BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Collector Current.(IC= 100mA） z Excellent HFE Linearity. z Power dissipation.(PC=200mW) 2PD601AW Pb Lead-free APPLICATIONS z General purpose application. SOT-323 ORDERING INFORMATION Type No. 2PD601AW Marking Package Code 6D/6E/6F SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 60 V VCEO Collector-Emitter Voltage 50 V VEBO Emitter-Base Voltage 6 V IC Collector Current -Continuous 100 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ Document number: BL/SSSTF028 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor 2PD601AW ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 60 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 50 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 6 V Collector cut-off current ICBO VCB=60V,IE=0 0.01 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.01 μA DC current gain Collector-emitter saturation voltage Transition frequency Document number: BL/SSSTF028 Rev.A hFE VCE(sat) fT VCE=10V,IC=2mA 2PD601AQW 2PD601ARW 2PD601ASW 160 210 290 VCE=2V,IC=100mA 90 IC=100mA, IB= 10mA VCE=6V, IC= 2mA f=100MHz 2PD601AQW 2PD601ARW 2PD601ASW TYP MAX 260 340 460 0.5 100 120 140 UNIT V MHz www.galaxycn.com 2 BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor 2PD601AW PACKAGE OUTLINE Plastic surface mounted package SOT-323 SOT-323 Dim Min Max A 1.8 2.2 B 1.15 1.35 C 1.0Typical D 0.15 0.35 E 0.25 0.40 G 1.2 1.4 H 0.02 0.1 J K 0.1Typical 2.1 2.3 All Dimensions in mm PACKAGE INFORMATION Device Package Shipping 2PD601AW SOT-323 3000/Tape&Reel Document number: BL/SSSTF028 Rev.A www.galaxycn.com 3