APTGT50TA170P Triple phase leg Trench IGBT® Power Module VBUS2 VBUS3 G1 G3 G5 E1 U G2 E2 0/VBUS1 E3 U E5 W G4 G6 E4 E6 0/VBUS2 0/VBUS3 VBUS 1 0/VBUS 1 V VBUS 2 VBUS 3 G1 G3 E1 E3 0/VBUS 2 Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control G5 0/VBUS 3 E2 E4 E6 G2 G4 G6 V W Absolute maximum ratings Symbol VCES IC ICM VGE PD RBSOA E5 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Very low stray inductance - Symmetrical design - Lead frames for power connections • High level of integration • Kelvin emitter for easy drive Benefits • Stable temperature behavior • Very rugged • Solderable terminals for easy PCB mounting • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • Very low (12mm) profile • Each leg can be easily paralleled to achieve a phase leg of three times the current capability • Module can be configured as a three phase bridge • Module can be configured as a boost followed by a full bridge Parameter Collector - Emitter Breakdown Voltage Continuous Collector Current Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation Reverse Bias Save Operating Area TC = 25°C TC = 80°C TC = 25°C TC = 25°C Tj = 125°C Max ratings 1700 70 50 100 ±20 310 100A @ 1600V Unit V A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed APT website – http://www.advancedpower.com 1-5 APTGT50TA170P – Rev 0, September, 2004 VBUS1 VCES = 1700V IC = 50A @ Tc = 80°C APTGT50TA170P All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic BVCES Collector - Emitter Breakdown Voltage ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Crss Td(on) Tr Td(off) Tf Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Td(on) Tr Td(off) Tf Eon Eoff Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Switching Energy X Turn-off Switching Energy Y Test Conditions VGE = 0V, IC = 2.5mA VGE = 0V, VCE = 1700V Tj = 25°C VGE =15V IC = 50A Tj = 125°C VGE = VCE , IC = 2.5 mA VGE = 20V, VCE = 0V Min Typ Max 1700 5 2.0 2.4 5.0 Test Conditions VGE = 0V ;VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 50A R G = 22Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 50A R G = 22Ω Diode Min Test Conditions Min 1700 Typ 4400 150 200 90 720 90 2.4 Unit V mA V 6.5 600 V nA Max Unit pF ns 220 90 820 110 29 22 ns mJ X Eon includes diode reverse recovery Y In accordance with JEDEC standard JESD24-1 Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM Maximum Reverse Leakage Current VF Diode Forward Voltage Qrr Reverse Recovery Charge VR=1700V IF = 50A VGE = 0V IF = 50A VR = 900V di/dt =990A/µs Typ Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C 1.8 1.9 19 Tj = 125°C 30 APT website – http://www.advancedpower.com Max 250 500 2.2 Unit V µA V µC 2-5 APTGT50TA170P – Rev 0, September, 2004 Reverse diode ratings and characteristics APTGT50TA170P Thermal and package characteristics Symbol Characteristic RthJC VISOL TJ TSTG TC Torque Wt Min IGBT Diode Junction to Case RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Mounting torque Package Weight To heatsink M6 3500 -40 -40 -40 3 Typ Max 0.4 0.7 Unit °C/W V 150 125 100 5 250 °C N.m g Package outline APT website – http://www.advancedpower.com 3-5 APTGT50TA170P – Rev 0, September, 2004 5 places (3:1) APTGT50TA170P Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 100 125 T J = 125°C 100 75 75 IC (A) IC (A) T J=25°C TJ=125°C 50 VGE=15V 50 V GE=13V 25 25 0 VGE=9V 0 0 0.5 1 1.5 2 2.5 VCE (V) 3 3.5 4 0 1 2 3 VCE (V) 4 5 Energy losses vs Collector Current Transfert Characteristics 125 100 100 VCE = 900V VGE = 15V RG = 22 Ω T J = 125°C 80 TJ =25°C 75 E (mJ) IC (A) VGE =17V 50 60 Eon Eoff 40 T J=125°C 20 25 0 0 5 6 7 8 9 10 0 11 25 Switching Energy Losses vs Gate Resistance 100 125 120 VCE = 900V VGE =15V IC = 50A TJ = 125°C 80 IC (A) 75 100 Eon 50 Eoff 60 40 25 20 0 0 0 20 40 60 Gate Resistance (ohms) 0.4 0.3 0.25 0.2 0.15 0 80 400 800 1200 1600 V CE (V) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.45 0.35 V GE=15V T J=125°C RG=22 Ω IGBT 0.9 0.7 0.5 0.3 0.1 0.05 0 0.00001 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) APT website – http://www.advancedpower.com 4-5 APTGT50TA170P – Rev 0, September, 2004 100 E (mJ) 75 Reverse Safe Operating Area 125 Thermal Impedance (°C/W) 50 IC (A) V GE (V) APTGT50TA170P Forward Characteristic of diode 100 VCE=900V D=50% RG=22 Ω TJ =125°C TC=75°C ZVS 40 30 20 10 TJ=25°C 75 IC (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 50 50 TJ=125°C ZCS 25 hard switching 0 0 0 20 40 IC (A) 60 0 80 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 0.8 0.7 Diode 0.9 0.6 0.5 0.4 0.3 0.7 0.5 0.3 0.2 0.1 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGT50TA170P – Rev 0, September, 2004 rectangular Pulse Duration (Seconds)