BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor FEATURES MMSTA92 Pb z Power dissipation.(PC=200mW) z Epitaxial planar die construction. z Complementary to MMSTA42. z Also available in lead free version. Lead-free APPLICATIONS z General purpose application and switching application. SOT-323 ORDERING INFORMATION Type No. Marking Package Code MMSTA92 K3R SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage -310 V VCEO Collector-Emitter Voltage -305 V VEBO Emitter-Base Voltage -5 V IC Collector Current -Continuous -300 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=-100μA,IE=0 -310 V Collector-emitter breakdown voltage V(BR)CEO IC=-1mA,IB=0 -305 V Emitter-base breakdown voltage V(BR)EBO IE=-100μA,IC=0 -5 V Collector cut-off current ICBO VCB=-200V,IE=0 -0.25 μA Emitter cut-off current IEBO VEB=-5V,IC=0 -0.1 μA DC current gain hFE VCE=-10V,IC=-1mA VCE=-10V,IC=-10mA VCE=-10V,IC=-80mA Document number: BL/SSSTF058 Rev.A 60 100 60 TYP MAX 200 www.galaxycn.com 1 UNIT BL Galaxy Electrical Production specification PNP Silicon Epitaxial Planar Transistor MMSTA92 Parameter Symbol Test conditions MIN TYP MAX Collector-emitter saturation voltage VCE(sat) IC=-20mA, IB=-2mA -0.2 V Base-emitter saturation voltage VBE(sat) IC=-20mA, IB=-2mA -0.9 V Transition frequency fT VCE=-20V,IC= -10mA, f=30MHz 50 MHz PACKAGE OUTLINE Plastic surface mounted package SOT-323 SOT-323 Dim Min Max A 1.8 2.2 B 1.15 1.35 C 1.0Typical D 0.15 0.35 E 0.25 0.40 G 1.2 1.4 H 0.02 0.1 J K 0.1Typical 2.1 2.3 All Dimensions in mm PACKAGE INFORMATION Device Package Shipping MMSTA92 SOT-323 3000/Tape&Reel Document number: BL/SSSTF058 Rev.A UNIT www.galaxycn.com 2