AM1214-300 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .400 2L FLG(A) The ASI AM1214-300 is Designed for 1200 – 1400 MHz, L-Band Applications. A 4x .062 x 45° 2xB C F E D FEATURES: G • Internal Input/Output Matching Network • Common Base • PG = 6.5 db at 325 W/1400 MHz • Omnigold™ Metalization System L N 55 V M IN IM U M inches / m m inches / m m A .135 / 3.43 .145 / 3.68 B .100 / 2.54 .120 / 3.05 C .050 / 1.27 D .376 / 9.55 E .110 / 2.79 .130 / 3.30 F .395 / 10.03 .407 / 10.34 TJ .490 / 12.45 TSTG -65 °C to +200 °C θJC 0.24 °C/W CHARACTERISTICS SYMBOL .510 / 12.95 .100 / 2.54 I -65 °C to +250 °C .396 / 10.06 .193 / 4.90 G 730 W @ TC = 25 °C M AXIM U M D IM H PDISS P M 18.75 A VCC 2xR H J K I MAXIMUM RATINGS IC .040 x 45° J .690 / 17.53 .710 / 18.03 K .890 / 22.61 .910 / 23.11 L .003 / 0.08 .006 / 0.18 M .052 / 1.32 .072 / 1.83 N .118 / 3.00 .131 / 3.33 .230 / 5.84 P TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 50 mA 65 V BVCES IC = 50 mA 65 V BVEBO IE = 15 mA 3.0 V ICES VCE = 50 V hFE VCE = 5.0 V PG ηC POUT VCC = 50 V Conditions: Pulse Width = 50 µS IC = 5.0 A 10 PIN = 63 W 6.3 40 270 f = 1235 to 1365 MHz 6.8 45 300 30 mA --- --dB % W Duty Cycle = 4% A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. D 1/2 AM1214-300 ERROR! REFERENCE SOURCE NOT FOUND. FREQ ZIN (Ω) ZCL (Ω) 1235 MHz 2.5 + j5.0 2.0 – j2.5 1300 MHz 1.5 + j3.5 2.5 – j2.5 1365 MHz 1.0 + j3.5 2.0 – j3.0 TEST CIRCUIT A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. D 1/2