BRIGHT LED ELECTRONICS CORP. BPT-NP23C2 SINCE 1981 SIDE- LOOK PACKAGE PHOTOTRANSISTOR ● Package Dimensions: ● Features 1. Wide range of collector current. 2. High sensitivity. 3. Low cost plastic package. 1.7(.067) 2.5(.098) 3.8(.150) 4.0(.157) 4. Lens Appearance: Water Clear. 4.6(.181) 5. This product doesn't contain restriction 1.5(.059) 1.6(.063) substance, comply ROHS standard 4.5(.177) 2.9(.114) 1.8(.071) 0.65(.026) 14.0(.551) MIN. 0.5(.020) ● Description The BPT-NP23C2 is a NPN silicon phototransistor 1 1.0(.039) MIN. 2 0.5(.019) mounted in a lensed ,water clear plastic package . 2.54(.100) The lensing effect of the package allows an 1. Emitter 2. Collector acceptance half view angle of 50∘that is measured from the optical axis to the half power point . NOTES: 1.All dimensions are in millimeters (inches). 2.Tolerance is ±0.25mm (0.01’’) unless otherwise specified. 3.Lead spacing is measured where the leads emerge from the package 4.Specifications are subject to change without notice ● Absolute Maximum Ratings(Ta=25℃) Parameter Maximum Rating Unit Power Dissipation 100 mW Collector- Emitter Voltage 30 V Emitter- Collector Voltage 5 V Operating Temperature -45℃~+85℃ Storage Temperature Range -45℃~+100℃ Lead Soldering Temperature 260℃ for 5 seconds Rev:2.2 Page1 of 3 BRIGHT LED ELECTRONICS CORP. BPT-NP23C2 SINCE 1981 ● Electrical Characteristics (TA=25℃ unless otherwise noted) PARAMETER Collector- Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector- Emitter Saturation Voltage SYMBOL MIN TYP MAX UNITS V(BR)CEO 30 - - V IC=1 mA V(BR)ECO 5 - - V IR=0.1mA Ee=0 mW/cm2 VCE(SAT) - - 0.5 V IC=0.1 mA Ee=1.0mW/cm2 Rise Time Tr - 25 - Fall Time Tf - 25 - Collector Dark Current Id - - IC (ON) - 13 Light Current TEST CONDITIONS Ee=0mW/cm2 μS VCE =5V RL=1KΩ F=100HZ 100 nA VCE=10V Ee=0 mW/cm2 - mA VCE=5V Ee=1.0mW/cm2 ● Typical Optical-Electrical Characteristic Curves FIG.1 Dark Current Vs. Ambient Temperature (uA) 1000 100 100 80 Power Dissipation Pd 10000 (mW) 120 Dark Current 10 1 0.1 0.01 0 20 60 80 100 40 Ambient Temperature 60 40 20 0 120 (°C) FIG.2 Power Dissipation Vs. Ambient Temperature -25 FIG.3 Rise And Fall Time Vs. Load Resistance (us) 20 Rise and Fall Time Relative Collector Current F=100Hz Tf Tr 8 4 0 0.2 125 (°C) 2.5 12 0 25 50 75 100 Ambient Temperature FIG.4 Relative Collector Current Vs. Irradiance Vcc=5V 16 0 0.4 0.6 0.8 1.0 (K ) Vce=5V 2.0 1.5 1.0 0.5 0 0 0.5 1.0 1.5 2.0 2.5 2 3.0 (mW/cm ) Irradiance Load Resistance Rev:2.2 Page2 of 3 BRIGHT LED ELECTRONICS CORP. SINCE 1981 BPT-NP23C2 ● Tapping and packaging specifications(Units: mm) ● Packaging Bag Dimensions Notes: 1、1000pcs per bag, 8Kpcs per box. 2、All dimensions are in millimeters(inches). 3、Specifications are subject to change without notice. Rev:2.2 Page3 of 3 BRIGHT LED ELECTRONICS CORP. BPT-NP23C2 SINCE 1981 Phototransistor Specification Commodity: Phototransistor Collector Current Bin Limits (At 1mW/ cm2) BIN CODE Min.(mA) Max.(mA) P8 0.799 0.985 P9 0.985 1.050 P10 1.050 1.250 P11 1.250 1.400 P12 1.400 1.550 P13 1.550 1.700