ASDL-5771 High Performance Photodiode in Side Look Package Data Sheet Description Features ASDL-5771 is a Silicon PIN Photodiode encapsulated in dark green Side Look package. The added feature of a dark tint acts as an optical filter to reduce effects of ambient light from interfering with the Infrared signal. It is ideal for applications from 700nm to 1100nm that require high sensitivity over wide viewing angle at smaller outline dimension. • Dark Green Side Look Package • High Sensitivity • Low Dark Current • Low Junction Capacitance • Wide Viewing Angle • Lead Free & ROHS Compliant • Available in Tape & Reel Applications • Detector in Consumer Electronics • Detector Industrial Electronics & Equipment Ordering Information Part Number Lead Form Color Packaging Shipping Option ASDL-5771-D22 ASDL-5771-D31 Straight Dark Green Tape & Reel Bulk 4000pcs 8000pcs / Carton Package Dimensions Notes: 1. All dimensions are in millimeters (inches) 2. Tolerance is + 0.25mm (.010”) unless otherwise noted 3. Lead spacing is measured where leads emerge from package 4. Specifications are subject to change without notice. Absolute Maximum Ratings at TA=25°C Parameter Symbol Power Dissipation Reverse Voltage (Ir=100uA) Operating Temperature TO Storage Temperature TS Junction temperature TJ Max Unit PDISS 150 mW VR 30 V -40 85 °C -55 100 °C 110 °C Lead Soldering Temperature [ .6mm (0.063”) From Body ] Min. 260°C for 5 seconds Electrical Characteristics at 25°C Parameter Symbol Forward Voltage VF Breakdown Voltage VBR Reverse Dark Current ID Diode Capacitance CO Open Circuit Voltage Thermal Resistance, Junction to Pin Min. Typ. Max. Unit Condition 1 1.3 V IF = 50mA V IR = 100uA Ee = 0mW/cm2 nA VR =10V Ee=0mW/cm2 25 pF VR = 3V F = 1MHZ Ee = 0mW/cm2 VOC 350 mV λ = 940nm Ee=0.5mW/cm2 RqJP 375 °C/W 30 30 Optical Characteristics at 25°C Parameter Symbol Min. Typ. Photocurrent IPH 1.7 Radiant Sensitive Area Unit Condition 2 uA Ee = 0.1mW/cm2 λ = 940nm Vr = 5V A 1.55 mm2 Absolute Spectral Sensitivity S 0.6 A/W Viewing Angle 2θ1/2 140 Deg Wavelength of Peak sensitivity λPK 900 nm Spectral BandWidth Δλ Rise Time tr 50 ns VR = 10V λ = 940nm RL = 1K Ω Fall Time tf 50 ns VR = 10V λ = 940nm RL = 1K Ω 700 900 Max. 1100 Ee= 1mW/cm2 λ = 940nm Vr = 5V nm Typical Electrical/Optical Characteristics Curves (TA=25˚C unless otherwise indicated) pA pF 4000 100 80 Capacitance Ct Dark Current ID 3000 2000 1000 0 60 40 20 5 0 10 15 0 20 V -2 10 Reverse Voltage VR -1 10 10 0 1 10 2 10 V Reverse Voltage VR Figure 1. Dark Current Versus Reverse Voltage Figure 2. Capacitance Versus Reverse Voltage nA 103 1.4 1.2 Dark Current ID o Is 25 Photocurrent Is amb 2 10 1.0 0.8 0.6 0.4 1 10 0 10 0.2 0 -1 -20 0 20 40 60 Ambient Temperature Figure 3. Photocurrent Versus Ambient Temperature o 80 C 10 0 20 40 60 80 Ambient Temperature Figure 4. Dark Current Versus Ambient Temperature o 100 C Typical Electrical/Optical Characteristics Curves (TA=25˚C unless otherwise indicated) Cont. % uA 10 3 10 2 10 1 10 0 10 -1 80 Photocurrent Ip Relative Spectral Sensitivity 100 60 40 20 0 700 800 900 1000 1100 -2 -1 10 10 Wavelength o mW CM 2 1 10 Irradiance Ee Figure 5. Relative Spectral Sensitivity Versus Wavelength 0 0 10 10 o 20 Figure 6. Photocurrent Versus Irradiance o 30 o 40 o 0.9 0.8 50 o 0.7 60 o 80 o 1.0 0.6 100 0.5 0.3 0 0.2 Total Power Dissipation mW Relative Sensitivity 175 125 75 25 o 0.4 0 -40 -20 0 o 20 40 60 80 100 C Ambient Temperature Figure 7. Sensitivity Diagram For product information and a complete list of distributors, please go to our web site: Figure 8. Total Power Dissipation Versus Ambient Temperature www.avagotech.com Avago, Avago Technologies, and the A logo are trademarks of Avago Technologies, Limited in the United States and other countries. Data subject to change. Copyright © 2007 Avago Technologies Limited. All rights reserved. AV02-0022EN - January 22, 2007