APM2522NU N-Channel Enhancement Mode MOSFET Features • Pin Description 25V/30A, RDS(ON)=15mΩ (typ.) @ VGS=10V 3 RDS(ON)=22mΩ (typ.) @ VGS=4.5V • • • • Super High Dense Cell Design 1 2 Avalanche Rated Reliable and Rugged Lead Free Available (RoHS Compliant) Pin 3 D Applications • Pin 1 G Power Management in Desktop Computer or DC/DC Converters S Pin 2 Ordering and Marking Information Package Code U : TO-252 Operating Junction Temp. Range C : -55 to 150 °C Handling Code TU : Tube TR : Tape & Reel Lead Free Code L : Lead Free Device Blank : Original Device APM2522N Lead Free Code Handling Code Temp. Range Package Code APM2522N U : APM2522N XXXXX XXXXX - Date Code Note: ANPEC lead-free products contain molding compounds and 100% matte tin plate termination finish; which are fully compliant with RoHS and compatible with both SnPb and lead-free soldiering operations. ANPEC lead-free products meet or exceed the lead-free requirements of IPC/JEDEC J STD-020C for MSL classification at lead-free peak reflow temperature. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 1 www.anpec.com.tw APM2522NU Absolute Maximum Ratings Symbol Parameter Rating Unit Common Ratings (TA = 25°C Unless Otherwise Noted) VDSS Drain-Source Voltage 25 VGSS Gate-Source Voltage ±20 Maximum Junction Temperature 150 °C -55 to 150 °C TC=25°C 20 A TC=25°C 100 TC=100°C 70 TC=25°C 30 TC=100°C 20 TC=25°C 50 TC=100°C 20 TJ TSTG Storage Temperature Range IS Diode Continuous Forward Current IDP 300µs Pulse Drain Current Tested V A Mounted on Large Heat Sink ID Continuous Drain Current PD Maximum Power Dissipation RθJC * 2.5 Thermal Resistance-Junction to Case A W °C/W 2 Mounted on PCB of 1in Pad Area ID Continuous Drain Current PD Maximum Power Dissipation RθJA TA=25°C 9 TA=100°C 6 TA=25°C 2.5 TA=100°C 1 Thermal Resistance-Junction to Ambient 50 A W °C/W Mounted on PCB of Minimum Footprint ID Continuous Drain Current PD Maximum Power Dissipation RθJA Thermal Resistance-Junction to Ambient TA=25°C 7 TA=100°C 4 TA=25°C 1.5 TA=100°C 0.5 75 A °C/W °C/W Notes： * Current limited by bond wire. Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 2 www.anpec.com.tw APM2522NU Electrical Characteristics Symbol Parameter Static Characteristics BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current VGS(th) IGSS RDS(ON) a (TA = 25°C) Test Condition VGS=0V, IDS=250µA Gate Leakage Current VGS=±20V, VDS=0V trr Reverse Recovery Time Qrr Reverse Recovery Charge Max. 25 1 30 1 1.5 µA 2.5 V ±100 nA VGS=10V, IDS=20A 15 20 VGS=4.5V, IDS=10A 22 28 ISD=10A, VGS=0V 0.7 1.1 ISD=10A, dISD/dt =100A/µs Unit V TJ=85°C VDS=VGS, IDS=250µA Diode Characteristics a VSD Diode Forward Voltage Typ. VDS=20V, VGS=0V Gate Threshold Voltage Drain-Source On-state Resistance Min. mΩ V 50 ns 3 nC 2 Ω b Dynamic Characteristics RG Gate Resistance VGS=0V,VDS=0V,F=1MHz Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance td(ON) Turn-on Delay Time tr Turn-on Rise Time td(OFF) Turn-off Delay Time tf VGS=0V, VDS=15V, Frequency=1.0MHz VDD=15V, RL=15Ω, IDS=1A, VGEN=10V, RG=6Ω Turn-off Fall Time Gate Charge Characteristics Qg Total Gate Charge 825 pF 125 85 13 24 19 35 31 57 5 10 17 24 ns b Qgs Gate-Source Charge Qgd Gate-Drain Charge VDS=15V, VGS=10V, IDS=20A 2 nC 5 Notes: a : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2%. b : Guaranteed by design, not subject to production testing. Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 3 www.anpec.com.tw APM2522NU Typical Characteristics Drain Current 60 35 50 30 ID - Drain Current (A) Ptot - Power (W) Power Dissipation 40 30 20 10 25 20 15 10 5 o o TC=25 C 0 0 20 40 60 80 100 120 140 160 180 TC=25 C,VG=10V 0 20 40 60 80 100 120 140 160 Tj - Junction Temperature (°C) Tj - Junction Temperature (°C) Safe Operation Area Thermal Transient Impedance 300 2 100 1 n) s(o Rd Normalized Effective Transient ID - Drain Current (A) 0 it Lim 1ms 10ms 10 100ms 1s DC 1 Duty = 0.5 0.2 0.1 0.05 0.02 0.1 0.01 Single Pulse 2 Mounted on 1in pad o RθJA :50 C/W o TC=25 C 0.1 0.1 1 10 0.01 1E-4 70 