1214-110V R1 1214-110V 110 Watts - 50 Volts, 330µs, 10% Radar 1200 - 1400 MHz GENERAL DESCRIPTION The 1214-110V is an internally matched, COMMON BASE transistor capable of providing 110 Watts of pulsed RF output power at 330 µs pulse width, 10% duty factor across the band 1200 to 1400 MHz. This hermetically solder-sealed transistor is specifically designed for L-Band radar applications. It utilizes gold metallization and diffused emitter ballasting to provide high reliability and supreme ruggedness. CASE OUTLINE 55KT, STYLE 1 ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation @ 25oC 270 Watts Maximum Voltage and Current BVces Collector to Emitter Voltage BVebo Emitter to Base Voltage Ic Collector Current Maximum Temperatures Storage Temperature Operating Junction Temperature 75 Volts 3.0 Volts 8 Amps - 65 to + 200oC + 200oC ELECTRICAL CHARACTERISTICS @ 25 OC SYMBOL CHARACTERISTICS Pout Pg ηc Rl Droop Flatness VSWR-S VSWR-T Power Out Power Gain Collector Efficiency Input Return loss Droop Flatness TEST CONDITIONS MIN Freq = 1200 – 1400 MHz Vcc = 50 Volts Pin = 20 Watts 110 7.4 50 10 Pulse Width = 330µs Duty Factor = 10% Load Mismatch Stability Load Mismatch Tolerance TYP MAX UNITS 160 Watts dB % dB dB dB 55 0.5 1.0 1.5:1 3.0:1 FUNCTIONAL CHARACTERISTICS @ 25°°C Bvces Ices θjc1 Collector to Emitter Breakdown Collector to Emitter Leakage Thermal Resistance Ic = 100 mA Vce = 50 Volts Rated Pulse Condition 75 10 0.5 Volts mA o C/W MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT. Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324 1214-110V R1 1214-110V Performance Curves 1214-110V Pin vs. Efficency 1214-110V Pin vs. Pout 70.0 200 180 60.0 160 Pout (W) 120 1200 MHz 100 1300 MHz 1400 Mhz 80 60 Efficiency (%) 50.0 140 40.0 1200 MHz 1300 MHz 30.0 1400 MHz 20.0 40 10.0 20 0.0 0 0 5 10 15 20 25 30 0 35 5 10 15 20 25 30 Pin (W) Pin (W) 1214-110V Pin vs. Gain 12.0 10.0 Gain (dB) 8.0 1200 MHz 6.0 1300 MHz 1400 MHz 4.0 2.0 0.0 0 5 10 15 20 25 30 35 Pin (W) Impedance Information Frequencies (MHz) Note 2: Z Load 1200 1300 1400 exclusive of bias circuit Z Source (Ω) Z Load (Ω) 2 3.36-j3.12 3.5-j2.4 3.81-j1.3 4.97+j0.15 5.33-j2.86 2.88-j3.86 MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT. Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324 35 1214-110V R1 1214-110V Test Circuit MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT. Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324 1214-110V R1 1214-110V MICROSEMI CORP. RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW. MICROSEMI.COM OR CONTACT OUR FACTORY DIRECT. Microsemi Corp. 3000 Oakmead Village Drive, Santa Clara, CA 95051-0808 Tel. 408 / 986-8031 Fax 408 /869-2324