NS8AT THRU NS8MT GLASS PASSIVATED GENERAL PURPOSE PLASTIC RECTIFIER Reverse Voltage - 50 to 1000 Volts FEATURES TO-220AC 0.185 (4.70) 0.415 (10.54) MAX. 0.175 (4.44) 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) 0.055 (1.39) DIA. 0.148 (3.74) 0.045 (1.14) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 0.560 (14.22) 0.530 (13.46) 0.410 (10.41) 0.390 (9.91) 0.350 (8.89) 0.635 (16.13) 0.330 (8.38) 0.625 (15.87) ♦ Plastic package has Underwriters Laboratory Flammability Classification 94V-0 ♦ High forward current capability ♦ High surge current capability ♦ Low forward voltage drop ♦ Glass passivated chip junction ♦ High temperature soldering guaranteed: 260°C/10 seconds, 0.160" (4.06 mm) lead length 1.148 (29.16) PIN 1 Forward Current - 8.0 Amperes 2 1.118 (28.40) 0.110 (2.79) 0.100 (2.54) 0.160 (4.06) 0.140 (3.56) MECHANICAL DATA 0.560 (14.22) 0.530 (13.46) 0.105 (2.67) 0.095 (2.41) 0.037 (0.94) 0.027 (0.68) Case: JEDEC TO-220AB molded plastic body over passivated chip Terminals: Plated leads solderable per MIL-STD-750, Method 2026 Polarity: As marked Mounting Torque: 5 in. - lbs. max. Mounting Position: Any Weight: 0.064 ounce, 1.81 grams 0.022 (0.56) 0.014 (0.36) PIN 1 0.205 (5.20) 0.195 (4.95) PIN 2 CASE Dimensions in inches and (millimeters) MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Ratings at 25°C ambient temperature unless otherwise specified. SYMBOLS NS8 AT NS8 BT NS8 DT NS8 GT NS8 JT NS8 KT NS8 MT UNITS Maximum repetitive peak reverse voltage VRRM 50 100 200 400 600 800 1000 Volts Maximum RMS voltage VRMS 35 70 140 280 420 560 700 Volts Maximum DC blocking voltage VDC 50 100 200 400 600 800 1000 Volts Maximum average forward rectified current at TC=100°C I(AV) 8.0 Amps Peak forward surge current 8.3ms single half sine-wave superimposed on rated load (JEDEC Method) IFSM 125.0 Amps VF 1.1 Volts IR 10.0 100.0 µA Maximum instantaneous forward voltage at 8.0A Maximum DC reverse current at rated DC blocking voltage TC=25°C TC=100°C Typical junction capacitance (NOTE 1) Typical thermal resistance (NOTE 2) Operating junction and storage temperature range NOTES: (1) Measured at 1.0 MHz and applied reversed voltage of 4.0 Volts (2) Thermal resistance from junction to case mounted on heatsink 4/98 CJ 55.0 pF RΘJC 3.0 °C/W TJ, TSTG -55 to +150 °C RATINGS AND CHARACTERISTIC CURVES NS8AT THRU NS8MT FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD SURGE CURRENT 60 HZ RESISTIVE or INDUCTIVE LOAD 8.0 6.0 4.0 2.0 0 0 50 100 150 PEAK FORWARD SURGE CURRENT, AMPERES 175 10 TJ=TJ max. 8.3ms SINGLE HALF SINE-WAVE (JEDEC Method) 150 125 1.0 CYCLE 100 75 50 25 0 CASE TEMPERATURE, °C 1 10 100 NUMBER OF CYCLES AT 60 HZ FIG. 4 - TYPICAL REVERSE CHARACTERISTICS FIG. 3 - TYPICAL INSTANTANEOUS FORWARD CHARACTERISTICS 100 100 INSTANTANEOUS REVERSE CURRENT, MICROAMPERES TJ=25°C PULSE WIDTH=300µs 1% DUTY CYCLE 10 1 0.1 0.6 0.8 1.0 1.2 1.4 1.6 1.8 TJ=100°C 10 TJ=75°C 1 2.0 TJ=25°C INSTANTANEOUS FORWARD VOLTAGE, VOLTS 0.1 0 20 40 60 80 PERCENT OF RATED PEAK REVERSE VOLTAGE, % FIG. 5 - TYPICAL JUNCTION CAPACITANCE 120 JUNCTION CAPACITANCE, pF INSTANTANEOUS FORWARD CURRENT, AMPERES AVERAGE FORWARD CURRENT, AMPERES FIG.1 - FORWARD CURRENT DERATING CURVE TJ=25°C f=1.0 MHZ Vsig=50mp-p 100 80 60 40 20 0 0.1 1 10 REVERSE VOLTAGE, VOLTS 100 1,000 100