BILIN MMSTA92

BL Galaxy Electrical
Production specification
PNP Silicon Epitaxial Planar Transistor
FEATURES
MMSTA92
Pb
z
Power dissipation.(PC=200mW)
z
Epitaxial planar die construction.
z
Complementary to MMSTA42.
z
Also available in lead free version.
Lead-free
APPLICATIONS
z
General purpose application and switching application.
SOT-323
ORDERING INFORMATION
Type No.
Marking
Package Code
MMSTA92
K3R
SOT-323
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
-310
V
VCEO
Collector-Emitter Voltage
-305
V
VEBO
Emitter-Base Voltage
-5
V
IC
Collector Current -Continuous
-300
mA
PC
Collector Dissipation
200
mW
Tj,Tstg
Junction and Storage Temperature
-55~150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
IC=-100μA,IE=0
-310
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=-1mA,IB=0
-305
V
Emitter-base breakdown voltage
V(BR)EBO
IE=-100μA,IC=0
-5
V
Collector cut-off current
ICBO
VCB=-200V,IE=0
-0.25
μA
Emitter cut-off current
IEBO
VEB=-5V,IC=0
-0.1
μA
DC current gain
hFE
VCE=-10V,IC=-1mA
VCE=-10V,IC=-10mA
VCE=-10V,IC=-80mA
Document number: BL/SSSTF058
Rev.A
60
100
60
TYP MAX
200
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UNIT
BL Galaxy Electrical
Production specification
PNP Silicon Epitaxial Planar Transistor
MMSTA92
Parameter
Symbol
Test conditions
MIN
TYP MAX
Collector-emitter saturation voltage
VCE(sat)
IC=-20mA, IB=-2mA
-0.2
V
Base-emitter saturation voltage
VBE(sat)
IC=-20mA, IB=-2mA
-0.9
V
Transition frequency
fT
VCE=-20V,IC= -10mA,
f=30MHz
50
MHz
PACKAGE OUTLINE
Plastic surface mounted package
SOT-323
SOT-323
Dim
Min
Max
A
1.8
2.2
B
1.15
1.35
C
1.0Typical
D
0.15
0.35
E
0.25
0.40
G
1.2
1.4
H
0.02
0.1
J
K
0.1Typical
2.1
2.3
All Dimensions in mm
PACKAGE INFORMATION
Device
Package
Shipping
MMSTA92
SOT-323
3000/Tape&Reel
Document number: BL/SSSTF058
Rev.A
UNIT
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