BILIN KTC3880S

BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
FEATURES
z
Small reverse transfer capacitance.
z
Low noise figure.
KTC3880S
Pb
Lead-free
APPLICATIONS
z
High frequency Low noise amplifier application.
z
VHF band amplifier application.
SOT-23
ORDERING INFORMATION
Type No.
Marking
Package Code
KTC3879
RR/RO/RY
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
40
V
VCEO
Collector-Emitter Voltage
30
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current
20
mA
IE
Emitter Current
-20
mA
PC
Collector Power Dissipation
150
mW
Tj,Tstg
Junction and Storage Temperature
-55~150
℃
Document number: BL/SSSTC111
Rev.A
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
KTC3880S
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
40
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=100μA,IB=0
30
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
4
V
Collector cut-off current
ICBO
VCB=18V,IE=0
0.5
μA
Emitter cut-off current
IEBO
VEB=4V,IC=0
0.5
μA
DC current gain
hFE
VCE=6V,IC=2mA
40
Transition frequency
fT
VCE=6V, IC= 1mA
300
Noise figure
NF
VCC=6V,IE=1mA,
f=100KHz
CLASSIFICATION
OF
B
TYP
MAX
UNIT
240
550
MHz
2.5
5.0
dB
hFE
Rank
R
O
Y
Range
40-80
70-140
100-240
Marking
AQR
AQO
AQY
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
A
SOT-23
E
K
B
Dim
Min
Max
A
2.85
2.95
B
1.25
1.35
C
J
D
G
H
C
1.0Typical
D
0.37
0.43
E
0.35
0.48
G
1.85
1.95
H
0.02
0.1
J
K
0.1Typical
2.35
2.45
All Dimensions in mm
Document number: BL/SSSTC111
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
KTC3880S
SOLDERING FOOTPRINT
Unit : mm
PACKAGE
INFORMATION
Device
Package
Shipping
KTC3880S
SOT-23
3000/Tape&Reel
Document number: BL/SSSTC111
Rev.A
www.galaxycn.com
3