ANADIGICS AWT6307RM9Q7

AWT6307R
HELP
TM
Cellular CDMA 3.4 V/28 dBm
Linear Power Amplifier Module
PRELIMINARY DATA SHEET - Rev 1.0
FEATURES
•
InGaP HBT Technology
•
High Efficiency:
21 % @ +16 dBm output
40 % @ +28 dBm output
•
Low Quiescent Current: 16 mA
•
Low Leakage Current in Shutdown Mode: <1 µA
•
Internal Voltage Regulation
•
Optimized for a 50 Ω System
•
Low Profile Surface Mount Package: 1 mm
•
CDMA 1XRTT, 1xEV-DO Compliant
•
Pinout Enables Easy Phone Board Migration
From 4 mm x 4 mm Package
•
RoHS Compliant Package, 250 oC MSL-3
AW
T63
07
R
M9 Package
8 Pin 3 mm x 3 mm x 1 mm
Surface Mount Module
APPLICATIONS
•
CDMA Wireless Handsets and Data Devices
PRODUCT DESCRIPTION
The AWT6307R meets the increasing demands for
higher efficiency and smaller footprint in CDMA 1X
handsets. The package pinout was chosen to
enable handset manufacturers to switch from a
4 mm x 4 mm PA module with few layout changes
while reducing board area requirements by 44 %.
The AWT6307R uses ANADIGICS’ exclusive InGaPPlus™ technology, which combines HBT and
pHEMT devices on the same die, to enable stateof-the-art reliability, temperature stability, and
ruggedness. The AWT6307R is part of ANADIGICS’
High-Efficiency-at-Low-Power (HELP™) family of
CDMA power amplifiers, which deliver low quiescent
currents and significantly greater efficiency without
a costly external DAC or DC-DC converter. Through
selectable bias modes, the AWT6307 achieves
optimal efficiency across different output power
levels, specifically at low- and mid-range power
levels where the PA typically operates, thereby
dramatically increasing handset talk-time and
standby-time. Its built-in voltage regulator eliminates
the need for external voltage regulation
components. The 3 mm x 3 mm x 1 mm surface
mount package incorporates matching networks
optimized for output power, efficiency and linearity
in a 50 Ω system.
03/2006
GND at slug (pad)
VEN
8
GND
VMODE 2
7
RFOUT
RFIN 3
6
GND
VBATT 4
5
VCC
1
Bias Control
Figure 1: Block Diagram
AWT6307R
GND
VEN
1
8
GND
VMODE
2
7
RFOUT
RFIN
3
6
GND
VBATT
4
5
VCC
GND
Figure 2: Pinout (X-ray Top View)
Table 1: Pin Description
2
PIN
NAME
DESCRIPTION
1
V EN
2
VMODE
Mode Control
3
RFIN
RF Input
4
VBATT
Battery Voltage
5
V CC
Supply Voltage
6
GND
Ground
7
RFOUT
RF Output
8
GND
Ground
PA Enable Voltage
PRELIMINARY DATA SHEET - Rev 1.0
03/2006
AWT6307R
ELECTRICAL CHARACTERISTICS
Table 2: Absolute Minimum and Maximum Ratings
PARAMETER
MIN
MAX
UNIT
Supply Voltage (VCC and VBATT)
0
+5
V
Mode Control Voltage (VMODE)
0
+3.5
V
Enable Voltage (VEN)
0
+3.5
V
RF Input Power (PIN)
-
+10
dB m
-40
+150
°C
Storage Temperature (TSTG)
Stresses in excess of the absolute ratings may cause permanent
damage. Functional operation is not implied under these conditions.
Exposure to absolute ratings for extended periods of time may
adversely affect reliability.
Table 3: Operating Ranges
PARAMETER
MIN
TYP
MAX
UNIT
COMMENTS
Operating Frequency (f)
824
-
849
MHz
Supply Voltage (VCC and VBATT)
+3.2
+3.4
+4.2
V
Enable Voltage (VEN)
+2.2
0
+2.4
-
+3.1
+0.5
V
PA "on"
PA "shut down"
Mode Control Voltage (VMODE)
+2.2
0
+2.4
-
+3.1
+0.5
V
Low Bias Mode
High Bias Mode
RF Output Power (POUT)
27.5(1)
28.0
-
dB m
Case Temperature (TC)
-30
-
+85
°C
CDMA
The device may be operated safely over these conditions; however, parametric performance is guaranteed
only over the conditions defined in the electrical specifications.
Notes:
(1) For operation at VCC = +3.2 V, POUT is derated by 0.5 dB.
