IS/ISO 9002 Lic# QSC/L- 000019.2 Continental Device India Limited IS / IECQC 700000 IS / IECQC 750100 An IS/ISO 9002 and IECQ Certified Manufacturer SOT-23 Formed SMD Package CMBT5400 HIGH VOLTAGE TRANSISTOR P–N–P transistor Marking CMBT5400 = K2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2 ABSOLUTE MAXIMUM RATINGS Collector–base voltage (open emitter) Collector–emitter voltage (open base) Emitter–base voltage (open collector) Collector current (d.c.) Total power dissipation at Tamb = 25°C D.C. current gain –IC = 10 mA; –VCE = 5 V –V CBO –V CEO –V EBO –IC Ptot max. max. max. max. max 130 120 5 500 250 hFE min. max. 40 180 max. max. max. max. 130 120 5 500 RATINGS (at TA = 25°C unless otherwise specified) Limiting values Collector–base voltage (open emitter) –V CBO Collector–emitter voltage (open base) –V CEO Emitter–base voltage (open collector) –V EBO Collector current (d.c.) –IC Continental Device India Limited Data Sheet V V V mA mW V V V mA Page 1 of 3 CMBT5400 Total power dissipation at Tamb = 25°C Storage temperature Junction temperature Ptot Tstg Tj THERMAL CHARACTERISTICS Tj = P (Rth j–t + Rth s–a) + Tamb Thermal resistance from junction to ambient Rth j–a max 250 –55 to +150 max. 150 CHARACTERISTICS (at TA = 25°C unless otherwise specified) Collector–emitter breakdown voltage –V(BR)CEO min. –IC = 1 mA; IB = 0 Collector–base breakdown voltage –V(BR)CBO min. –IC = 100 mA; IE = 0 Emitter–base breakdown voltage –V(BR)EBO min. –IE = 10 mA; IC = 0 Collector cut–off current –I CBO max. –VCB = 100 V; IE = 0 V Emitter cut-off current –I EBO max. –VEB = 3V; IC = 0 Output capacitance at f = 1 MHz Cc max. IE = 0; –VCB = 10 V Saturation voltages –IC = 10 mA; –IB = 1 mA mW °C °C 200 °C/mW 120 V 130 V 5 V 100 nA 50 nA 6 pF –VCEsat –VBEsat max. max. 0.2 1 V V –VCEsat –VBEsat max. max. 0.5 1 V V hFE min. 50 –IC = 10 mA; –VCE = 5 V hFE min. max. 40 180 –IC = 50 mA; –VCE = 5 V Noise figure at RS = 1 kW –IC = 200 mA; –VCE = 5 V f = 10 Hz to 15.7 kHz hFE min. 40 NF max. 8 –IC = 50 mA; –IB = 5 mA –IC = 50 mA; –IB = 5 mA D.C. current gain –IC = 1 mA; –VCE = 5 V Continental Device India Limited Data Sheet dB Page 2 of 3 Notes Disclaimer The product information and the selection guides facilitate selection of the CDIL's Discrete Semiconductor Device(s) best suited for application in your product(s) as per your requirement. It is recommended that you completely review our Data Sheet(s) so as to confirm that the Device(s) meet functionality parameters for your application. The information furnished on the CDIL Web Site/ CD is believed to be accurate and reliable. CDIL however, does not assume responsibility for inaccuracies or incomplete information. Furthermore, CDIL does not assume liability whatsoever, arising out of the application or use of any CDIL product; neither does it convey any license under its patent rights nor rights of others. These products are not designed for use in life saving/support appliances or systems. CDIL customers selling these products (either as individual Discrete Semiconductor Devices or incorporated in their end products), in any life saving/support appliances or systems or applications do so at their own risk and CDIL will not be responsible for any damages resulting from such sale(s). CDIL strives for continuous improvement and reserves the right to change the specifications of its products without prior notice. CDIL is a registered Trademark of Continental Device India Limited C-120 Naraina Industrial Area, New Delhi 110 028, India. Telephone + 91-11-579 6150 Fax + 91-11-579 9569, 579 5290 e-mail [email protected] www.cdil.com Continental Device India Limited Data Sheet Page 3 of 3