ADVANCEDPHOTONIX SD012-70-62-541

Small Area Silicon Avalanche Photodiode
SD 012-70-62-541
PACKAGE DIMENSIONS INCH / mm
PACKAGE DIMENSIONS INCH / mm
TO-5 PACKAGE
TO-46 PACKAGE
CHIP DIMENSIONS INCH [mm]
CHIP DIMENSIONS INCH [mm]
DESCRIPTION
APPLICATIONS
The SD 012-70-62-541 is a 0.3 mm diameter
small area silicon avalanche photodiode (APD)
that provides high gain and low noise, packaged
in a hermetic TO-46 metal can with a flat window.
• Military
• Industrial
• Medical
SPECTRAL
SPECTRAL
RESPONSE
RESPONSE
M = 100
ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED
+240
°C
50
40
40
30
30
20
R
10
* 1/16 inch from case for 3 seconds max.
20
QE
10
0
Wavelength (nm)
ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C and gain of 100 at 820nm UNLESS OTHERWISE NOTED
SYMBOL
ID
CJ
IN
lrange
R
Vop
tr
CHARACTERISTIC
TEST CONDITIONS
Dark Current
Junction Capacitance
f = 1 MHz
Noise Current Spectral Density f = 100 kHz
Spectral Application Range
Spot Scan
l= 660nm, VR = 0 V
Responsivity
l= 830nm, VR = 0 V
Operating voltage
RL = 50 Ω, l= 675nm
Response Time**
MIN
TYP
MAX
2
10
2.5
0.12
400
1100
30
47
130
0 .7
UNITS
nA
pF
pA/√Hz
nm
A/W
280
1
V
nS
**Response time of 10% to 90% is specified at 820nm wavelength light.
Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are
subject to change without notice.
(TA)= 23°C and Gain = 100 at 830nm UNLESS OTHERWISE
ELECTRO-OPTICAL CHARACTERISTICS RATING
SYMBOL
CHARACTERISTIC
TEST
CONDITIONS
TYP
MAX
UNITS
Advanced
Photonix Inc.
1240 Avenida Acaso, Camarillo CA 93012
• Phone
(805) 987-0146 • Fax (805)MIN
484-9935 • www.advancedphotonix.com
REV 8/22/06
1100
700
650
400
0
1050
Soldering Temperature*
+55
60
50
1000
TS
-40
°C
°C
70
60
950
Operating Temperature
+85
80
70
900
TO
-40
V
80
850
Storage Temperature
280
UNITS
800
TSTG
130
MAX
750
Reverse Voltage
MIN
600
VBR
PARAMETER
Responsivity (A/W)
SYMBOL
550
Low noise
Small size
High Speed
Low cost
500
•
•
•
•
450
FEATURES