MLN1027S NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1027S is Designed for Class A, Linear Applications up to 1.0 GHz. PACKAGE STYLE .280 4L STUD A FEATURES: 45° C • Class A Operation • PG = 9.0 dB at 0.5 W/1.0 GHz • Omnigold™ Metalization System E E B B C D J E MAXIMUM RATINGS IC 0.250 A VCBO 40 V VCEO 28 V VEBO G H K 3.5 V PDISS 7.0 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +150 °C θJC 25 °C/W CHARACTERISTICS #8-32 UNC DIM MINIMUM inches / mm inches / mm A 1.010 / 25.65 1.055 / 26.80 B .220 / 5.59 .230 /5.84 C .270 / 6.86 .285 / 7.24 D .003 / 0.08 .007 / 0.18 E .117 / 2.97 MAXIMUM .137 / 3.48 .572 / 14.53 F .130 / 3.30 G .245 / 6.22 H .255 / 6.48 .640 / 16.26 I J .175 / 4.45 .217 / 5.51 K .275 / 6.99 .285 / 7.24 ORDER CODE: ASI10619 TC = 25 °C NONETEST CONDITIONS SYMBOL I F MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 1.0 mA 40 V BVCEO IC = 1.0 mA 28 V BVEBO IE = 1.0 mA 3.5 V ICBO VCB = 24 V hFE VCE = 5.0 V COB VCB = 28 V PG VCE = 20 V POUT = 0.5 W IC = 100 mA 20 f = 1.0 MHz ICQ = 100 mA f = 1.0 GHz 9.0 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 0.5 mA 120 --- 3.5 pF dB REV. B 1/1