CBSL1SL NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI CBSL1SL is Designed for Class A, Cellular Base Staion Applications up to 960 MHz. PACKAGE STYLE .280 4L PILL FEATURES: A • Class A Operation • PG = 10 dB at 1.0 W/960 MHz • Omnigold™ Metalization System E C ØB E MAXIMUM RATINGS IC 0.250 A VCBO 40 V VCEO 28 V VEBO 3.5 V PDISS 7.0 W @ TC = 25 C E O O DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 F MAXIMUM 1.055 / 26.80 B O O ØC D -65 C to +200 C TJ B C .275 / 6.99 .285 / 7.24 D .004 / 0.10 .006 / 0.15 E .050 / 1.27 .060 . 1.52 F .118 / 3.00 .130 / 3.30 O TSTG -65 C to +150 C θJC 25 C/W O CHARACTERISTICS ORDER CODE: ASI10578 O TC = 25 C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 40 V BVCEO IC = 1.0 mA 28 V BVEBO IE = 1.0 mA 3.5 V ICBO VCB = 24 V hFE VCE = 5.0 V COB VCB = 24 V PG VCC = 24 V POUT = 1.0 W IC = 100 mA 20 f = 1.0 MHz ICQ = 125 mA f = 960 MHz 10 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.5 mA 120 --- 5.0 pF dB REV. A 1/1