AWT6307R HELP TM Cellular CDMA 3.4 V/28 dBm Linear Power Amplifier Module PRELIMINARY DATA SHEET - Rev 1.0 FEATURES • InGaP HBT Technology • High Efficiency: 21 % @ +16 dBm output 40 % @ +28 dBm output • Low Quiescent Current: 16 mA • Low Leakage Current in Shutdown Mode: <1 µA • Internal Voltage Regulation • Optimized for a 50 Ω System • Low Profile Surface Mount Package: 1 mm • CDMA 1XRTT, 1xEV-DO Compliant • Pinout Enables Easy Phone Board Migration From 4 mm x 4 mm Package • RoHS Compliant Package, 250 oC MSL-3 AW T63 07 R M9 Package 8 Pin 3 mm x 3 mm x 1 mm Surface Mount Module APPLICATIONS • CDMA Wireless Handsets and Data Devices PRODUCT DESCRIPTION The AWT6307R meets the increasing demands for higher efficiency and smaller footprint in CDMA 1X handsets. The package pinout was chosen to enable handset manufacturers to switch from a 4 mm x 4 mm PA module with few layout changes while reducing board area requirements by 44 %. The AWT6307R uses ANADIGICS’ exclusive InGaPPlus™ technology, which combines HBT and pHEMT devices on the same die, to enable stateof-the-art reliability, temperature stability, and ruggedness. The AWT6307R is part of ANADIGICS’ High-Efficiency-at-Low-Power (HELP™) family of CDMA power amplifiers, which deliver low quiescent currents and significantly greater efficiency without a costly external DAC or DC-DC converter. Through selectable bias modes, the AWT6307 achieves optimal efficiency across different output power levels, specifically at low- and mid-range power levels where the PA typically operates, thereby dramatically increasing handset talk-time and standby-time. Its built-in voltage regulator eliminates the need for external voltage regulation components. The 3 mm x 3 mm x 1 mm surface mount package incorporates matching networks optimized for output power, efficiency and linearity in a 50 Ω system. 03/2006 GND at slug (pad) VEN 8 GND VMODE 2 7 RFOUT RFIN 3 6 GND VBATT 4 5 VCC 1 Bias Control Figure 1: Block Diagram AWT6307R GND VEN 1 8 GND VMODE 2 7 RFOUT RFIN 3 6 GND VBATT 4 5 VCC GND Figure 2: Pinout (X-ray Top View) Table 1: Pin Description 2 PIN NAME DESCRIPTION 1 V EN 2 VMODE Mode Control 3 RFIN RF Input 4 VBATT Battery Voltage 5 V CC Supply Voltage 6 GND Ground 7 RFOUT RF Output 8 GND Ground PA Enable Voltage PRELIMINARY DATA SHEET - Rev 1.0 03/2006 AWT6307R ELECTRICAL CHARACTERISTICS Table 2: Absolute Minimum and Maximum Ratings PARAMETER MIN MAX UNIT Supply Voltage (VCC and VBATT) 0 +5 V Mode Control Voltage (VMODE) 0 +3.5 V Enable Voltage (VEN) 0 +3.5 V RF Input Power (PIN) - +10 dB m -40 +150 °C Storage Temperature (TSTG) Stresses in excess of the absolute ratings may cause permanent damage. Functional operation is not implied under these conditions. Exposure to absolute ratings for extended periods of time may adversely affect reliability. Table 3: Operating Ranges PARAMETER MIN TYP MAX UNIT COMMENTS Operating Frequency (f) 824 - 849 MHz Supply Voltage (VCC and VBATT) +3.2 +3.4 +4.2 V Enable Voltage (VEN) +2.2 0 +2.4 - +3.1 +0.5 V PA "on" PA "shut down" Mode Control Voltage (VMODE) +2.2 0 +2.4 - +3.1 +0.5 V Low Bias Mode High Bias Mode RF Output Power (POUT) 27.5(1) 28.0 - dB m Case Temperature (TC) -30 - +85 °C CDMA The device may be operated safely over these conditions; however, parametric performance is guaranteed only over the conditions defined in the electrical specifications. Notes: (1) For operation at VCC = +3.2 V, POUT is derated by 0.5 dB. PRELIMINARY DATA SHEET - Rev 1.0 03/2006 3 AWT6307R Table 4: Electrical Specifications - CDMA Operation (TC = +25 °C, VBATT = VCC = +3.4 V, VEN = +2.4 V, 50 Ω system) PARAMETER MIN TYP MAX UNIT 25 15 16 27 17 17.5 30 19 20 dB - -50 -57 -55 -47 -47 -47 