ASDL-6620 Silicon NPN Phototransistor in T-1 Package Data Sheet Description Features ASDL-6620 is a silicon phototransistor in a standard T-1 package with options of clear and dark package. It has high sensitivity, fast response time and low dark current. Collector is denoted by a flat on the packaging diagram and the shorter of the two leads. This device matches with infrared emitter ASDL-4671 and is ideal for low cost, high volume applications. • T-1 package • Option of Dark Lens that remove visible light • Option of Clear Lens • High Speed • High Sensitivity • Narrow Viewing Angle Applications • Suitable for detectors of Infrared Applications • Smoke Detector • Alarm System • Photo Interrupter • Industrial Equipment Ordering Information Part Number Lead Form Color Packaging Shipping Option ASDL-6620-C22 ASDL-6620-C31 ASDL-6620-D22 ASDL-6620-D31 Straight Clear Tape & Reel Bulk Tape & Reel Bulk 4000pcs 8000pcs / Carton 4000pcs 8000pcs / Carton Dark Package Dimensions Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is + 0.25mm (.010”) unless otherwise noted 3. Protruded resin under flange is 1.5mm (.059”) max 4. Lead spacing is measured where leads emerge from package 5. Specifications are subject to change without notice. Absolute Maximum Ratings at TA=25°C Parameter Symbol Power Dissipation Max Unit PDISS 100 mW Collector Emitter Voltage VCEO 30 V Emitter Collector Voltage VECO 5 V Operating Temperature TO -40 85 °C Storage Temperature TS -55 100 °C Junction temperature TJ 110 °C Lead Soldering Temperature [ .6mm (0.063”) From Body ] Min. °C 260°C for 5 seconds Electrical Characteristics at 25°C Parameter Symbol Min. Collector-Emitter Breakdown Voltage V(BR)CEO Emitter-Collector Breakdown Voltage V(BR)ECO Collector Emitter Saturation Voltage VCE(SAT) Collector Dark Current ICEO Thermal Resistance, Junction to Pin RqJP Typ. Max. Unit Condition 30 V Ic= 1mA Ee = 0mW/cm2 5 V Ie = 100µA Ee = 0mW/cm2 0.4 V Ie = 0.5mA Ee = 1mW/cm2 100 nA VCE=10V Ee=0mW/cm2 °C/W 350 Optical Characteristics at 25°C Parameter Symbol Min. Typ. Max. Unit Viewing Angle 2θ1/2 20 Deg Wavelength of Peak sensitivity λPK 900 nm Spectral BandWidth Δλ Condition 400 900 1100 nm Clear 700 900 1100 nm Dark Rise Time tr 10 µs VCC = 5V Ic = 1mA RL = 1KΩ Fall Time tf 10 µs VCC = 5V Ic = 1mA RL = 1KΩ On State Collector Current IC(ON) mA VCE = 5V Ee = 1mW/cm2 λ = 940nm 1.6 9.6 Iceo-Collector Dark Current- A Collector Power Dissipation Pc(mW) Typical Electrical/Optical Characteristics Curves (TA=25˚C unless otherwise indicated) 100 10 1 0.1 0.01 0 0 40 80 120 120 100 80 60 40 20 0 -40 -20 Ta-Ambient Temperature- C Vcc=5V VRL=1V F =100Hz PW =1ms tf tr 0 2 6 4 8 Relative Sensitivity 10 o 20 3.0 2.0 1.0 0 1 2 3 o 1.0 40 o 0.9 50 o 0.8 60 o 0.7 70 o 80 o 90 o 0.5 0.3 0.1 0.2 0.4 0.6 FIGURE 5. SENSITIVITY DIAGRAM For product information and a complete list of distributors, please go to our web site: 2 FIGURE 4. RELATIVE COLLECTOR CURRENT VS IRRADIANCE o 30 5 4 Ee-Irradiance-mW/cm FIGURE 3. RISE AND FALL TIME VS LOAD RESISTANCE o Vce= 5V 4.0 0 10 RL-Load Resistance-K 0 20 40 60 80 100 FIGURE 2. COLLECTOR POWER DISSIPATION VS AMBIENT TEMPERATURE Relative Collector Current Tr Tf-Rise and Fall Time- s FIGURE 1. COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE 200 180 160 140 120 100 80 60 40 20 0 0 Ta-Ambient Temperature- o C o www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2007 Avago Technologies Limited. All rights reserved. AV02-0013EN - January 22, 2007