APM4429 P-Channel Enhancement Mode MOSFET Features • Pin Description -30V/-13A, RDS(ON) = 8mΩ(typ.) @ VGS = -20V 5 RDS(ON) = 9mΩ(typ.) @ VGS = -10V RDS(ON) =13mΩ(typ.) @ VGS = -4.5V • • • 5 Super High Density Cell Design & , % , 5 ! $ , / " # , Reliable and Rugged SO − 8 SO-8 Package S S S Applications • Power Management in Notebook Computer, G Portable Equipment and Battery Powered Systems Ordering and Marking Information L e a d F re e C o d e H a n d lin g C o d e Tem p. R ange P ackage C ode APM 4429 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol P-Channel MOSFET P ackage C ode K : S O -8 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 °C H a n d lin g C o d e TU : Tube TR : Tape & Reel L e a d F re e C o d e L : L e a d F re e D e v ic e B la n d : O rg in a l D e v ic e APM 4429 APM 4429 K : D D D D (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage -30 VGSS Gate-Source Voltage ±20 * ID Maximum Drain Current Continuous IDM Maximum Drain Current Pulsed TA = 25°C -13 -50 Unit V A * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 1 www.anpec.com.tw APM4429 Absolute Maximum Ratings Symbol PD TJ)TSTG * RθJA Parameter Rating Maximum Power Dissipation TA = 25°C 2.5 TA = 100°C 1.0 Maximum Operating and Storage Junction Temperature P aram eter Unit W -55 to 150 °C 62.5 °C/W Thermal Resistance - Junction to Ambient Electrical Characteristics S ym b o l (TA = 25°C unless otherwise noted) (TA = 25°C unless otherwise noted) Test C o n d itio n AP M 44 29 Typ = . M ax. M in . U n it S tatic B V DSS ID S S V G S (th) IG S S R D S (O N ) V SD D rain-S ource B reak dow n Voltage Z ero G ate Voltage D rain C urren t G ate T hreshold Volta ge V D S =V G S , I D S =-250 µA G ate Le ak age C urren t V G S =±20V , V D S =0V D rain-S ource O n-state R esista nce > D iode F orw ard Voltag e V G S =0V , I D S =-250 µA V D S =-24V , V G S =0V -1 -1 -1.5 11 9 12 13 17 -0.7 -1.3 135 Qg Total G ate C harge V D S =-15V , V G S = -10V 105 Q gs G ate-S ource C harge l D = -13A 10.8 Q gd G ate-D rain C harge t d (O N ) Turn-on D ela y Tim e Tr Turn-on R ise Tim e Turn-off D ela y Tim e V D D =-15V , I D =-1A , V G E N =-10V , R G =6 Ω R L =15Ω Tf Turn-off F all Tim e Input C apacitance V G S =0V C o ss O utput C apacitance V D S =-25V C rss R evers e Transfer C a pacitance F requen cy=1.0M H z b mΩ V nC 13.6 C iss Notes a ±100 8 D yn am ic = t d (O F F ) V nA V G S =-10V , I D S =-13A I S D =-3A , V G S =0V µA -2 V G S =-20V , I D S =-13A V G S =-4.5V , I D =-12A > V -30 15 30 20 30 55 85 40 65 ns 4730 800 pF 240 : Pulse test ; pulse width ≤300µs, duty cycle ≤ 2% : Guaranteed by design, not subject to production testing Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 2 www.anpec.com.tw APM4429 Typical Characteristics Output Characteristics 50 Transfer Characteristics 50 40 -VGS=3V 30 20 -VGS=2.5V 10 30 o Tj=125 C 20 -ID-Drain Current (A) 40 -ID-Drain Current (A) -VGS= 4,5,6,7,8,9,10V o Tj=25 C 10 o 0 Tj=-55 C -VGS=2V 0 2 4 6 8 0 10 -VDS - Drain-to-Source Voltage (V) 0 1 Threshold Voltage vs. Junction Temperature RDS(on)-On-Resistance (Ω) 1.00 -VGS(th)-Threshold Voltage (V) (Normalized) -IDS =250µA 1.25 0.50 0.25 0.00 -50 -25 0 25 50 75 0.025 0.020 -VGS=4.5V 0.015 -VGS=10V 0.010 -VGS=20V 0.005 0.000 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 4 0.030 1.50 0.75 3 On-Resistance vs. Drain Current 1.75 2 -VGS - Gate-to-Source Voltage (V) 0 20 40 60 80 100 -ID - Drain Current (A) 3 www.anpec.com.tw APM4429 Typical Characteristics On-Resistance vs. Gate-to-Source Voltage 0.04 0.02 0 5 10 15 -VGS = 10V -ID = 13A 1.50 1.25 RDS(on)-On-Resistance (Ω) (Normalized) -ID= 13A 0.06 0.00 1.75 RDS(on)-On-Resistance (Ω) 0.08 On-Resistance vs. Junction Temperature 1.00 0.75 0.50 -50 20 -25 10 7000 -VDS= 15 V -ID= 13 A 75 Frequency=1MHz 4 2 Ciss 5000 4000 3000 6 2000 Coss 1000 0 30 100 125 150 6000 Capacitance (pF) -VGS-Gate-Source Voltage (V) 50 Capacitance Gate Charge 0 25 (°C) TJ - Junction Temperature -VGS - Gate-to-Source Voltage (V) 8 0 60 90 0 120 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 Crss 0 5 10 15 20 25 30 -VDS - Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM4429 Typical Characteristics Source-Drain Diode Forward Voltage 50 120 o 90 Power (W) Tj=150 C o Tj=25 C 1 60 10 -IS-Source Current (A) Single Pulse Power 30 0.1 0.0 0.4 0.8 1.2 1.6 0 0.01 2.0 0.1 1 -VSD-Source-to-Drain Voltage (V ) 10 30 Time (sec) Normalized Thermal Transient Impedence, Junction to Ambient 1 Duty Cycle=0.5 0.1 D=0.2 D=0.1 0.01 Normalized Effective Transient Thermal Impedance 2 D=0.05 1.Duty Cycle, D= t1/t2 o 2.Per Unit Base=RthJA=62.5 C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted D=0.02 SINGLE PULSE 1E-3 1E-4 1E-3 0.01 0.1 1 10 30 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 5 www.anpec.com.tw APM4429 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Mi ll im et er s Inche s A Min. 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 1. 27BSC 0. 50BSC 8° 8° 6 www.anpec.com.tw APM4429 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. (IR/Convection or VPR Reflow) temperature Reflow Condition Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM4429 Reliability test program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions D P Po E t P1 Bo F W Ao D1 Ko T2 J C A B T1 Application SOP- 8 A B 330 ± 1 F 5.5± 1 J T1 T2 W P E 62 +1.5 C 12.75+ 0.15 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1 D D1 Po P1 Ao Bo Ko t 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 2.0 ± 0.1 6.4 ± 0.1 8 5.2± 0. 1 2.1± 0.1 0.3±0.013 www.anpec.com.tw APM4429 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Sep., 2003 9 www.anpec.com.tw