IGBT Power Module VCES = 1700V IC = 50A @ Tc = 80°C Application • AC Motor control Features Non Punch Through (NPT) Low Loss IGBT® - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated Kelvin emitter for easy drive Very low stray inductance High level of integration Internal thermistor for temperature monitoring • 19 18 • • • • 17 16 15 Benefits 21 13 1 2 3 4 5 6 7 8 9 10 11 12 Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Operating Area • • • • • • • Stable temperature behavior Very rugged Solderable terminals for easy PCB mounting Direct mounting to heatsink (isolated package) Low junction to case thermal resistance Easy paralleling due to positive TC of VCEsat Low profile TC = 25°C Max ratings 1700 100 50 150 ±20 480 Tj = 125°C 100A@1600V TC = 25°C TC = 80°C TC = 25°C Unit V A V W July, 2003 14 These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGS50X170TE3 – Rev 0 20 APTGS50X170TE3 ICES All ratings @ Tj = 25°C unless otherwise specified Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Characteristic Cies Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Test Conditions VGE = 0V, IC = 1mA Tj = 25°C VGE = 0V VCE = 1700V Tj = 125°C T j = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 2.5 mA VGE = 20V, VCE = 0V Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 50A RG = 30Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 50A RG = 30Ω Input Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Min Typ Max 0.02 1.5 2.7 3.2 0.1 1700 4.5 Min Typ 3.3 VF Diode Forward Voltage Er Reverse Recovery Energy Qrr Reverse Recovery Charge Test Conditions IF = 50A VGE = 0V IF = 50A VR = 900V di/dt =750A/µs IF = 50A VR = 900V di/dt =750A/µs Max Unit pF 100 100 800 ns 30 100 100 ns 900 30 Min Tj = 25°C Tj = 125°C Typ 2.2 2.0 Tj = 25°C 2 Tj = 125°C 4 Tj = 25°C 6 Tj = 125°C 12 Temperature sensor NTC Symbol Characteristic R25 Resistance @ 25°C B 25/50 T25 = 298.16 K RT = Min R25 exp B25 / 50 1 1 − T25 T V V nA 14.5 Symbol Characteristic mA 6.5 100 3500 Turn off Energy Reverse diode ratings and characteristics Unit V Typ 5 3375 mJ Max 2.6 Unit V mJ µC Max Unit kΩ K July, 2003 Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage T: Thermistor temperature RT: Thermistor value at T APT website – http://www.advancedpower.com 2-3 APTGS50X170TE3 – Rev 0 Electrical Characteristics APTGS50X170TE3 Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque To Heatsink Package Weight Min IGBT Diode Typ Max 0.26 0.56 2500 M5 -40 -40 -40 3 Unit °C/W V 150 125 125 4.5 300 °C N.m g Package outline PIN 1 ALL DIMENSIONS MARKED " * " ARE TOLERENCED AS : APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 3-3 APTGS50X170TE3 – Rev 0 July, 2003 PIN 21