HETERO JUNCTION FIELD EFFECT TRANSISTOR NE3509M04 L TO S BAND LOW NOISE AMPLIFIER N-CHANNEL HJ-FET FEATURES • Super low noise figure and high associated gain NF = 0.4 dB TYP., Ga = 17.5 dB TYP. @ f = 2 GHz, VDS = 2 V, ID = 10 mA • Flat-lead 4-pin thin-type super minimold (M04) package APPLICATIONS • Satellite radio (SDARS, DMB, etc.) antenna LNA • GPS antenna LNA • Low noise amplifier for microwave communication system ORDERING INFORMATION Part Number NE3509M04 Order Number NE3509M04-A NE3509M04-T2 NE3509M04-T2-A Package Quantity Marking Flat-lead 4-pin thin- 50 pcs (Non reel) V80 type super minimold • 8 mm wide embossed taping • Pin 1 (Source), Pin 2 (Drain) face 3 kpcs/reel (M04) (Pb-Free) Supplying Form the perforation side of the tape Remark To order evaluation samples, contact your nearby sales office. Part number for sample order: NE3509M04 ABSOLUTE MAXIMUM RATINGS (TA = +25°C) Parameter Symbol Ratings Unit Drain to Source Voltage VDS 4.0 V Gate to Source Voltage VGS −3.0 V Drain Current ID IDSS mA Gate Current IG 200 µA 150 mW Total Power Dissipation Ptot Note Channel Temperature Tch +150 °C Storage Temperature Tstg −65 to +150 °C Note Mounted on 1.08 cm2 × 1.0 mm (t) glass epoxy PCB Caution Observe precautions when handling because these devices are sensitive to electrostatic discharge. Document No. PG10608EJ01V0DS (1st edition) Date Published April 2006 NS CP(K) NE3509M04 RECOMMENDED OPERATING CONDITIONS (TA = +25°C) Parameter Symbol MIN. TYP. MAX. Unit VDS − 2 3 V Drain Current ID − 10 20 mA Input Power Pin − − 0 dBm Drain to Source Voltage ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) Parameter Symbol Test Conditions MIN. TYP. MAX. Unit Gate to Source Leak Current IGSO VGS = −3 V − 0.5 10 µA Saturated Drain Current IDSS VDS = 2 V, VGS = 0 V 30 45 60 mA VGS (off) VDS = 2 V, ID = 50 µA −0.25 −0.5 −0.75 V Transconductance gm VDS = 2 V, ID = 10 mA 80 − − mS Noise Figure NF VDS = 2 V, ID = 10 mA, f = 2 GHz − 0.4 0.7 dB Associated Gain Ga 16 17.5 − dB − 11 − dBm Gate to Source Cutoff Voltage Gain 1 dB Compression Output Power 2 PO (1 dB) VDS = 2 V, ID = 10 mA (Non-RF), f = 2 GHz Data Sheet PG10608EJ01V0DS NE3509M04 TYPICAL CHARACTERISTICS (TA = +25°C, unless otherwise specified) DRAIN CURRENT vs. GATE TO SOURCE VOLTAGE TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE 50 Mounted on Glass Epoxy PCB (1.08 cm2 × 1.0 mm (t) ) Drain Current ID (mA) 200 150 100 35 30 25 20 15 5 50 100 150 200 0 –1.0 250 –0.8 –0.6 –0.4 –0.2 0 Ambient Temperature TA (˚C) Gate to Source Voltage VGS (V) MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. FREQUENCY DRAIN CURRENT vs. DRAIN TO SOURCE VOLTAGE 1.6 Ga 1.4 14 1.2 12 1.0 10 0.8 8 0.6 6 NFmin 0.4 4 0.2 2 5 10 80 60 VGS = 0 V 40 –0.1 V –0.2 V 20 –0.3 V –0.4 V –0.5 V 0 15 0.0 0 100 Drain Current ID (mA) 1.8 Associated Gain Ga (dB) 20 VDS = 2 V 18 ID = 10 mA 16 2.0 1 0 2 3 4 5 Frequency f (GHz) Drain to Source Voltage VDS (V) MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN TO SOURCE VOLTAGE 1.4 14 1.2 12 1.0 10 0.8 8 0.6 6 1.8 Ga 0.4 4 NFmin 0.2 2 0.0 0 40 0 10 20 30 2.0 1.8 20 f = 2.0 GHz, ID = 10 mA 18 Ga 1.6 16 1.4 14 1.2 12 1.0 10 0.8 8 0.6 6 0.4 4 NFmin 0.2 0.0 1.0 Drain Current ID (mA) Associated Gain Ga (dB) 1.6 20 f = 2.0 GHz 18 VDS = 2 V 16 2.0 Minimum Noise Figure NFmin (dB) Minimum Noise Figure NFmin (dB) 40 10 50 0 Minimum Noise Figure NFmin (dB) VDS = 2 V 45 Associated Gain Ga (dB) Total Power Dissipation Ptot (mW) 250 2 1.5 2.0 2.5 3.0 0 3.5 Drain to Source Voltage VDS (V) Remark The graphs indicate nominal characteristics. Data Sheet PG10608EJ01V0DS 3 NE3509M04 MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN TO SOURCE VOLTAGE 20 f = 2.5 GHz, VDS = 2 V Ga 1.6 16 1.4 14 1.2 12 1.0 10 0.8 8 0.6 6 0.4 4 NFmin 0.2 2 0.0 0 40 0 10 20 30 20 2.0 18 Minimum Noise Figure NFmin (dB) 1.8 Associated Gain Ga (dB) Minimum Noise Figure NFmin (dB) 2.0 1.8 f = 2.5 GHz, ID = 10 mA 1.6 18 16 Ga 1.4 14 1.2 12 1.0 10 0.8 8 6 0.6 NFmin 0.4 4 2 0.2 0.0 1.0 1.5 Drain Current ID (mA) 2.0 2.5 3.0 Drain to Source Voltage VDS (V) OUTPUT POWER, IM3, DRAIN CURRENT vs. INPUT POWER 50 30 45 OIP3 = +25 dBm 20 40 Pout (2 tone) 10 30 –10 IM3 (L) –20 25 IM3 (H) –30 20 –40 15 –50 10 –60 ID –70 –80 –25 –20 –15 –10 5 f = 2.5 GHz, VDS = 2 V ID = 10 mA (Non-RF) –5 0 Input Power Pin (2 tone) (dBm) Remark The graphs indicate nominal characteristics. 