APM9424 N-Channel Enhancement Mode MOSFET Features • Pin Description 20V/10A, RDS(ON) = 10mΩ(typ.) @ VGS = 4.5V RDS(ON) = 15mΩ(typ.) @ VGS = 2.5V • • • Super High Density Cell Design Reliable and Rugged SO-8 Package S 1 8 D S 2 7 D S 3 6 D G 4 5 D SO − 8 D D D D Applications • Power Management in Notebook Computer, G Portable Equipment and Battery Powered Systems S Ordering and Marking Information APM 9424 P ackage C ode K : S O -8 O p e ra tio n J u n c tio n T e m p . R a n g e C : -5 5 to 1 5 0 ° C H a n d lin g C o d e TU : Tube TR : Tape & Reel H a n d lin g C o d e Tem p. R ange P ackage C ode APM 9424 K : APM 9424 XXXXX X X X X X - D a te C o d e Absolute Maximum Ratings Symbol S S N-Channel MOSFET (TA = 25°C unless otherwise noted) Parameter Rating VDSS Drain-Source Voltage 20 VGSS Gate-Source Voltage ±16 ID* Maximum Drain Current – Continuous IDM Maximum Drain Current – Pulsed TA = 25°C 10 30 Unit V A * Surface Mounted on FR4 Board, t ≤ 10 sec. ANPEC reserves the right to make changes to improve reliability or manufacturability without notice, and advise customers to obtain the latest version of relevant information to verify before placing orders. Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 1 www.anpec.com.tw APM9424 Absolute Maximum Ratings (Cont.) Symbol PD TJ (TA = 25°C unless otherwise noted) Parameter Rating Maximum Power Dissipation TA = 25°C 2.5 TA = 100°C 1.0 Maximum Junction Temperature Unit W 150 TSTG Storage Temperature Range RθJA* Thermal Resistance - Junction to Ambient °C -55 to 150 50 °C/W * Surface Mounted on FR4 Board, t ≤ 10 sec. Electrical Characteristics Symbol Parameter (TA=25°C unless otherwise noted) Test Condition APM9424 Typ. Max. Min. Unit Static BVDSS IDSS VGS(th) IGSS RDS(ON)a VSDa Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Threshold Voltage Gate Leakage Current VGS=0V , IDS=250µA 20 V 1 µA 0.9 1.5 ±100 V nA VDS=16V , VGS=0V Drain-Source On-state VDS=VGS , IDS=250µA VGS=±16V , VDS=0V VGS=4.5V , IDS=10A 10 13 Resistance VGS=2.5V , IDS=8A 15 20 Diode Forward Voltage ISD=2.3A , VGS=0V 0.8 1.3 28.2 5.2 37 Dynamicb Qg Total Gate Charge Qgs Gate-Source Charge Qgd td(ON) Tr Gate-Drain Charge Turn-on Delay Time Turn-on Rise Time td(OFF) Tf Turn-off Delay Time Turn-off Fall Time Ciss Coss Crss Input Capacitance Output Capacitance Reverse Transfer VDS=10V , VGS=4.5V , IDS=10A 0.7 70 160 VGEN=4.5V , RG=6Ω 115 40 235 85 VGS=0V , VDS=15V 2400 720 480 Frequency=1.0MHz V nC 7.6 35 80 VDD=15V , IDS=10A , mΩ ns pF Notes a b : Guaranteed by design, not subject to production testing : Pulse test ; pulse width ≤ 500µs, duty cycle ≤ 2% Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 2 www.anpec.com.tw APM9424 Typical Characteristics Output Characteristics Transfer Characteristics 30 30 VGS=2.5,3,4,5,6,7,8,9,10V 25 ID-Drain Current (A) ID-Drain Current (A) 25 20 15 VGS=2V 10 20 TJ=125°C 15 TJ=25°C 10 TJ=-55°C 5 5 VGS=1.5V 0 0 2 4 6 8 0 0.0 10 0.5 VDS - Drain-to-Source Voltage (V) RDS(on)-On-Resistance (Ω) VGS(th)-Threshold Voltage (V) 1.50 1.25 1.00 0.75 0.50 0.25 25 50 75 3.0 0.025 0.020 VGS=2.5V 0.015 VGS=4.5V 0.010 0.005 0.000 100 125 150 Tj - Junction Temperature (°C) Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 2.5 0.030 IDS=250µA 0 2.0 On-Resistance vs. Drain Current 1.75 -25 1.5 VGS - Gate-to-Source Voltage (V) Threshold Voltage vs. Junction Temperature 0.00 -50 1.0 0 5 10 15 20 25 30 ID - Drain Current (A) 3 www.anpec.com.tw APM9424 Typical Characteristics On-Resistance vs. Gate-to-Source Voltage On-Resistance vs. Junction Temperature 1.8 0.05 RDS(on)-On-Resistance (Ω) (Normalized) RDS(on)-On-Resistance (Ω) ID=10A 0.04 0.03 0.02 0.01 0.00 0 2 4 6 8 1.6 VGS=4.5V IDS=10A 1.4 1.2 1.0 0.8 0.6 0.4 -50 10 VGS - Gate-to-Source Voltage (V) -25 0 25 100 