GaAlAs High Power IR LED Emitters PDI-E825 Advanced Photonix, Inc. PACKAGE DIMENSIONS INCH [mm] CL 0.145 [3.68] 45° 0.040 [1.02] 1.00 [25.4] MIN CL 0.222 [5.64] Ø0.019 [0.48] Ø0.016 [0.41] CL 0.100 [2.54] Ø0.230 [5.84] CATHODE CL ANODE AND CASE L.E.D. Ø0.255 [6.48] 0.015 [0.38] SQ PLASTIC LENS CAP HEADER 0.043 [1.09] 0.040 [1.02] Ø0.004 [0.10] EMITTER AREA CATHODE BOTTOM SIDE ANODE TO-46 PACKAGE CHIP DIMENSIONS INCH [mm] FEATURES DESCRIPTION • High speed • High reliability • Point source emission APPLICATIONS The PDI-E825 is a high power 850 nm GaAlAs point source infrared emitter packaged in a TO-46 metal header with a clear plastic lens cap. • Fiber optic source • Infrared sources • Optical readers ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL PARAMETER MIN MAX UNITS Pd Power Dissipation 200 mW If Continuous Forward Current 100 mA Ip Peak Forward Current 2.5 A Vr Reverse Voltage 2 V TSTG Storage Temperature -55 +125 TO Operating Temperature -55 +125 °C °C TS Soldering Temperature* +240 °C RADIATION PATTERN Relative Power Output (%) 100 80 60 40 20 0 -20 -15 -10 -5 0 5 10 15 20 Beam Angle (deg) * 1/16 inch from case for 3 seconds max. ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL Po Vf Vr lp Δl Ct tr tf CHARACTERISTIC Output Power Forward Voltage Reverse Breakdown Voltage Peak Wavelength TEST CONDITIONS If = 100 mA If = 100 mA If = 10 μA If = 20 mA Spectral Bandwidth @ 50% (FWHM) If = 20 mA Terminal Capacitance Vr = 0V, f = 1MHz Rise Time If = 20 mA Fall Time If = 20 mA MIN 2.2 2.0 830 TYP 2.7 1.7 850 35 68 15 15 MAX 2.2 870 UNITS mW V V nm nm pF nS nS Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. © 2007 Advanced Photonix, Inc. All rights reserved. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com REV 5/24/07