4 35 IIP3 = +7.5 dBm 0 Data Sheet PG10608EJ01V0DS 5 10 15 0 Drain Current ID (mA) Output power Pout (2 tone) (dBm) 3rd Order Intermodulation Distortion IM3 (dBm) 40 0 3.5 Associated Gain Ga (dB) MINIMUM NOISE FIGURE, ASSOCIATED GAIN vs. DRAIN CURRENT NE3509M04 S-PARAMETERS S-parameters/Noise parameters are provided on our web site in a form (S2P) that enables direct import to a microwave circuit simulator without keyboard input. Click here to download S-parameters. [RF and Microwave] → [Device Parameters] URL http://www.ncsd.necel.com/ Data Sheet PG10608EJ01V0DS 5 NE3509M04 PACKAGE DIMENSIONS FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) (UNIT: mm) PIN CONNECTIONS 1. 2. 3. 4. 6 Source Drain Source Gate Data Sheet PG10608EJ01V0DS 2.0±0.1 2 1 1.25 3 4 1.30 0.65 1.30 3 4 0.30+0.1 –0.05 0.11+0.1 –0.05 1 0.30+0.1 –0.05 0.59±0.05 (1.05) 0.65 0.60 0.65 1.25 2 1.25±0.1 V80 2.0±0.1 (Bottom View) 0.30+0.1 –0.05 0.40+0.1 –0.05 2.05±0.1 NE3509M04 MOUNTING PAD DIMENSIONS (REFERENCE ONLY) FLAT-LEAD 4-PIN THIN-TYPE SUPER MINIMOLD (M04) PACKAGE (UNIT: mm) 3 4 0.5 1 1.3 1.25 0.6 2 1.6 0.6 Data Sheet PG10608EJ01V0DS 7 NE3509M04 RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact your nearby sales office. Soldering Method Infrared Reflow Partial Heating Soldering Conditions Condition Symbol Peak temperature (package surface temperature) : 260°C or below Time at peak temperature : 10 seconds or less Time at temperature of 220°C or higher : 60 seconds or less Preheating time at 120 to 180°C : 120±30 seconds Maximum number of reflow processes : 3 times Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Peak temperature (terminal temperature) : 350°C or below Soldering time (per side of device) : 3 seconds or less Maximum chlorine content of rosin flux (% mass) : 0.2%(Wt.) or below Caution Do not use different soldering methods together (except for partial heating). 8 Data Sheet PG10608EJ01V0DS IR260 HS350 4590 Patrick Henry Drive Santa Clara, CA 95054-1817 Telephone: (408) 919-2500 Facsimile: (408) 988-0279 Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) and the requirements of EU Directive 2003/11/EC Restriction on Penta and Octa BDE. CEL Pb-free products have the same base part number with a suffix added. The suffix –A indicates that the device is Pb-free. The –AZ suffix is used to designate devices containing Pb which are exempted from the requirement of RoHS directive (*). In all cases the devices have Pb-free terminals. All devices with these suffixes meet the requirements of the RoHS directive. This status is based on CEL’s understanding of the EU Directives and knowledge of the materials that go into its products as of the date of disclosure of this information. Restricted Substance per RoHS Concentration Limit per RoHS (values are not yet fixed) Concentration contained in CEL devices -A Not Detected Lead (Pb) < 1000 PPM Mercury < 1000 PPM Not Detected Cadmium < 100 PPM Not Detected Hexavalent Chromium < 1000 PPM Not Detected PBB < 1000 PPM Not Detected PBDE < 1000 PPM Not Detected -AZ (*) If you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. Important Information and Disclaimer: Information provided by CEL on its website or in other communications concerting the substance content of its products represents knowledge and belief as of the date that it is provided. CEL bases its knowledge and belief on information provided by third parties and makes no representation or warranty as to the accuracy of such information. Efforts are underway to better integrate information from third parties. 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