BILIN S9016

BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
FEATURES
z
Collector Current.(IC= 25mA)
z
Power dissipation.(PC=200mW)
S9016
Pb
Lead-free
APPLICATIONS
z
AM converter, FM/RM amplifier of low noise.
SOT-23
ORDERING INFORMATION
Type No.
Marking
Package Code
S9016
Y2
SOT-23
MAXIMUM RATING @ Ta=25℃ unless otherwise specified
Symbol
Parameter
Value
Units
VCBO
Collector-Base Voltage
30
V
VCEO
Collector-Emitter Voltage
20
V
VEBO
Emitter-Base Voltage
4
V
IC
Collector Current -Continuous
25
mA
PC
Collector Dissipation
200
mW
Tj,Tstg
Junction and Storage Temperature
-55~150
℃
ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Parameter
Symbol
Test conditions
MIN
Collector-base breakdown voltage
V(BR)CBO
IC=100μA,IE=0
30
V
Collector-emitter breakdown voltage
V(BR)CEO
IC=0.1mA,IB=0
20
V
Emitter-base breakdown voltage
V(BR)EBO
IE=100μA,IC=0
4
V
Collector cut-off current
ICBO
VCB=30V,IE=0
0.1
μA
Emitter cut-off current
IEBO
VEB=3V,IC=0
0.1
μA
DC current gain
hFE
VCE=5V,IC=1mA
Collector-emitter saturation voltage
VCE(sat)
IC=10mA, IB= 1mA
Transition frequency
fT
VCE=5V, IC= 1mA
Output capacitance
Cob
VCB=10V, IE=0,f=1MHz
Document number: BL/SSSTC127
Rev.A
B
28
MAX
198
0.3
B
UNIT
400
V
MHz
1.6
pF
www.galaxycn.com
1
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
S9016
TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified
Document number: BL/SSSTC127
Rev.A
www.galaxycn.com
2
BL Galaxy Electrical
Production specification
NPN Silicon Epitaxial Planar Transistor
S9016
PACKAGE OUTLINE
Plastic surface mounted package
SOT-23
SOT-23
A
E
K
B
Dim
Min
Max
A
2.85
2.95
B
1.25
1.35
C
J
D
G
H
C
1.0Typical
D
0.37
0.43
E
0.35
0.48
G
1.85
1.95
H
0.02
0.1
J
K
0.1Typical
2.35
2.45
All Dimensions in mm
SOLDERING FOOTPRINT
Unit : mm
PACKAGE
INFORMATION
Device
Package
Shipping
S9016
SOT-23
3000/Tape&Reel
Document number: BL/SSSTC127
Rev.A
www.galaxycn.com
3