MLN1033F NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI MLN1033F is Designed for Class A Linear Applications up to 1.0 GHz. PACKAGE STYLE .250 2L FLG A FEATURES: ØD • Class A Operation • PG = 12 dB at 2.0 W/1.0 GHz • Omnigold™ Metalization System B .060 x 45° CHAMFER C E G L F H J I K M MAXIMUM RATINGS 0.5 A IC VCBO 40 V VCES 25 V VEBO 3.5 V PDISS 20.6 W @ TC = 25 °C TSTG -65 °C to +150 °C θJC 17 °C/W CHARACTERISTICS SYMBOL MAXIMUM DIM MINIMUM inches / mm inches / mm A .028 / 0.71 .032 / 0.81 B .740 / 18.80 C .245 / 6.22 D .128 / 3.25 .255 / 6.48 .132 / 3.35 .125 / 3.18 E .117 / 2.97 .110 / 2.79 F .117 / 2.97 G -65 °C to +200 °C TJ NP H .560 / 14.22 .570 / 14.48 I .790 / 20.07 .810 / 20.57 J .225 / 5.72 .235 / 5.97 K .165 / 4.19 .185 / 4.70 L .003 / 0.08 .007 / 0.18 M .058 / 1.47 .068 / 1.73 N .119 / 3.02 .135 / 3.43 P .149 / 3.78 .187 / 4.75 ORDER CODE: ASI10626 TC = 25 °C NONETEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCBO IC = 2.0 mA 40 V BVCEO IC = 5.0 mA 25 V BVEBO IE = 2.0 mA 3.5 V hFE VCE = 5.0 V PG VCE = 18 V POUT = 2.0 W IC = 400 mA ICQ = 220 mA 15 f = 1.0 GHz 12 A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. 150 --dB REV. B 1/1