5082-3306 FAST SWITCHING SILICON PIN DIODE DESCRIPTION: The ASI 5082-3306 is a passivated silicon PIN diode of mesa construction. Designed for controlling and processing microwave signals up to Ku band. PACKAGE STYLE 51 FEATURES: • 50 W Peak Pulse Power • Switching time < 5 nS • Heat Sink Cathode MAXIMUM RATINGS PDISS 0.25 W @ TC = 25 °C TJ -65 °C to +150 °C TSTG -65 °C to +150 °C NONE CHARACTERISTICS SYMBOL TC = 25 °C TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS VB IR = 10 µA CT VR = 20 V f = 1.0 MHz 0.45 pF RS IF = 20 mA f = 100 MHz 1.0 Ω trr IF = 20 mA 10 nS V 70 VR = 10 V A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1