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 1E-3 4 www.anpec.com.tw APM2522NU Typical Characteristics (Cont.) Drain-Source On Resistance Output Characteristics 35 60 VGS= 5,6,7,8,9,10V 4V RDS(ON) - On - Resistance (mΩ) ID - Drain Current (A) 50 3.5V 40 30 3V 20 10 2.5V 0 0.0 0.5 1.0 1.5 2.0 2.5 25 VGS= 4.5V 20 VGS=10V 15 10 5 0 3.0 5 10 15 20 25 VDS - Drain-Source Voltage (V) ID - Drain Current (A) Drain-Source On Resistance Gate Threshold Voltage 30 1.6 30 IDS =250µA ID=20A Normalized Threshold Vlotage 28 RDS(ON) - On - Resistance (mΩ) 30 26 24 22 20 18 16 14 1.4 1.2 1.0 0.8 0.6 0.4 12 10 1 2 3 4 5 6 7 8 9 0.2 -50 -25 10 25 50 75 100 125 150 Tj - Junction Temperature (°C) VGS - Gate - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 0 5 www.anpec.com.tw APM2522NU Typical Characteristics (Cont.) Drain-Source On Resistance Source-Drain Diode Forward 100 2.0 VGS = 10V IDS = 20A 1.6 o Tj=150 C 1.4 IS - Source Current (A) Normalized On Resistance 1.8 1.2 1.0 0.8 0.6 0.4 10 o Tj=25 C 1 0.2 o 0.0 -50 -25 RON@Tj=25 C: 15mΩ 0 25 50 75 0.3 0.0 100 125 150 0.8 1.2 1.6 Tj - Junction Temperature (°C) VSD - Source-Drain Voltage (V) Capacitance Gate Charge 2.0 10 1200 Frequency=1MHz VDS=15V 9 VGS - Gate-source Voltage (V) 1000 C - Capacitance (pF) 0.4 Ciss 800 600 400 200 Coss ID = 20A 8 7 6 5 4 3 2 1 Crss 0 0 0 5 10 15 20 25 30 3 6 9 12 15 18 QG - Gate Charge (nC) VDS - Drain - Source Voltage (V) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 0 6 www.anpec.com.tw APM2522NU Avalanche Test Circuit and Waveforms VDS L tp VDSX(SUS) DUT VDS IAS RG VDD VDD IL tp EAS 0.01Ω tAV Avalanche Test Circuit and Waveforms VDS RD VDS DUT 90% VGS RG VDD 10% tp VGS td(on) tr Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 7 td(off) tf www.anpec.com.tw APM2522NU Packaging Information TO-252 (Reference JEDEC Registration TO-252) E A b2 C1 L2 D H L1 L b C e1 Dim A1 Millimeters Inches Min. Max. Min. Max. 2.18 2.39 0.086 0.094 A1 0.89 1.27 0.035 0.050 b 0.508 0.89 0.020 0.035 b2 5.207 5.461 0.205 0.215 C 0.46 0.58 0.018 0.023 C1 0.46 0.58 0.018 0.023 D 5.334 6.22 0.210 0.245 A E 6.35 6.73 0.250 0.265 e1 3.96 5.18 0.156 0.204 H 9.398 10.41 0.370 0.410 L 0.51 L1 0.64 1.02 0.025 0.040 L2 0.89 2.032 0.035 0.080 Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 0.020 8 www.anpec.com.tw APM2522NU Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. (IR/Convection or VPR Reflow) temperature Reflow Condition Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection VPR Average ramp-up rate (183°C to Peak) 3°C/ second max. Preheat temperature (125 ±25°C) 10°C /second max. 120 seconds max. Temperature maintained above 183°C 60~150 seconds Time within 5°C of actual peak temperature 10~20 seconds Peak temperature range 220 + 5/-0°C or 235 +5°C/-0°C 215~ 219 °C or 235 +5°C/-0°C Ramp-down rate 6°C /second max. Time 25°C to peak temperature 6 minutes max. 60 seconds 10°C /second max. Classification Reflow Profiles pkg. thickness ≥ 2.5mm and all bags Convection 220 +5/-0° C pkg. thickness < 2.5mm and 3 pkg. volume ≥ 350mm pkg. thickness < 2.5mm and pkg. volume 3 < 350mm Convection 235 +5/-0° C VPR 215-219° C VPR 235 +5/-0° C IR/Convection 220 +5/-0° C IR/Convection 220 +5/-0° C Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 9 www.anpec.com.tw APM2522NU Reliability test program Test item Method Description SOLDERABILITY MIL-STD-883D-2003 245°C,5 SEC HOLT MIL-STD 883D-1005.7 1000 Hrs Bias @125°C PCT JESD-22-B, A102 168 Hrs, 100% RH, 121°C TST MIL-STD 883D-1011.9 -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions t D P Po E P1 Bo F W Ao D1 Ko T2 J C A B T1 Application TO-252 A B C J T1 T2 W P E 330±3 100±2 13±0.5 2±0.5 16.4+0.3 -0.2 2.5±0.5 16+0.3 16-0.1 8±0.1 1.75±0.1 F D D1 Po P1 Ao Bo Ko t 7.5±0.1 1.5±0.1 1.5±0.25 4.0±0.1 2.0±0.1 6.8±0.1 10.4±0.1 2.5±0.1 0.3±0.05 (mm) Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 10 www.anpec.com.tw APM2522NU Customer Service Anpec Electronics Corp. Head Office : No.6, Dusing 1st Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Jun., 2006 11 www.anpec.com.tw