ADPOW APTGT50TA170P

APTGT50TA170P
Triple phase leg
Trench IGBT® Power Module
VBUS2
VBUS3
G1
G3
G5
E1
U
G2
E2
0/VBUS1
E3
U
E5
W
G4
G6
E4
E6
0/VBUS2
0/VBUS3
VBUS 1
0/VBUS 1
V
VBUS 2
VBUS 3
G1
G3
E1
E3
0/VBUS 2
Application
• Welding converters
• Switched Mode Power Supplies
• Uninterruptible Power Supplies
• Motor control
G5
0/VBUS 3
E2
E4
E6
G2
G4
G6
V
W
Absolute maximum ratings
Symbol
VCES
IC
ICM
VGE
PD
RBSOA
E5
Features
• Trench + Field Stop IGBT® Technology
- Low voltage drop
- Low tail current
- Switching frequency up to 20 kHz
- Soft recovery parallel diodes
- Low diode VF
- Low leakage current
- Avalanche energy rated
- RBSOA and SCSOA rated
• Kelvin emitter for easy drive
• Very low stray inductance
- Symmetrical design
- Lead frames for power connections
• High level of integration
• Kelvin emitter for easy drive
Benefits
• Stable temperature behavior
• Very rugged
• Solderable terminals for easy PCB mounting
• Direct mounting to heatsink (isolated package)
• Low junction to case thermal resistance
• Easy paralleling due to positive TC of VCEsat
• Very low (12mm) profile
• Each leg can be easily paralleled to achieve a phase
leg of three times the current capability
• Module can be configured as a three phase bridge
• Module can be configured as a boost followed by a
full bridge
Parameter
Collector - Emitter Breakdown Voltage
Continuous Collector Current
Pulsed Collector Current
Gate – Emitter Voltage
Maximum Power Dissipation
Reverse Bias Save Operating Area
TC = 25°C
TC = 80°C
TC = 25°C
TC = 25°C
Tj = 125°C
Max ratings
1700
70
50
100
±20
310
100A @ 1600V
Unit
V
A
V
W
These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed
APT website – http://www.advancedpower.com
1-5
APTGT50TA170P – Rev 0, September, 2004
VBUS1
VCES = 1700V
IC = 50A @ Tc = 80°C
APTGT50TA170P
All ratings @ Tj = 25°C unless otherwise specified
Electrical Characteristics
Symbol Characteristic
BVCES Collector - Emitter Breakdown Voltage
ICES
Zero Gate Voltage Collector Current
VCE(on)
Collector Emitter on Voltage
VGE(th)
IGES
Gate Threshold Voltage
Gate – Emitter Leakage Current
Dynamic Characteristics
Symbol
Cies
Crss
Td(on)
Tr
Td(off)
Tf
Characteristic
Input Capacitance
Reverse Transfer Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Td(on)
Tr
Td(off)
Tf
Eon
Eoff
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
Turn-on Switching Energy X
Turn-off Switching Energy Y
Test Conditions
VGE = 0V, IC = 2.5mA
VGE = 0V, VCE = 1700V
Tj = 25°C
VGE =15V
IC = 50A
Tj = 125°C
VGE = VCE , IC = 2.5 mA
VGE = 20V, VCE = 0V
Min
Typ
Max
1700
5
2.0
2.4
5.0
Test Conditions
VGE = 0V ;VCE = 25V
f = 1MHz
Inductive Switching (25°C)
VGE = ±15V
VBus = 900V
IC = 50A
R G = 22Ω
Inductive Switching (125°C)
VGE = ±15V
VBus = 900V
IC = 50A
R G = 22Ω
Diode
Min
Test Conditions
Min
1700
Typ
4400
150
200
90
720
90
2.4
Unit
V
mA
V
6.5
600
V
nA
Max
Unit
pF
ns
220
90
820
110
29
22
ns
mJ
X Eon includes diode reverse recovery