dB c - -63 -61 -57 -57 dB c POUT = +28 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V 37 17 40 21 - % POUT = +28 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V Quiescent Current (Icq) - 14 20 mA VMODE = +2.4 V, Low Bias Enable Current - 0.4 0.8 mA through VEN pin, VMODE = +2.4 V Battery Current - 2.5 5 mA through VBATT pin, VMODE = +2.4 V Mode Control Current - 0.5 0.8 mA through VMODE pin, VMODE = +2.4 V Leakage Current - <1 5 µA VCC = +4.2 V, VEN = 0 V, VMODE = 0 V Noise in Receive Band - -133 -131 dBm/Hz Harmonics 2fo 3fo, 4fo - -42 -50 -30 -30 dB c Input Impedance - - 2:1 VSWR Gain Adjacent Channel Power at ±885 kHz offset (1) Primary Channel BW = 1.23 MHZ Adjacent Channel BW = 30 kHz Adjacent Channel Power at ±1.98 MHz offset (1) Primary Channel BW = 1.23 MHZ Adjacent Channel BW = 30 kHz Power-Added Efficiency (1) Spurious Output Level (all spurious outputs) Load mismatch stress with no permanent degradation or failure - - -65 dB c 8:1 - - VSWR COMMENTS POUT = +28 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V POUT = +17 dBm, VMODE = +2.4 V, VCC = +3.7 V POUT = +28 dBm, VMODE = 0 V POUT = +16 dBm, VMODE = +2.4 V POUT = +17 dBm, VMODE = +2.4 V, VCC = +3.7 V 869 MHz to 894 MHz POUT < +28 dBm In-band Load VSWR < 5:1 Out-of-band Load VSWR < 10:1 Applies over all operating conditions Applies over all operating conditions Notes: (1) PAE and ACP limit applies at 836.5 MHz. 4 PRELIMINARY DATA SHEET - Rev 1.0 03/2006 AWT6307R APPLICATION INFORMATION To ensure proper performance, refer to all related Application Notes on the ANADIGICS web site: http://www.anadigics.com Shutdown Mode The power amplifier may be placed in a shutdown mode by applying a logic low levels (see Operating Ranges table) to both the VREF and VMODE voltages. Bias Modes The power amplifier may be placed in either a Low Bias mode or a High Bias mode by applying the appropriate logic level (see Operating Ranges table) to the VMODE voltage. The Bias Control table lists the recommended modes of operation for various applications. Table 5: Bias Control POUT LE V E LS BIAS MODE V EN VMODE CDMA - low power <+16 dBm Low +2.4 V +2.4 V CDMA - high power >+16 dBm High +2.4 V 0V - Shutdown 0V 0V APPLICATION Shutdown VENABLE C6 1 µF VMODE C7 68 pF* RFIN VBATT C1 10 µF 1 VENABLE GND 8 2 VMODE RFOUT 7 3 RFIN GND 6 4 VBATT VCC 5 C4 68 pF GND at slug C5 68 pF RFOUT VCC C2 10 µF Note: * This capacitor is only needed if a DC voltage is present on the RF input pin Figure 3: Application Circuit PRELIMINARY DATA SHEET - Rev 1.0 03/2006 5 AWT6307R PACKAGE OUTLINE Figure 4: M9 Package Outline - 8 Pin 3 mm x 3 mm x 1 mm Surface Mount Module Figure 5: Branding Specification 6 PRELIMINARY DATA SHEET - Rev 1.0 03/2006 AWT6307R COMPONENT PACKAGING Pin 1 Figure 6: Tape & Reel Packaging Table 6: Tape & Reel Dimensions PACKAGE TYPE TAPE WIDTH POCKET PITCH REEL CAPACITY MAX REEL DIA 3 mm x 3 mm x 1 mm 12 mm 4 mm 2500 7" PRELIMINARY DATA SHEET - Rev 1.0 03/2006 7 AWT6307R ORDERING INFORMATION ORDER NUMBER TEMPERATURE RANGE PACKAGE DESCRIPTION COMPONENT PACKAGING AWT6307RM9Q7 -30 °C to +85 °C RoHS Compliant 8 Pin 3 mm x 3 mm x 1 mm Surface Mount Module Tape and Reel, 2500 pieces per Reel ANADIGICS, Inc. 141 Mount Bethel Road Warren, New Jersey 07059, U.S.A. Tel: +1 (908) 668-5000 Fax: +1 (908) 668-5132 URL: http://www.anadigics.com E-mail: [email protected] IMPORTANT NOTICE ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges customers to verify that the information they are using is current before placing orders. WARNING ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS product in any such application without written consent is prohibited. 8 PRELIMINARY DATA SHEET - Rev 1.0 03/2006