APTGT200U120D4 Single switch ® Trench IGBT Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 1 3 5 2 2 1 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance - M6 connectors for power - M4 connectors for signal • High level of integration Benefits • Outstanding performance at high frequency operation • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Save Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C TJ = 125°C Max ratings 1200 300 200 400 ±20 1040 400A @ 1100V Unit V A January 2004 3 V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-3 APTGT200U120D4 – Rev 0, 4 5 VCES = 1200V IC = 200A @ Tc = 80°C APTGT200U120D4 All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Crss Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Tf Eoff Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn off Energy Test Conditions VGE = 0V, IC = 8mA VGE = 0V, VCE = 1200V Tj = 25°C VGE =15V IC = 200A Tj = 125°C VGE = VCE , IC = 8mA VGE = 20V, VCE = 0V Min 1200 Test Conditions VGE = 0V,VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A RG = 4.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A RG = 4.7Ω Min 1.4 5.0 Typ 1.7 2.0 5.8 Typ 14.4 0.65 150 90 550 Max 20 2.1 6.5 Unit V mA V 1200 V nA Max Unit nF ns 130 180 100 650 180 26 ns mJ Reverse diode ratings and characteristics Erec Reverse Recovery Energy Qrr Reverse Recovery Charge VGE = 0V IF = 200A IF = 200A VR = 600V di/dt =990A/µs IF = 200A VR = 600V di/dt=990A/µs Tj = 25°C Tj = 125°C 1.6 1.6 Tj = 125°C 16 Tj = 25°C Symbol Characteristic RthJC VISOL TJ TSTG TC Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight µC 38 Min IGBT Diode Typ Max 0.12 0.19 2500 M6 M4 APT website – http://www.advancedpower.com -40 -40 -40 3 1 V mJ 20.8 Tj = 125°C Thermal and package characteristics 2.2 Unit °C/W January 2004 Forward Voltage V 150 125 125 5 2 420 °C N.m g 2-3 APTGT200U120D4 – Rev 0, VF APTGT200U120D4 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 3-3 APTGT200U120D4 – Rev 0, January 2004 Package outline