Y In accordance with JEDEC standard JESD24-1
Symbol Characteristic
VRRM Maximum Peak Repetitive Reverse Voltage
IRM
Maximum Reverse Leakage Current
VF
Diode Forward Voltage
Qrr
Reverse Recovery Charge
VR=1700V
IF = 50A
VGE = 0V
IF = 50A
VR = 900V
di/dt =990A/µs
Typ
Tj = 25°C
Tj = 125°C
Tj = 25°C
Tj = 125°C
Tj = 25°C
1.8
1.9
19
Tj = 125°C
30
APT website – http://www.advancedpower.com
Max
250
500
2.2
Unit
V
µA
V
µC
2-5
APTGT50TA170P – Rev 0, September, 2004
Reverse diode ratings and characteristics
APTGT50TA170P
Thermal and package characteristics
Symbol Characteristic
RthJC
VISOL
TJ
TSTG
TC
Torque
Wt
Min
IGBT
Diode
Junction to Case
RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz
Operating junction temperature range
Storage Temperature Range
Operating Case Temperature
Mounting torque
Package Weight
To heatsink
M6
3500
-40
-40
-40
3
Typ
Max
0.4
0.7
Unit
°C/W
V
150
125
100
5
250
°C
N.m
g
Package outline
APT website – http://www.advancedpower.com
3-5
APTGT50TA170P – Rev 0, September, 2004
5 places (3:1)
APTGT50TA170P
Typical Performance Curve
Output Characteristics (VGE=15V)
Output Characteristics
100
125
T J = 125°C
100
75
75
IC (A)
IC (A)
T J=25°C
TJ=125°C
50
VGE=15V
50
V GE=13V
25
25
0
VGE=9V
0
0
0.5
1
1.5 2 2.5
VCE (V)
3
3.5
4
0
1
2
3
VCE (V)
4
5
Energy losses vs Collector Current
Transfert Characteristics
125
100
100
VCE = 900V
VGE = 15V
RG = 22 Ω
T J = 125°C
80
TJ =25°C
75
E (mJ)
IC (A)
VGE =17V
50
60
Eon
Eoff
40
T J=125°C
20
25
0
0
5
6
7
8
9
10
0
11
25
Switching Energy Losses vs Gate Resistance
100
125
120
VCE = 900V
VGE =15V
IC = 50A
TJ = 125°C
80
IC (A)
75
100
Eon
50
Eoff
60
40
25
20
0
0
0
20
40
60
Gate Resistance (ohms)
0.4
0.3
0.25
0.2
0.15
0
80
400
800
1200
1600
V CE (V)
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
0.45
0.35
V GE=15V
T J=125°C
RG=22 Ω
IGBT
0.9
0.7
0.5
0.3
0.1
0.05
0
0.00001
0.1
0.05
Single Pulse
0.0001
0.001
0.01
0.1
1
10
rectangular Pulse Duration (Seconds)
APT website – http://www.advancedpower.com
4-5
APTGT50TA170P – Rev 0, September, 2004
100
E (mJ)
75
Reverse Safe Operating Area
125
Thermal Impedance (°C/W)
50
IC (A)
V GE (V)
APTGT50TA170P
Forward Characteristic of diode
100
VCE=900V
D=50%
RG=22 Ω
TJ =125°C
TC=75°C
ZVS
40
30
20
10
TJ=25°C
75
IC (A)
Fmax, Operating Frequency (kHz)
Operating Frequency vs Collector Current
50
50
TJ=125°C
ZCS
25
hard
switching
0
0
0
20
40
IC (A)
60
0
80
0.5
1
1.5
VF (V)
2
2.5
3
maximum Effective Transient Thermal Impedance, Junction to Pulse Duration
Thermal Impedance (°C/W)
0.8
0.7
Diode
0.9
0.6
0.5
0.4
0.3
0.7
0.5
0.3
0.2
0.1
0.1
Single Pulse
0.05
0
0.00001
0.0001
0.001
0.01
0.1
1
10
APT reserves the right to change, without notice, the specifications and information contained herein
APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved.
APT website – http://www.advancedpower.com
5-5
APTGT50TA170P – Rev 0, September, 2004
rectangular Pulse Duration (Seconds)