ASI MLN1027S_07

MLN1027S
NPN SILICON RF POWER TRANSISTOR
DESCRIPTION:
The ASI MLN1027S is Designed for
Class A, Linear Applications up to 1.0 GHz.
PACKAGE STYLE .280 4L STUD
A
FEATURES:
45°
C
• Class A Operation
• PG = 9.0 dB at 0.5 W/1.0 GHz
• Omnigold™ Metalization System
E
E
B
B
C
D
J
E
MAXIMUM RATINGS
IC
0.250 A
VCBO
40 V
VCEO
28 V
VEBO
G
H
K
3.5 V
PDISS
7.0 W @ TC = 25 °C
TJ
-65 °C to +200 °C
TSTG
-65 °C to +150 °C
θJC
25 °C/W
CHARACTERISTICS
#8-32 UNC
DIM
MINIMUM
inches / mm
inches / mm
A
1.010 / 25.65
1.055 / 26.80
B
.220 / 5.59
.230 /5.84
C
.270 / 6.86
.285 / 7.24
D
.003 / 0.08
.007 / 0.18
E
.117 / 2.97
MAXIMUM
.137 / 3.48
.572 / 14.53
F
.130 / 3.30
G
.245 / 6.22
H
.255 / 6.48
.640 / 16.26
I
J
.175 / 4.45
.217 / 5.51
K
.275 / 6.99
.285 / 7.24
ORDER CODE: ASI10619
TC = 25 °C
NONETEST CONDITIONS
SYMBOL
I
F
MINIMUM TYPICAL MAXIMUM
UNITS
BVCBO
IC = 1.0 mA
40
V
BVCEO
IC = 1.0 mA
28
V
BVEBO
IE = 1.0 mA
3.5
V
ICBO
VCB = 24 V
hFE
VCE = 5.0 V
COB
VCB = 28 V
PG
VCE = 20 V
POUT = 0.5 W
IC = 100 mA
20
f = 1.0 MHz
ICQ = 100 mA
f = 1.0 GHz
9.0
A D V A N C E D S E M I C O N D U C T O R, I N C.
7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004
Specifications are subject to change without notice.
0.5
mA
120
---
3.5
pF
dB
REV. B
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