ASDL-5270 High-Performance Photodiode in T-1¾ Package Data Sheet Description Features ASDL-5270 is a Silicon PIN Photodiode encapsulated in dark T-1¾ package. The added feature of a dark tint acts as an optical filter to reduce effects of ambient light from interfering with the Infrared signal. It is ideal for applications from 700nm to 1100nm that require high sensitivity with low dark current and fast response time. • T-1¾ package • Fast Response Time • Low Dark Current • High Sensitivity • Low junction capacitance • Wide Viewing Angle • Lead Free & ROHS Compliant • Available in Tape & Reel Applications • Photo-Interrupters • High Speed IR data communication • Industrial Electronics & Equipment • Consumer Electronics (Optical Mouse, Remote Control, Printer etc) Ordering Information Part Number Lead Form Color Packaging Shipping Option ASDL-5270-D22 ASDL-5270-D31 Straight Dark Tape & Reel Bulk 4000 8000pcs / Carton Package Dimensions Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is + 0.25mm (.010”) unless otherwise noted 3. Protruded resin under flange is 1.5mm (.059”) max 4. Lead spacing is measured where leads emerge from package 5. Specifications are subject to change without notice. Absolute Maximum Ratings at TA=25°C Parameter Symbol Power Dissipation Reverse Voltage (Ir=100uA) Operating Temperature TO Storage Temperature TS Junction temperature TJ Max Unit PDISS 150 mW VR 30 V -40 85 °C -55 100 °C 110 °C Typ. Max. Unit Condition 1 1.3 V IF = 50mA V IR= 100uA Ee = 0mW/cm2 nA VR=10V Ee=0mW/cm2 25 pF Vr = 3V F = 1MHZ Ee = 0mW/cm2 350 mV l = 940nm Ee=0.5mW/cm2 °C/W Lead Soldering Temperature [ .6mm (0.063”) From Body ] Min. 260°C for 5 seconds Electrical Characteristics at 25°C Parameter Symbol Min. Forward Voltage VF Breakdown Voltage VBR Reverse Dark Current ID Diode Capacitance CO Open Circuit Voltage VOC Thermal Resistance, Junction to Pin RqJP - 375 Parameter Symbol Min. Typ. Photocurrent IPH 8 Radiant Sensitive Area 30 30 - Optical Characteristics at 25°C Unit Condition 13 uA Ee = 0.1mW/cm2 l = 940nm Vr = 5V A 1.55 mm2 Absolute Spectral Sensitivity S 0.6 A/W Viewing Angle 2q1/2 60 Deg Wavelength of Peak sensitivity 900 nm Spectral BandWidth λPK Δλ Rise Time tr 50 ns VR = 10V l = 850nm RL = 1K W Fall Time tf 50 ns VR = 10V l = 850nm RL = 1K W 700 900 Max. 1100 l = 940nm Vr = 5V nm Typical Electrical/Optical Characteristics Curves (TA=25˚C unless otherwise indicated) pA pF 4000 100 80 Capacitance Ct Dark Current ID 3000 2000 1000 0 60 40 20 5 0 10 15 0 20 V -2 10 -1 10 10 0 1 10 2 10 V Reverse Voltage VR Reverse Voltage VR Figure 1. DARK CURRENT VS. REVERSE VOLTAGE Figure 2. CAPACITANCE VS. REVERSE VOLTAGE 2 F=1MHZ; Ee=0mW/cm TA=25°C, Ee=0 mW/cm 2 nA 103 1.4 1.2 Dark Current ID o Is 25 Photocurrent Is amb 2 10 1.0 0.8 0.6 0.4 1 10 0 10 0.2 0 -1 -20 0 20 40 60 o 80 C Ambient Temperature Figure 3. PHOTOCURRENT VS. AMBIENT TEMPERATURE 10 0 20 40 60 80 o 100 C Ambient Temperature Figure 4. DARK CURRENT AMBIENT TEMPERATURE VR=10, Ee=0mW/cm 2 Typical Electrical/Optical Characteristics Curves (TA=25˚C unless otherwise indicated) Cont. % uA 10 3 10 2 10 1 10 0 10 -1 80 Photocurrent Ip Relative Spectral Sensitivity 100 60 40 20 0 700 800 900 1000 1100 -2 -1 10 10 Wavelength o mW 2 CM 1 10 Irradiance Ee Figure 5. RELATIVE SPECTRAL SENSITIVITY VS WAVELENGTH 0 0 10 10 o 20 Figure 6. PHOTOCURRENT VS IRRADIANCE λ = 940 nm o 30 o 40 o 0.9 0.8 50 o 0.7 60 o 80 o 1.0 0.6 100 0.5 0.3 0 0.2 Total Power Dissipation mW Relative Sensitivity 175 125 75 25 o 0.4 0 -40 -20 0 o 20 40 60 80 100 C Ambient Temperature Figure 7. SENSITIVITY DIAGRAM For product information and a complete list of distributors, please go to our web site: Figure 8. TOTAL POWER DISSIPATION VS AMBIENT TEMPERATURE www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2007 Avago Technologies Limited. All rights reserved. AV02-0010EN - January 18, 2007