BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Excellent HFE Linearity. z Complementary to KTA2015 z Power dissipation.(PC=100mW) KTC4076W Pb Lead-free APPLICATIONS z General purpose and switching application. SOT-323 ORDERING INFORMATION Type No. Marking KTC4076W WO/WY Package Code SOT-323 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 35 V VCEO Collector-Emitter Voltage 30 V VEBO Emitter-Base Voltage 5 V IC Collector Current -Continuous 500 mA PC Collector Dissipation 100 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ Document number: BL/SSSTF049 Rev.A www.galaxycn.com 1 BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor KTC4076W ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 35 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 30 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 5 V Collector cut-off current ICBO VCB=35V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain VCE=1V,IC=100mA 70 VCE=6V,IC=400mA 25 MAX UNIT 240 hFE Collector-emitter saturation voltage VCE(sat) IC=100mA, IB= 10mA Transition frequency fT VCE=6V, IC= 20mA Collector output capacitance Cob VCB=6V, IE=0mA f=1MHz CLASSIFICATION TYP OF 0.1 V MHz 7.0 pF hFE(1) Range O Y Marking 70-140 120-240 Document number: BL/SSSTF049 Rev.A 0.25 www.galaxycn.com 2 BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor KTC4076W PACKAGE OUTLINE Plastic surface mounted package SOT-323 SOT-323 Dim Min Max A 1.8 2.2 B 1.15 1.35 C 1.0Typical D 0.15 0.35 E 0.25 0.40 G 1.2 1.4 H 0.02 0.1 J K 0.1Typical 2.1 2.3 All Dimensions in mm PACKAGE INFORMATION Device Package Shipping KTC4076W SOT-323 3000/Tape&Reel Document number: BL/SSSTF049 Rev.A www.galaxycn.com 3