Small Area Silicon Avalanche Photodiode SD 012-70-62-541 PACKAGE DIMENSIONS INCH / mm PACKAGE DIMENSIONS INCH / mm TO-5 PACKAGE TO-46 PACKAGE CHIP DIMENSIONS INCH [mm] CHIP DIMENSIONS INCH [mm] DESCRIPTION APPLICATIONS The SD 012-70-62-541 is a 0.3 mm diameter small area silicon avalanche photodiode (APD) that provides high gain and low noise, packaged in a hermetic TO-46 metal can with a flat window. • Military • Industrial • Medical SPECTRAL SPECTRAL RESPONSE RESPONSE M = 100 ABSOLUTE MAXIMUM RATING (TA)= 23°C UNLESS OTHERWISE NOTED +240 °C 50 40 40 30 30 20 R 10 * 1/16 inch from case for 3 seconds max. 20 QE 10 0 Wavelength (nm) ELECTRO-OPTICAL CHARACTERISTICS RATING (TA)= 23°C and gain of 100 at 820nm UNLESS OTHERWISE NOTED SYMBOL ID CJ IN lrange R Vop tr CHARACTERISTIC TEST CONDITIONS Dark Current Junction Capacitance f = 1 MHz Noise Current Spectral Density f = 100 kHz Spectral Application Range Spot Scan l= 660nm, VR = 0 V Responsivity l= 830nm, VR = 0 V Operating voltage RL = 50 Ω, l= 675nm Response Time** MIN TYP MAX 2 10 2.5 0.12 400 1100 30 47 130 0 .7 UNITS nA pF pA/√Hz nm A/W 280 1 V nS **Response time of 10% to 90% is specified at 820nm wavelength light. Information in this technical datasheet is believed to be correct and reliable. However, no responsibility is assumed for possible inaccuracies or omission. Specifications are subject to change without notice. (TA)= 23°C and Gain = 100 at 830nm UNLESS OTHERWISE ELECTRO-OPTICAL CHARACTERISTICS RATING SYMBOL CHARACTERISTIC TEST CONDITIONS TYP MAX UNITS Advanced Photonix Inc. 1240 Avenida Acaso, Camarillo CA 93012 • Phone (805) 987-0146 • Fax (805)MIN 484-9935 • www.advancedphotonix.com REV 8/22/06 1100 700 650 400 0 1050 Soldering Temperature* +55 60 50 1000 TS -40 °C °C 70 60 950 Operating Temperature +85 80 70 900 TO -40 V 80 850 Storage Temperature 280 UNITS 800 TSTG 130 MAX 750 Reverse Voltage MIN 600 VBR PARAMETER Responsivity (A/W) SYMBOL 550 Low noise Small size High Speed Low cost 500 • • • • 450 FEATURES