SIDE LOOK PACKAGE NPN PHOTOTRANSISTOR MID-95A3LH Description Package Dimensions Unit: mm ( inches 1.50 (.059) The MID-95A3LH is a TWIN NPN silicon phototransistor mounted in a special dark plastic side looking package and suitable for the IRED (940nm) Type. 4.90 (.193) 3.05 (.112) 2.49 (.098) RADIANT SENSITIVE AREA A 5.00 (.200) 6.80 (.270) B 4.50 (.180) 1.00 (.040) 13.00MIN (.511) .50 TYP. (.020) Features l l Wide range of collector current 1 1.00MIN. (.040) Low cost plastic package 0.61 ± .01 (.020) 3 2 2.54 (.100) 1 3.00MIN . 1.27 ± .01 (.050) 0.61 (.020) 2.54 (.100) 2 3 1 EMITTER (PTR A) 2 COLLECTOR(COM) 3 EMITTER (PTR B) NOTES : 1. All dimensions are in millimeters.(inches). 2. Tolerance is ± 0.25mm (.010") unless otherwise noted . 3. Protruded resin under flange is 1.5mm (.059") max. 4. Specifications are subject to change without notice. Absolute Maximum Ratings @ TA=25oC Parameter Maximum Rating Unit Power Dissipation 100 mW Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V Operating Temperature Range -55oC to +100oC Storage Temperature Range -55oC to +100oC Lead Soldering Temperature 260oC for 5 seconds Unity Opto Technology Co., Ltd. 02/04/2002 MID-95A3LH Optical-Electrical Characteristics @ TA=25oC Parameter Test Conditions Symbol Min. Typ . V(BR)CEO 30 V V(BR)ECO 5 V VCE(SAT) 0.1 Collector-Emitter Ic=1mA Breakdown Voltage Ee=0 Emitter-Collector Ie=100µA Breakdown Voltage Ee=0 Collector-Emitter Ic=0.1 mA Saturation Voltage Ee=0.1mW/cm2 Rise Time VR =5V, RL=1KΩ Tr 10 Fall Time IC=1mA Tf 10 Collector Dark VCE=10V Current Ee=0 On State Collector VCE=5V Current Ee=0.1mW/cm2 Max. Unit 0.4 V µS ICEO 100 IC(ON) 0.16 nA 0.4 mA 1000 4.0 Ic Normalized Collector Current Iceo-Collector Dark Current -µA Typical Optical-Electrical Characteristic Curves 100 10 1 0.1 0.01 0.001 40 80 120 2.5 2.0 1.5 1.0 0.5 20 Vcc = 5 V VRL= 1 V F = 100 Hz PW = 1 ms 12 8 4 0 0 2 -75 4 6 8 10 RL - Load Resistance - KΩ FIG.3 RISE AND FALL TIME VS LOAD RESISTANCE -25 25 75 125 TA - Ambient Temperature -oC FIG.2 NORMALIZED COLLECTOR CURRENT VS AMBIENT TEMPERATURE Relative Collector Current (mA) TA - Ambient Temperature -oC FIG.1 COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE Tr Tf - Rise and Fall Time - mS V 0.0 0 16 Vce = 5 3.5 Ee = 0.1 mW/cm2 3.0 @λ= 940 nm 2.0 Vce = 5 V 1.6 1.2 0.8 0.4 0.0 0 0.1 0.2 0.3 0.4 0.5 0.6 2 Ee - Irradiance - mW/cm FIG.4 RELATIVE COLLECTOR CURRENT VS IRRADIANCE Unity Opto Technology Co., Ltd. 02/04/2002