MRW2020 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: PACKAGE STYLE .250X.300 2L FLG The ASI MRW2020 is a high performance common base RF power transistor intended for 28V operation across the 1 to 2.3 GHz frequency range. FEATURES: • Gain: 5.2 dB Min. at 20 W • Output Power: 20 W • Diffused Ballast Resistors • Omnigold™ Metalization System MAXIMUM RATINGS IC 4.0 A VCES 50 V VEBO 3.5 V PDISS 60 W @ TC = 25 °C TJ -65 °C to +200 °C TSTG -65 °C to +200 °C θJC 3.0 °C/W CHARACTERISTICS TC = 25 °C NONETEST CONDITIONS SYMBOL MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 160 mA 50 --- --- V BVEBO IE = 2.0 mA 3.5 --- --- V ICBO VCB = 28 V --- --- 2.0 A hFE VCE = 5.0 V 10 --- 100 --- Cob VCB = 28 V --- --- 24 pF 5.2 --- --- dB 40 --- --- % GPB ηC Ψ VCC = 28 V IC = 800 mA f = 1.0 MHz POUT = 20 W VCC = 28 V f = 2.0 GHz f = 2.0 GHz Load VSWR = ∞:1, All Phase Angles No Degradation in Output Power A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1