GaAlAs High power IR LED Emitters (660nm/880nm) PDI-E838 .063 [1.60] .167 [4.24] C L .104 [2.64] C L PACKAGE DIMENSIONS INCH [mm] .055 [1.40] RED L.E.D. CHIP .025 [0.64] I.R. L.E.D. CHIP .060 [1.52] CL METALIZED CERAMIC WIRE BONDS .250 [6.35] ENCAPSOLATE CONTACT B CONTACT A Metalized Ceramic Package FEATURES DESCRIPTION APPLICATIONS • Low Cost • 660 nm +/- 3nm • 2 drive line The PDI-E838 is a two drive line dual emitter oximeter component. The 660 and 880 nm GaAlAs infrared emitters are mounted in a glob toped low cost ceramic SMT package. The LEDs are bias separately by alternating polarity on the bias pins. • Oximeter Probes • Finger Clamps • Reusable probes ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL PARAMETER MIN MAX UNITS Pd Power Dissipation 250 mW If Continuous Forward Current 30 mA Ip Peak Forward Current 200 mA Vr Reverse Voltage 4 V TSTG Storage Temperature -40 +80 TO Operating Temperature -40 +80 °C °C TS Soldering Temperature* +240 °C SCHEMATIC A 880 nm LED 660 nm LED B * 1/16 inch from case for 3 seconds max. ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C UNLESS OTHERWISE NOTED SYMBOL Po Iv Vf Vr lp Δl tr tf CHARACTERISTIC TEST CONDITIONS Radiant Flux Luminous Intensity Forward Voltage Reverse Breakdown Voltage Peak Wavelength Spectral Halfwidth Rise Time Fall Time If = 20 mA If= 20 mA If = 20 mA If = 10 μA If = 20 mA If = 20 mA If = 20 mA If = 20 mA MIN 1.8 20 5 658 660 nm TYP MAX 2.4 30 1.8 2.4 661 21 0.1 0.04 664 MIN 1.2 5 870 880 nm TYP MAX 1.8 1.2 1.7 880 50 0.8 0.8 890 UNITS Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805) 484-9935 • www.advancedphotonix.com mW mcd V V nm nm uS uS