3134-100R1 3134-100 100 Watts, 36 Volts, 100µs, 10% Radar 3100-3400 MHz GENERAL DESCRIPTION CASE OUTLINE 55KS-1 Common Base The 3134-100 is an internally matched, COMMON BASE bipolar transistor capable of providing 100 Watts of pulsed RF output power at 100µõ s pulse width, 10% duty factor across the 3100 to 3400 MHz band. This hermetically solder-sealed transistor is specifically designed for S-band radar applications. It utilizes gold metallization and emitter ballasting to provide high reliability and supreme ruggedness. ABSOLUTE MAXIMUM RATINGS Maximum Power Dissipation Device Dissipation @ 25°C1 570 W Maximum Voltage and Current Collector to Base Voltage (BVces) 65 Emitter to Base Voltage (BVebo) 3.0 Collector Current (Ic) 17 A Maximum Temperatures Storage Temperature -65 to +200 Operating Junction Temperature +200 V V °C °C ELECTRICAL CHARACTERISTICS @ 25°C SYMBOL CHARACTERISTICS TEST CONDITIONS MIN Pout Gain ηc Droop IRL VSWR-S VSWR-T Power Output Power Gain Collector Efficiency Droop Input Return Loss Stability Survivability F=3100-3400 MHz Vcc = 36V Pulse Width = 100 us Duty Cycle = 10% Pin = 16W 100 8.0 40 TYP MAX UNITS 135 9.3 W 0.5 -7 % dB dB 1.5:1 2.0:1 FUNCTIONAL CHARACTERISTICS @ 25°C SYMBOL CHARACTERISTICS TEST CONDITIONS BVebo BVces Ices θjc Tstg Emitter to Base Breakdown Collector to Emitter Breakdown Collector to Emitter Leakage Thermal Resistance Storage Temperature Ie = 30 mA Ic = 120 mA Vce = 36 V MIN TYP MAX 3.0 65 -65 7 0.35 200 UNITS V V mA °C/W °C MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. 3134-100R1 3134 – 100 Typical Dynamic Range Data Vcc = 36 Volts, Pulse Width = 100µs, Duty = 10 % 3 1 3 4 - 1 0 0 P in v s . P o u t V cc=36V , 100u s 10% 1 6 0 .0 0 1 4 0 .0 0 1 2 0 .0 0 1 0 0 .0 0 Pout (W) 3 .1 G H z 3 .2 G H z 8 0 .0 0 3 .3 G H z 3 .4 G H z 6 0 .0 0 4 0 .0 0 2 0 .0 0 0 .0 0 0 .0 0 2 .0 0 4 .0 0 6 .0 0 8 .0 0 1 0 .0 0 1 2 .0 0 1 4 .0 0 1 6 .0 0 1 8 .0 0 2 0 .0 0 P in ( W ) 3 1 3 4 - 1 0 0 P o u t vs . Ga in V c c=3 6 V , 1 0 0 us 10 % 1 0 .0 0 8 .0 0 Gain (dB) 6 .0 0 3 .1 G H z 3 .2 G H z 4 .0 0 3 .3 G H z 3 .4 G H z 2 .0 0 0 .0 0 0 .0 0 2 0 .0 0 4 0 .0 0 6 0 .0 0 8 0 .0 0 1 0 0 .0 0 1 2 0 .0 0 1 4 0 .0 0 - 2 .0 0 Po u t (W ) MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. 3134-100R1 3134 – 100 Input and Output Impedance Input Matching Network Output Matching Network Zin Zout Typical Impedance Values Frequency (MHz) 3100 3200 3300 3400 Zin(?”) 4.79 - j0.44 5.05 - j0.38 5.29 - j0.37 5.50 - j0.39 Zout(?”) 5.51 – j5.76 5.10 – j5.68 4.75 – j5.55 4.47 – j5.38 * Vcc = 36V, Pout = 100W min * Pulse Format: 100 uS 10% MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. 3134-100R1 3134 – 100 Broadband Test Circuit PCB Material: Rogers RT6010, Er 10.2, 25mil Designation M1 M2 M3 M4 M5 M6 M7 M8 M9 M10 M11 M12 M13 Circuit Dimensions W (mil) L (mil) 22 112 103 68 22 115 266 113 78 62 35 345 400 160 450 150 86 188 255 84 22 135 99 83 22 245 Designation C1 C2 C3 C4 R1 L1 Component List Value 2200 uF 100 pF 10000 pF 10 pF 8.2 ohms 20 AWG wire Size Electrolytic ATC B ATC B ATC A 1206 400 mil MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY. 3134-100R1 3134 – 100 MICROSEMI RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE. TO VERIFY THE CURRENT VERSION PLEASE CHECK OUR WEB SITE AT WWW.MICROSEMI.COM OR CONTACT OUR FACTORY DIRECTLY.