MRA0610-18A NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The MRA0610-18A is Designed for Class C, Common Base Wideband Large Signal Amplifier Applications From 600 MHz to 1.0 GHz, With Internal Compensating Matching Network and Diffused Ballast Resistors. PACKAGE STYLE MRA .25 MAXIMUM RATINGS 2.5 A (CONT) IC 50 V VCES O O O O TJ -65 C to +200 C TSTG -65 C to +150 C θJC 4.0 C/W MILLIMETERS MIN MAX 8.00 8.38 0.08 0.15 1.98 2.34 1.40 1.65 4.32 5.08 18.77 19.03 5.33 5.84 6.17 6.43 7.74 8.64 14.10 14.35 3.17 3.43 DIM A B C D E F G H J K L NONE O TC = 25 C SYMBOL MAX 0.330 0.006 0.092 0.065 0.200 0.749 0.230 0.253 0.240 0.565 0.135 1 = Collector 2 = Emitter 3 = Base O CHARACTERISTICS INCHES MIN O.351 0.003 0.078 0.055 0.170 0.739 0.210 0.243 0.210 0.555 0.125 TEST CONDITIONS MINIMUM TYPICAL MAXIMUM UNITS BVCES IC = 100 mA 50 V BVEBO IE = 1.25 mA 3.5 V ICBO VCB = 28 V hFE VCE = 5.0 V Cob VCB = 28 V GPB ηc VCE = 28 V IC = 500 mA 10 f = 1.0 MHz Pout = 18 W f = 600 MHz & 1.0 GHz 14 2.5 mA 100 --pF 7.8 dB 50 % A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE • NORTH HOLLYWOOD, CA 91605 • (818) 982-1200 • FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1