Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package CMBTA92 CMBTA93 SILICON EPITAXIAL TRANSISTORS P–N–P transistor Marking CMBTA92 = 2D CMBTA93 = 2E PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 °C D.C. current gain –IC = 10 mA; –VCE = 10 V Transition frequency at f = 100 MHz –IC = 10 mA; –VCE = 20 V Collector–base capacitance at f = 1 MHz IE = 0; –VCB = 20 V Continental Device India Limited Data Sheet –V CBO –V CEO –V EBO –IC Ptot CMBT A92 max. 300 max. 300 max. max. 5 500 250 hFE min. 40 fT min. 50 C cb max. 6 A93 200 V 200 V V mA mW MHz 8 pF Page 1 of 3 CMBTA92 CMBTA93 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation up to Tamb = 25 °C Storage temperature Junction temperature –V CBO –V CEO –VEBO –IC Ptot Tstg Tj THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth t–s + Rth s–a) + Tamb Thermal resistance from junction to ambient Rth j–a CMBT A92 max. 300 max. 300 max. max. max –55 max. CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector–emitter breakdown voltage –V(BR)CEO min. –IC = 1 mA; IB = 0 Collector–base breakdown voltage –V(BR)CBO min. –IC = 100 µA; IE = 0 Collector cut–off current –I CBO max. –VCB = 200 V; IE = 0 –I CBO max. –VCB = 160 V; IE = 0 Emitter–base breakdown voltage –V(BR)EBO min. –IE = 100 µA; IC = 0 Emitter cut–off current –I EBO max. IC = 0; –VBE = 3 V; Collector–base capacitance at f= 1 MHz Ccb max. IE = 0; –VCB = 20 V Saturation voltages –VCEsat max. –IC = 20 mA; –IB = 2 mA –VBEsat max. –IC = 20 mA; –IB = 2 mA D.C. current gain hFE min. –IC = 1 mA; –VCE = 10 V hFE min. –IC = 10 mA; –VCE = 10 V hFE min. –IC = 30 mA; –VCE = 10 V Continental Device India Limited Data Sheet A93 200 V 200 V 5 V 500 mA 250 mW to +150 °C 150 °C 500 K/W 300 200 V 300 200 V 0.25 – – µA 0.25 µA 5 0.1 V 0.1 mA 6 8 0.5 0.9 pF 0.5 V 0.9 V 25 40 25 Page 2 of 3 Customer Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-2579 6150, 5141 1112 Fax +q 91-11-2579 5290, 5141 1119 [email protected] www.cdilsemi.com Continental Device India Limited Data Sheet Page 3 of 3