1.8mm PACKAGE NPN PHOTOTRANSISTOR Description MID-18A22 Package Dimensions The MID-18A22 is a NPN silicon phototransistor mounted in a lensed , special dark plastic package.The lensing effect of the package allows an acceptance view Unit : mm (inches ) φ1.80 (.071) R 1.70 (.067) 2.40 (.094) angle of 35o that is measured from the optical axis to the 3.30 (.130) half power point . 1.40 (.055) 3.00 (.118) 1.60 (.063) SEE NOTE 2 25.40MIN. (1.000) Features 0.50 TYP. (.020) l Wide range of collector current l Lensed for high sensitivity l Low cost plastic package l Good spectral matching IRED (λp=940nm) type. 1.00MIN. (.040) 2.54 NOM. (.100) E SEE NOTE 3 C Notes : 1. Tolerance is ± 0.25mm (.010") unless otherwise noted . 2. Protruded resin under flange is 0.8 mm (.031") max 3. Lead spacing is measured where the leads emerge from the package. Absolute Maximum Ratings o @ TA=25 C Parameter Maximum Rating Unit Power Dissipation 100 mW Collector-Emitter Voltage 30 V Emitter-Collector Voltage 5 V o o o o Operating Temperature Range -55 C to +100 C Storage Temperature Range -55 C to +100 C Lead Soldering Temperature 260oC for 5 seconds Unity Opto Technology Co., Ltd. 02/04/2002 MID-18A22 . Optical-Electrical Characteristics o Symbol V(BR)CEO Min. 30 V(BR)ECO 5 10 1 0.1 0.01 0.001 0 40 80 120 TA- Ambient Temperature -oC FIG.1 COLLECTOR DARK CURRENT VS AMBIENT TEMPERATURE 200 Vcc = 5 V VRL= 1 V F = 100 Hz PW = 1 ms 160 120 80 40 0 0 2 4 6 8 10 RL - Load Resistance - KΩ FIG.3 RISE AND FALL TIME VS LOAD RESISTANCE 0.4 V µS 15 15 ICEO 100 IC(ON) nA 2.2 4.0 3.5 3.0 2.5 2.0 1.5 1.0 0.5 0.0 mA Vce = 5 V Ee = 0.1 mW/cm2 λ -75 -25 25 75 125 TA- Ambient Temperature -oC FIG.2 NORMALIZED COLLECTOR CURRENT VS AMBIENT TEMPERATURE 10 Vce = 5 V 8 6 4 2 0 0 0.1 0.2 0.3 0.4 0.5 0.6 2 Ee - Irradiance - mW/cm FIG.4 RELATIVE COLLECTOR CURRENT VS IRRADIANCE 0° 10° 20° 100 Relative Sensitivity Iceo-Collector Dark Current -µA Tr Tf Rise and Fall Time - µS Relative Spectral Sensitivity 100 V Tr Tf Typical Optical-Electrical Characteristic Curves 1000 Typ . VCE(SAT) IC Normalized Collector Current Test Conditions Ic=0.1mA Ee=0 Ie=0.1mA Ee=0 Ic=0.5mA Ee=0.1mW/cm2 VCC =5V, RL=1KΩ IC=1mA VCE=10V Ee=0 VCE=5V Ee=0.1mW/cm2 Relative Collector Current (mA) Parameter Collector-Emitter Breakdown Voltage Emitter-Collector Breakdown Voltage Collector-Emitter Saturation Voltage Rise Time Fall Time Collector Dark Current On State Collector Current @ TA=25 C Max. Unit V 80 60 40 20 0 700 800 900 1000 1100 1200 Wavelength-nm FIG.5 RELATIVE SPECTRAL SENSITIVITY VS. WAVELENGTH 30° 40° 1.0 0.9 50° 60° 70° 80° 90° 0.8 0.5 0.3 0.1 0.2 0.4 0.6 FIG.6 SENSITIVITY DIAGRAM Unity Opto Technology Co., Ltd. 02/04/2002