S100-28 NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI 100-28 is designed for HF linear applications up to 30 MHz. PACKAGE STYLE .500 4L FLG FEATURES: .112x45° L A • PG = 16 dB min. at 100 W/30 MHz • High linear power output • IMD = -32 dBc max. at 100 W (PEP) • Omnigold™ Metalization System E FULL R C Ø.125 NOM. C B B E H E D G F MAXIMUM RATINGS I J IC 20 A VCES 70 V VCEO 33 V K MAXIMUM DIM MINIMUM inches / mm inches / mm A .220 / 5.59 .230 / 5.84 .125 / 3.18 B C .245 / 6.22 .255 / 6.48 D .720 / 18.28 .7.30 / 18.54 VEBO 4.0 V E F .970 / 24.64 .980 / 24.89 PDISS 250 W @ TC = 25 °C G .495 / 12.57 .505 / 12.83 H .003 / 0.08 .007 / 0.18 TJ -65 °C to +200 °C I .090 / 2.29 .110 / 2.79 J .150 / 3.81 .175 / 4.45 TSTG -65 °C to +150 °C K .980 / 24.89 1.050 / 26.67 θJC 0.7 °C/W CHARACTERISTICS .280 / 7.11 L TC = 25 °C NONETEST CONDITIONS SYMBOL .125 / 3.18 MINIMUM TYPICAL MAXIMUM UNITS BVCEO IC = 50 mA 33 V BVCES IC = 100 mA 70 V BVEBO IE = 5.0 mA 4.0 V ICES VCE = 28 V hFE VCE = 5.0 V Cob VCB = 28 V IC = 10 A 10 f = 1.0 MHz GP ηC VCE = 28 V PIN = 2.5 W f = 30 MHz --- 270 mA 100 --- --- pF 16 dB 65 % VSWR IMD 30 POUT = 100 W (PEP) A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. ∞:1 --- -32 dBc REV. B 1/1