125 150 Capacitance 4000 VDS=10V IDS=10A Frequency=1MHz 4 3200 Capacitance (pF) VGS-Gate-Source Voltage (V) 75 TJ - Junction Temperature (°C) Gate Charge 5 50 3 2 Ciss 2400 1600 Coss 1 800 0 0 Crss 0 5 10 15 20 25 30 35 QG - Gate Charge (nC) Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 0 5 10 15 20 VDS - Drain-to-Source Voltage (V) 4 www.anpec.com.tw APM9424 Typical Characteristics Source-Drain Diode Forward Voltage Single Pulse Power 80 30 60 1 TJ=25°C TJ=150°C 0.1 Power (W) IS-Source Current (Α) 10 40 20 0.01 0 0.01 1E-3 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 0.1 VSD-Source-to-Drain Voltage (V ) 1 10 100 Time (sec) Normalized Thermal Transient Impedance, Junction to Ambient Normalized Effective Transient Thermal Impedance 2 1 Duty Cycle = 0.5 D= 0.2 D= 0.1 0.1 D= 0.05 D= 0.02 1.Duty Cycle, D=t1/t2 2.Per Unit Base=RthJA=50°C/W 3.TJM-TA=PDMZthJA 4.Surface Mounted SINGLE PULSE 0.01 1E-4 1E-3 0.01 0.1 1 10 100 Square Wave Pulse Duration (sec) Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 5 www.anpec.com.tw APM9424 Packaging Information E e1 0.015X45 SOP-8 pin ( Reference JEDEC Registration MS-012) H e2 D A1 A 1 L 0.004max. Dim Mi ll im et er s Inche s A Min . 1. 35 Max . 1. 75 Min. 0. 053 Max . 0. 069 A1 D E 0. 10 4. 80 3. 80 0. 25 5. 00 4. 00 0. 004 0. 189 0. 150 0. 010 0. 197 0. 157 H L e1 e2 5. 80 0. 40 0. 33 6. 20 1. 27 0. 51 0. 228 0. 016 0. 013 0. 244 0. 050 0. 020 φ 1 Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 1. 27B S C 0. 50B S C 8° 8° 6 www.anpec.com.tw APM9424 Physical Specifications Terminal Material Lead Solderability Solder-Plated Copper (Solder Material : 90/10 or 63/37 SnPb) Meets EIA Specification RSI86-91, ANSI/J-STD-002 Category 3. (IR/Convection or VPR Reflow) temperature Reflow Condition Peak temperature 183°C Pre-heat temperature Time Classification Reflow Profiles Convection or IR/ Convection Average ramp-up rate(183°C to Peak) 3°C/second max. 120 seconds max Preheat temperature 125 ± 25°C) 60 – 150 seconds Temperature maintained above 183°C Time within 5°C of actual peak temperature 10 –20 seconds Peak temperature range 220 +5/-0°C or 235 +5/-0°C Ramp-down rate 6 °C /second max. 6 minutes max. Time 25°C to peak temperature VPR 10 °C /second max. 60 seconds 215-219°C or 235 +5/-0°C 10 °C /second max. Package Reflow Conditions pkg. thickness ≥ 2.5mm and all bgas Convection 220 +5/-0 °C VPR 215-219 °C IR/Convection 220 +5/-0 °C pkg. thickness < 2.5mm and pkg. volume ≥ 350 mm³ Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 7 pkg. thickness < 2.5mm and pkg. volume < 350mm³ Convection 235 +5/-0 °C VPR 235 +5/-0 °C IR/Convection 235 +5/-0 °C www.anpec.com.tw APM9424 Reliability Test Program Test item SOLDERABILITY HOLT PCT TST Method MIL-STD-883D-2003 MIL-STD 883D-1005.7 JESD-22-B, A102 MIL-STD 883D-1011.9 Description 245°C,5 SEC 1000 Hrs Bias @ 125°C 168 Hrs, 100% RH, 121°C -65°C ~ 150°C, 200 Cycles Carrier Tape & Reel Dimensions D P Po E t P1 Bo F W Ao D1 Ko T2 J C A B T1 Application SOP- 8 A B 330 ± 1 F 5.5± 1 J T1 T2 W P E 62 +1.5 C 12.75+ 0.15 2 ± 0.5 12.4 ± 0.2 2 ± 0.2 12± 0. 3 8± 0.1 1.75±0.1 D D1 Po P1 Ao Bo Ko t 2.0 ± 0.1 6.4 ± 0.1 5.2± 0. 1 1.55 +0.1 1.55+ 0.25 4.0 ± 0.1 Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 8 2.1± 0.1 0.3±0.013 www.anpec.com.tw APM9424 Cover Tape Dimensions Application SOP- 8 Carrier Width 12 Cover Tape Width 9.3 Devices Per Reel 2500 Customer Service Anpec Electronics Corp. Head Office : 5F, No. 2 Li-Hsin Road, SBIP, Hsin-Chu, Taiwan, R.O.C. Tel : 886-3-5642000 Fax : 886-3-5642050 Taipei Branch : 7F, No. 137, Lane 235, Pac Chiao Rd., Hsin Tien City, Taipei Hsien, Taiwan, R. O. C. Tel : 886-2-89191368 Fax : 886-2-89191369 Copyright ANPEC Electronics Corp. Rev. A.1 - Jul., 2003 9 www.anpec.com.tw