PRELIMINARY DATA SHEET - Rev 1.0
03/2006
3
AWT6307R
Table 4: Electrical Specifications - CDMA Operation
(TC = +25 °C, VBATT = VCC = +3.4 V, VEN = +2.4 V, 50 Ω system)
PARAMETER
MIN
TYP
MAX
UNIT
25
15
16
27
17
17.5
30
19
20
dB
-
-50
-57
-55
-47
-47
-47
dB c
-
-63
-61
-57
-57
dB c
POUT = +28 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.4 V
37
17
40
21
-
%
POUT = +28 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.4 V
Quiescent Current (Icq)
-
14
20
mA
VMODE = +2.4 V, Low Bias
Enable Current
-
0.4
0.8
mA
through VEN pin, VMODE = +2.4 V
Battery Current
-
2.5
5
mA
through VBATT pin, VMODE = +2.4 V
Mode Control Current
-
0.5
0.8
mA
through VMODE pin, VMODE = +2.4 V
Leakage Current
-
<1
5
µA
VCC = +4.2 V, VEN = 0 V,
VMODE = 0 V
Noise in Receive Band
-
-133
-131
dBm/Hz
Harmonics
2fo
3fo, 4fo
-
-42
-50
-30
-30
dB c
Input Impedance
-
-
2:1
VSWR
Gain
Adjacent Channel Power
at ±885 kHz offset (1)
Primary Channel BW = 1.23 MHZ
Adjacent Channel BW = 30 kHz
Adjacent Channel Power
at ±1.98 MHz offset (1)
Primary Channel BW = 1.23 MHZ
Adjacent Channel BW = 30 kHz
Power-Added Efficiency (1)
Spurious Output Level
(all spurious outputs)
Load mismatch stress with no
permanent degradation or failure
-
-
-65
dB c
8:1
-
-
VSWR
COMMENTS
POUT = +28 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.4 V
POUT = +17 dBm, VMODE = +2.4 V,
VCC = +3.7 V
POUT = +28 dBm, VMODE = 0 V
POUT = +16 dBm, VMODE = +2.4 V
POUT = +17 dBm, VMODE = +2.4 V,
VCC = +3.7 V
869 MHz to 894 MHz
POUT < +28 dBm
In-band Load VSWR < 5:1
Out-of-band Load VSWR < 10:1
Applies over all operating
conditions
Applies over all operating
conditions
Notes:
(1) PAE and ACP limit applies at 836.5 MHz.
4
PRELIMINARY DATA SHEET - Rev 1.0
03/2006
AWT6307R
APPLICATION INFORMATION
To ensure proper performance, refer to all related
Application Notes on the ANADIGICS web site:
http://www.anadigics.com
Shutdown Mode
The power amplifier may be placed in a shutdown
mode by applying a logic low levels (see Operating
Ranges table) to both the VREF and VMODE voltages.
Bias Modes
The power amplifier may be placed in either a Low
Bias mode or a High Bias mode by applying the
appropriate logic level (see Operating Ranges table)
to the VMODE voltage. The Bias Control table lists the
recommended modes of operation for various
applications.
Table 5: Bias Control
POUT
LE V E LS
BIAS
MODE
V EN
VMODE
CDMA - low power
<+16 dBm
Low
+2.4 V
+2.4 V
CDMA - high power
>+16 dBm
High
+2.4 V
0V
-
Shutdown
0V
0V
APPLICATION
Shutdown
VENABLE
C6
1 µF
VMODE
C7
68 pF*
RFIN
VBATT
C1
10 µF
1
VENABLE
GND
8
2
VMODE
RFOUT
7
3
RFIN
GND
6
4
VBATT
VCC
5
C4
68 pF
GND
at slug
C5
68 pF
RFOUT
VCC
C2
10 µF
Note:
* This capacitor is only needed if a DC voltage is present on the RF input pin
Figure 3: Application Circuit
PRELIMINARY DATA SHEET - Rev 1.0
03/2006
5
AWT6307R
PACKAGE OUTLINE
Figure 4: M9 Package Outline - 8 Pin 3 mm x 3 mm x 1 mm Surface Mount Module
Figure 5: Branding Specification
6
PRELIMINARY DATA SHEET - Rev 1.0
03/2006
AWT6307R
COMPONENT PACKAGING
Pin 1
Figure 6: Tape & Reel Packaging
Table 6: Tape & Reel Dimensions
PACKAGE TYPE
TAPE WIDTH
POCKET PITCH
REEL CAPACITY
MAX REEL DIA
3 mm x 3 mm x 1 mm
12 mm
4 mm
2500
7"
PRELIMINARY DATA SHEET - Rev 1.0
03/2006
7
AWT6307R
ORDERING INFORMATION
ORDER NUMBER
TEMPERATURE
RANGE
PACKAGE
DESCRIPTION
COMPONENT PACKAGING
AWT6307RM9Q7
-30 °C to +85 °C
RoHS Compliant 8 Pin
3 mm x 3 mm x 1 mm
Surface Mount Module
Tape and Reel, 2500 pieces per Reel
ANADIGICS, Inc.
141 Mount Bethel Road
Warren, New Jersey 07059, U.S.A.
Tel: +1 (908) 668-5000
Fax: +1 (908) 668-5132
URL: http://www.anadigics.com
E-mail: [email protected]
IMPORTANT NOTICE
ANADIGICS, Inc. reserves the right to make changes to its products or to discontinue any product at any time without
notice. The product specifications contained in Advanced Product Information sheets and Preliminary Data Sheets are
subject to change prior to a product’s formal introduction. Information in Data Sheets have been carefully checked and are
assumed to be reliable; however, ANADIGICS assumes no responsibilities for inaccuracies. ANADIGICS strongly urges
customers to verify that the information they are using is current before placing orders.
WARNING
ANADIGICS products are not intended for use in life support appliances, devices or systems. Use of an ANADIGICS
product in any such application without written consent is prohibited.
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PRELIMINARY DATA SHEET - Rev 1.0
03/2006