APTGT400U170D4G Single switch Trench + Field Stop IGBT® Power Module Application • Welding converters • Switched Mode Power Supplies • Uninterruptible Power Supplies • Motor control 1 3 5 2 2 1 4 Features • Trench + Field Stop IGBT® Technology - Low voltage drop - Low tail current - Switching frequency up to 20 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - Avalanche energy rated - RBSOA and SCSOA rated • Kelvin emitter for easy drive • Low stray inductance • High level of integration • Kelvin emitter for easy drive • Low stray inductance - M6 connectors for power - M4 connectors for signal Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings Symbol VCES Parameter Collector - Emitter Breakdown Voltage IC Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation RBSOA Reverse Bias Safe Operation Area TC = 25°C Max ratings 1700 800 400 800 ±20 2080 Tj = 125°C 800A@1650V TC = 25°C TC = 80°C TC = 25°C Unit V March, 2006 3 A V W These Devices are sensitive to Electrostatic Discharge. Proper Handing Procedures Should Be Followed. APT website – http://www.advancedpower.com 1-5 APTGT400U170D4G – Rev 1 5 VCES = 1700V IC = 400A @ Tc = 80°C APTGT400U170D4G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics ICES Zero Gate Voltage Collector Current VCE(sat) Collector Emitter saturation Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Dynamic Characteristics Symbol Cies Cres Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Characteristic Input Capacitance Reverse Transfer Capacitance Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn On Energy Eoff Turn Off Energy Reverse diode ratings and characteristics Symbol Characteristic VRRM Maximum Peak Repetitive Reverse Voltage IRM IF Maximum Reverse Leakage Current VGE = 0V, VCE = 1700V Tj = 25°C VGE = 15V IC = 400A Tj = 125°C VGE = VCE , IC = 16 mA VGE = 20V, VCE = 0V Diode Forward Voltage Er Reverse Recovery Energy trr Reverse Recovery Time Min Test Conditions Min 1700 VR=1700V IF = 400A VGE = 0V IF = 400A VR = 900V di/dt =4200A/µs Qrr Reverse Recovery Charge 5.2 Test Conditions VGE = 0V, VCE = 25V f = 1MHz Inductive Switching (25°C) VGE = ±15V VBus = 900V IC = 400A R G = 3.6Ω Inductive Switching (125°C) VGE = ±15V VBus = 900V IC = 400A R G = 3.6Ω VGE = ±15V Tj = 125°C VBus = 900V IC = 400A Tj = 125°C R G = 3.6Ω DC forward current VF Min Tj = 25°C Tj = 125°C Tc=80°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C APT website – http://www.advancedpower.com Typ 2.0 2.4 5.8 Typ 33 1.2 250 100 850 Max Unit 1 2.4 mA 6.4 400 V nA Max Unit V nF ns 120 300 100 1000 ns 200 150 mJ 125 Typ Max 750 1000 400 1.8 1.9 50 100 420 525 100 170 Unit V µA A 2.2 V mJ ns µC March, 2006 Test Conditions 2-5 APTGT400U170D4G – Rev 1 Symbol Characteristic APTGT400U170D4G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight M6 M4 3500 -40 -40 -40 3 1 Typ Max 0.06 0.09 Unit °C/W V 150 125 125 5 2 420 °C N.m g APT website – http://www.advancedpower.com 3-5 APTGT400U170D4G – Rev 1 March, 2006 D4 Package outline (dimensions in mm) APTGT400U170D4G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 800 800 700 500 IC (A) IC (A) VGE=20V 600 600 TJ =125°C 400 500 VGE =13V 400 300 300 200 200 100 100 0 VGE =15V V GE=9V 0 0 0.5 1 1.5 2 2.5 V CE (V) 3 3.5 4 0 1 2 3 VCE (V) 4 5 Energy losses vs Collector Current Transfert Characteristics 800 500 VCE = 900V VGE = 15V RG = 3.6Ω T J = 125°C T J=25°C 700 400 600 E (mJ) 500 IC (A) T J = 125°C 700 T J=25°C T J=125°C 400 300 TJ=125°C 200 300 Eon Eoff 200 100 Er 100 0 0 5 6 7 8 9 10 0 11 100 200 300 400 500 600 700 800 IC (A) VGE (V) Switching Energy Losses vs Gate Resistance Reverse Bias Safe Operating Area 500 1000 VCE = 900V VGE =15V IC = 400A TJ = 125°C 200 Eoff 400 VGE =15V TJ =125°C RG=3.6Ω 200 100 Er 0 0 5 10 15 20 Gate Resistance (ohms) 0.05 400 800 1200 1600 2000 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Pulse Duration 0.07 0.06 0 25 IGBT 0.9 March, 2006 0 Thermal Impedance (°C/W) 600 0.7 0.04 0.03 0.02 0.01 0 0.00001 0.5 0.3 0.1 0.05 Single Pulse 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) APT website – http://www.advancedpower.com 4-5 APTGT400U170D4G – Rev 1 300 800 Eon IC (A) E (mJ) 400 APTGT400U170D4G Forward Characteristic of diode 800 20 ZVS 15 VCE=900V D=50% RG =3.6 Ω TJ=125°C TC=75°C 700 500 ZCS 10 T J=25°C 600 IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 25 400 T J=125°C 300 TJ =125°C 200 5 hard switching 100 0 0 0 100 200 300 IC (A) 400 500 600 0 0.5 1 1.5 V F (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Pulse Duration Thermal Impedance (°C/W) 0.1 0.08 0.9 Diode 0.7 0.06 0.5 0.04 0.02 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 APT reserves the right to change, without notice, the specifications and information contained herein APT's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. APT website – http://www.advancedpower.com 5-5 APTGT400U170D4G – Rev 1 March, 2006 rectangular Pulse Duration (Seconds)