BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor FEATURES z Collector Current.(IC= 25mA） z Power dissipation.(PC=200mW) S9016 Pb Lead-free APPLICATIONS z AM converter, FM/RM amplifier of low noise. SOT-23 ORDERING INFORMATION Type No. Marking Package Code S9016 Y2 SOT-23 MAXIMUM RATING @ Ta=25℃ unless otherwise specified Symbol Parameter Value Units VCBO Collector-Base Voltage 30 V VCEO Collector-Emitter Voltage 20 V VEBO Emitter-Base Voltage 4 V IC Collector Current -Continuous 25 mA PC Collector Dissipation 200 mW Tj,Tstg Junction and Storage Temperature -55~150 ℃ ELECTRICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 30 V Collector-emitter breakdown voltage V(BR)CEO IC=0.1mA,IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 4 V Collector cut-off current ICBO VCB=30V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=3V,IC=0 0.1 μA DC current gain hFE VCE=5V,IC=1mA Collector-emitter saturation voltage VCE(sat) IC=10mA, IB= 1mA Transition frequency fT VCE=5V, IC= 1mA Output capacitance Cob VCB=10V, IE=0,f=1MHz Document number: BL/SSSTC127 Rev.A B 28 MAX 198 0.3 B UNIT 400 V MHz 1.6 pF www.galaxycn.com 1 BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor S9016 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified Document number: BL/SSSTC127 Rev.A www.galaxycn.com 2 BL Galaxy Electrical Production specification NPN Silicon Epitaxial Planar Transistor S9016 PACKAGE OUTLINE Plastic surface mounted package SOT-23 SOT-23 A E K B Dim Min Max A 2.85 2.95 B 1.25 1.35 C J D G H C 1.0Typical D 0.37 0.43 E 0.35 0.48 G 1.85 1.95 H 0.02 0.1 J K 0.1Typical 2.35 2.45 All Dimensions in mm SOLDERING FOOTPRINT Unit : mm PACKAGE INFORMATION Device Package Shipping S9016 SOT-23 3000/Tape&Reel Document number: BL/SSSTC127 Rev.A www.galaxycn.com 3